Reto Rhyner

427 total citations
18 papers, 320 citations indexed

About

Reto Rhyner is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Materials Chemistry. According to data from OpenAlex, Reto Rhyner has authored 18 papers receiving a total of 320 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 12 papers in Biomedical Engineering and 8 papers in Materials Chemistry. Recurrent topics in Reto Rhyner's work include Advancements in Semiconductor Devices and Circuit Design (16 papers), Nanowire Synthesis and Applications (12 papers) and Semiconductor materials and devices (9 papers). Reto Rhyner is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (16 papers), Nanowire Synthesis and Applications (12 papers) and Semiconductor materials and devices (9 papers). Reto Rhyner collaborates with scholars based in Switzerland, United States and South Korea. Reto Rhyner's co-authors include Mathieu Luisier, Áron Szabó, Hamilton Carrillo-Nuñez, Andreas Schenk, Cedric Bessire, Heinz Schmid, H. Ghoneim, Siegfried Karg, Kirsten E. Moselund and Heike Riel and has published in prestigious journals such as Nano Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Reto Rhyner

18 papers receiving 314 citations

Peers

Reto Rhyner

EEE

AMPO

CSE

Abhijeet Paul United States

G. Willeke Germany

Benoît Behaghel France

Isaac R. Storch United States

C. Chassat France

Pascal Faucherand France

K. Romanjek France

Q. Wang United States

Pratyush Das Kanungo Switzerland

Henrik H. Henrichsen Denmark

Abhijeet Paul United States

Reto Rhyner

269 ×1.1

EEE

147 ×0.8

170 ×1.7

118 ×2.2

AMPO

15 ×1.0

CSE

Citations per year, relative to Reto Rhyner Reto Rhyner (= 1×) peers Abhijeet Paul

Countries citing papers authored by Reto Rhyner

Since Specialization

Citations

This map shows the geographic impact of Reto Rhyner's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Reto Rhyner with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Reto Rhyner more than expected).

Fields of papers citing papers by Reto Rhyner

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Reto Rhyner. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Reto Rhyner. The network helps show where Reto Rhyner may publish in the future.

Co-authorship network of co-authors of Reto Rhyner

This figure shows the co-authorship network connecting the top 25 collaborators of Reto Rhyner. A scholar is included among the top collaborators of Reto Rhyner based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Reto Rhyner. Reto Rhyner is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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18 of 18 papers shown

Lee, Jaehyun, Reto Rhyner, Salvatore Amoroso, et al.. (2024). Design Technology Co-Optimization for the DRAM Cell Structure With Contact Resistance Variation. IEEE Transactions on Electron Devices. 71(3). 1893–1899. 7 indexed citations

Rhyner, Reto, et al.. (2022). Non-parabolic effective mass model for dissipative quantum transport simulations of III–V nano-devices. Journal of Applied Physics. 132(9). 1 indexed citations

Silvestri, Luca, Mattias Palsgaard, Reto Rhyner, et al.. (2022). Hierarchical modeling for TCAD simulation of short-channel 2D material-based FETs. Solid-State Electronics. 200. 108533–108533. 8 indexed citations

Rhyner, Reto & Mathieu Luisier. (2017). Influence of thermal losses at the gate contact of Si nanowire transistors: A phenomenological treatment in quantum transport theory. Applied Physics Letters. 110(10). 8 indexed citations

Carrillo-Nuñez, Hamilton, Reto Rhyner, Mathieu Luisier, & Andreas Schenk. (2016). Effect of surface roughness and phonon scattering on extremely narrow InAs-Si Nanowire TFETs. 188–191. 7 indexed citations

Rhyner, Reto & Mathieu Luisier. (2016). Minimizing Self-Heating and Heat Dissipation in Ultrascaled Nanowire Transistors. Nano Letters. 16(2). 1022–1026. 42 indexed citations

Luisier, Mathieu, Reto Rhyner, Áron Szabó, & Andreas Pedersen. (2016). Atomistic simulation of nanodevices. 56. 281–286. 3 indexed citations

Szabó, Áron, Reto Rhyner, & Mathieu Luisier. (2015). Ab initiosimulation of single- and few-layerMoS2transistors: Effect of electron-phonon scattering. Physical Review B. 92(3). 86 indexed citations

Szabó, Áron, Reto Rhyner, Hamilton Carrillo-Nuñez, & Mathieu Luisier. (2015). Phonon-limited performance of single-layer, single-gate black phosphorus n- and p-type field-effect transistors. 12.1.1–12.1.4. 24 indexed citations

10.

Rhyner, Reto & Mathieu Luisier. (2014). Influence of anharmonic phonon decay on self-heating in Si nanowire transistors. Applied Physics Letters. 105(6). 9 indexed citations

11.

Rhyner, Reto & Mathieu Luisier. (2014). Atomistic modeling of coupled electron-phonon transport in nanowire transistors. Physical Review B. 89(23). 36 indexed citations

12.

Szabó, Áron, Reto Rhyner, & Mathieu Luisier. (2014). Ab-initio simulations of MoS<inf>2</inf> transistors: From mobility calculation to device performance evaluation. 30.4.1–30.4.4. 11 indexed citations

13.

Luisier, Mathieu & Reto Rhyner. (2013). Atomistic simulation of electron and phonon transport in nano-devices. 55. 308–313. 2 indexed citations

14.

Rhyner, Reto & Mathieu Luisier. (2013). Phonon-limited low-field mobility in silicon: Quantum transport vs. linearized Boltzmann Transport Equation. Journal of Applied Physics. 114(22). 20 indexed citations

15.

Rhyner, Reto & Mathieu Luisier. (2013). Self-heating effects in ultra-scaled Si nanowire transistors. 32.1.1–32.1.4. 15 indexed citations

16.

Ghoneim, H., Philipp Mensch, Heinz Schmid, et al.. (2012). In situdoping of catalyst-free InAs nanowires. Nanotechnology. 23(50). 505708–505708. 25 indexed citations

17.

Schenk, Andreas, Reto Rhyner, Mathieu Luisier, & Cedric Bessire. (2012). Simulation study of nanowire tunnel FETs. 201–202. 4 indexed citations

18.

Schenk, Andreas, Reto Rhyner, Mathieu Luisier, & Cedric Bessire. (2011). Analysis of Si, InAs, and Si-InAs tunnel diodes and tunnel FETs using different transport models. 263–266. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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