B. L. Yang

405 total citations
24 papers, 335 citations indexed

About

B. L. Yang is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Mechanics of Materials. According to data from OpenAlex, B. L. Yang has authored 24 papers receiving a total of 335 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 8 papers in Materials Chemistry and 3 papers in Mechanics of Materials. Recurrent topics in B. L. Yang's work include Semiconductor materials and devices (19 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers) and Integrated Circuits and Semiconductor Failure Analysis (6 papers). B. L. Yang is often cited by papers focused on Semiconductor materials and devices (19 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers) and Integrated Circuits and Semiconductor Failure Analysis (6 papers). B. L. Yang collaborates with scholars based in Hong Kong, China and Japan. B. L. Yang's co-authors include Hei Wong, P. T. Lai, Paul K. Chu, Yingchun Cheng, Kuniyuki Kakushima, Hiroshi Iwai, Shurong Dong, Anping Huang, Zehua Chen and Yan Han and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

B. L. Yang

24 papers receiving 321 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
B. L. Yang Hong Kong	11	282	130	44	37	24	24	335
T. Shin South Korea	6	132 0.5×	164 1.3×	36 0.8×	45 1.2×	40 1.7×	15	222
B. Pivac Croatia	10	361 1.3×	236 1.8×	51 1.2×	33 0.9×	36 1.5×	51	395
Dong-Ick Lee United States	9	284 1.0×	145 1.1×	95 2.2×	38 1.0×	92 3.8×	14	355
Motonobu Sato Japan	10	180 0.6×	287 2.2×	37 0.8×	41 1.1×	64 2.7×	25	352
J.L. Leray France	12	407 1.4×	108 0.8×	15 0.3×	40 1.1×	20 0.8×	28	441
G. Giroult-Matlakowski France	6	334 1.2×	96 0.7×	108 2.5×	20 0.5×	36 1.5×	12	354
S.G.H. Anderson United States	7	456 1.6×	166 1.3×	121 2.8×	27 0.7×	39 1.6×	13	503
Gert J. Leusink United States	13	370 1.3×	201 1.5×	45 1.0×	43 1.2×	23 1.0×	55	416
Jie Fan China	10	328 1.2×	96 0.7×	108 2.5×	32 0.9×	27 1.1×	53	392

Countries citing papers authored by B. L. Yang

Since Specialization

Citations

This map shows the geographic impact of B. L. Yang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. L. Yang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. L. Yang more than expected).

Fields of papers citing papers by B. L. Yang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. L. Yang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. L. Yang. The network helps show where B. L. Yang may publish in the future.

Co-authorship network of co-authors of B. L. Yang

This figure shows the co-authorship network connecting the top 25 collaborators of B. L. Yang. A scholar is included among the top collaborators of B. L. Yang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. L. Yang. B. L. Yang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Yang, B. L., et al.. (2024). A Wide Beamwidth Horn Antenna for Automotive Millimeter-Wave Radar. 1–3. 1 indexed citations

Hao, Huiying, et al.. (2024). Improved Performances of CsPbBr₃ Perovskite Solar Cells via PbI₂ Additive. ACS Applied Energy Materials. 8(1). 421–429. 1 indexed citations

Yang, B. L., et al.. (2024). High-Efficiency CsPbBr₃ Perovskite Solar Cells Obtained by Adding NH₄Ac in Ambient Air Conditions. ACS Applied Energy Materials. 7(22). 10367–10375. 4 indexed citations

Chen, Zehua, Hei Wong, Yan Han, Shurong Dong, & B. L. Yang. (2014). Temperature dependences of threshold voltage and drain-induced barrier lowering in 60nm gate length MOS transistors. Microelectronics Reliability. 54(6-7). 1109–1114. 27 indexed citations

Wong, Hei, B. L. Yang, & Shurong Dong. (2013). Thermal and voltage instabilities of hafnium oxide films prepared by sputtering technique. Microelectronics Reliability. 53(12). 1863–1867. 4 indexed citations

Wong, Hei, B. L. Yang, Shurong Dong, et al.. (2012). Current conduction and stability of CeO2/La2O3 stacked gate dielectric. Applied Physics Letters. 101(23). 12 indexed citations

Wong, Hei, B. L. Yang, Kuniyuki Kakushima, & Hiroshi Iwai. (2011). Subthreshold Characteristics of MOS Transistors With $ \hbox{CeO}_{2}/\hbox{La}_{2}\hbox{O}_{3}$ Stacked Gate Dielectric. IEEE Electron Device Letters. 32(8). 1002–1004. 10 indexed citations

Yang, B. L., et al.. (2011). Magnetic field gradient effects on Rayleigh-Taylor instability with continuous magnetic field and density profiles. Physics of Plasmas. 18(7). 15 indexed citations

Yang, B. L., et al.. (2011). Improving the electrical characteristics of MOS transistors with CeO2/La2O3 stacked gate dielectric. Microelectronics Reliability. 52(8). 1613–1616. 16 indexed citations

10.

Yang, B. L., et al.. (2008). Effects of aluminum incorporation on hafnium oxide film using plasma immersion ion implantation. Microelectronics Reliability. 48(11-12). 1765–1768. 11 indexed citations

11.

Yang, B. L., Hei Wong, Chi‐Wah Kok, et al.. (2007). Electrical Stability Improvement for Lanthanum Oxide Films by Nitrogen Incorporation using Plasma Immersion Ion Implantation. 150. 637–640. 2 indexed citations

12.

Wong, Hei, B. L. Yang, Anping Huang, et al.. (2007). Nitrogen Incorporation into Hafnium Oxide Films by Plasma Immersion Ion Implantation. Japanese Journal of Applied Physics. 46(5S). 3234–3234. 9 indexed citations

13.

Yang, B. L., et al.. (2005). Effects of TCE concentration on oxide-charge and interface properties of SiO2 thermally grown on SiC. Solid-State Electronics. 49(7). 1223–1227. 3 indexed citations

14.

Yang, B. L., et al.. (2005). Kinetics of Thermal Oxidation of 6H Silicon Carbide in Oxygen Plus Trichloroethylene. Journal of The Electrochemical Society. 152(6). G441–G441. 4 indexed citations

15.

Yang, B. L., P. T. Lai, & Hei Wong. (2004). Conduction mechanisms in MOS gate dielectric films. Microelectronics Reliability. 44(5). 709–718. 88 indexed citations

16.

Yang, B. L., et al.. (2002). Ultra-shallow n+p junction formed by PH3 and AsH3 plasma immersion ion implantation. Microelectronics Reliability. 42(12). 1985–1989. 4 indexed citations

17.

Yang, B. L., et al.. (2000). Electrical characterization of ultra-shallow n+p junctions formed by AsH3 plasma immersion implantation. Microelectronics Reliability. 40(2). 277–281. 2 indexed citations

18.

Yang, B. L., et al.. (1998). n+/p ultra-shallow junction formation with plasma immersion ion implantation. Microelectronics Reliability. 38(9). 1489–1494. 12 indexed citations

19.

Yang, B. L., Hei Wong, & Yingchun Cheng. (1995). Generation of Electron Traps at High Field in Silicon Oxide Films. Chinese Physics Letters. 12(7). 420–423. 9 indexed citations

20.

Yang, B. L., et al.. (1994). Temperature dependence of electronic conduction in thin nitrided oxides. Journal of Applied Physics. 75(3). 1832–1834. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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