M.A. Melendes

419 total citations
17 papers, 250 citations indexed

About

M.A. Melendes is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, M.A. Melendes has authored 17 papers receiving a total of 250 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 12 papers in Atomic and Molecular Physics, and Optics and 3 papers in Condensed Matter Physics. Recurrent topics in M.A. Melendes's work include Semiconductor Quantum Structures and Devices (10 papers), Semiconductor materials and devices (10 papers) and Radio Frequency Integrated Circuit Design (5 papers). M.A. Melendes is often cited by papers focused on Semiconductor Quantum Structures and Devices (10 papers), Semiconductor materials and devices (10 papers) and Radio Frequency Integrated Circuit Design (5 papers). M.A. Melendes collaborates with scholars based in United States and Germany. M.A. Melendes's co-authors include L.E. Larson, April S. Brown, S. E. Rosenbaum, M.J. Delaney, Umesh K. Mishra, Maggie Thompson, M. A. Thompson, M. Matloubian, L.D. Nguyen and J.J. Brown and has published in prestigious journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters and Electronics Letters.

In The Last Decade

M.A. Melendes

16 papers receiving 235 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M.A. Melendes United States 9 239 143 52 19 16 17 250
M.H. Juang Taiwan 13 431 1.8× 79 0.6× 73 1.4× 25 1.3× 7 0.4× 58 449
M. Hattendorf United States 9 355 1.5× 84 0.6× 46 0.9× 14 0.7× 54 3.4× 17 365
T. Ohnishi Japan 12 314 1.3× 181 1.3× 36 0.7× 14 0.7× 65 4.1× 20 348
A. Naem Canada 9 272 1.1× 105 0.7× 40 0.8× 62 3.3× 6 0.4× 28 311
Chunlei Zhan Singapore 13 392 1.6× 88 0.6× 104 2.0× 33 1.7× 29 1.8× 24 404
I. Lagnado United States 11 403 1.7× 87 0.6× 61 1.2× 60 3.2× 16 1.0× 32 424
C Bulucea United States 10 330 1.4× 67 0.5× 31 0.6× 26 1.4× 9 0.6× 30 342
Markus Herz Germany 7 148 0.6× 253 1.8× 82 1.6× 36 1.9× 8 0.5× 10 285
H. Hatakeyama Japan 15 564 2.4× 220 1.5× 42 0.8× 22 1.2× 8 0.5× 48 589
R. Surridge Canada 11 286 1.2× 105 0.7× 49 0.9× 28 1.5× 49 3.1× 30 312

Countries citing papers authored by M.A. Melendes

Since Specialization
Citations

This map shows the geographic impact of M.A. Melendes's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M.A. Melendes with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M.A. Melendes more than expected).

Fields of papers citing papers by M.A. Melendes

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M.A. Melendes. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M.A. Melendes. The network helps show where M.A. Melendes may publish in the future.

Co-authorship network of co-authors of M.A. Melendes

This figure shows the co-authorship network connecting the top 25 collaborators of M.A. Melendes. A scholar is included among the top collaborators of M.A. Melendes based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M.A. Melendes. M.A. Melendes is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

17 of 17 papers shown
1.
2.
Nguyen, Lan N., April S. Brown, M.J. Delaney, et al.. (2003). Vertical scaling of ultra-high-speed AlInAs-GaInAs HEMTs. 105–108. 6 indexed citations
3.
Matloubian, M., L.D. Nguyen, April S. Brown, et al.. (2002). High power and high efficiency AlInAs/GaInAs on InP HEMTs. 721–724. 12 indexed citations
4.
Kopf, R. F., D. C. Jacobson, A. Tate, et al.. (2002). Thin-film resistor fabrication for InP technology applications. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 20(3). 871–875. 10 indexed citations
5.
Brown, J.J., M. Matloubian, L.M. Jelloian, et al.. (2002). InP-based HEMTs with AlIn/sub 1-x/P Schottky barrier layers grown by gas-source MBE. 419–422.
6.
Larson, L.E., et al.. (2002). The integration of micro-machine fabrication with electronic device fabrication on III-V semiconductor materials. TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers. 51–54. 8 indexed citations
7.
8.
Kopf, R. F., R. A. Hamm, R. W. Ryan, et al.. (2000). Dry-etch fabrication of reduced area InGaAs/InP DHBT devices for high speed circuit applications. Journal of Electronic Materials. 29(2). 222–224. 6 indexed citations
9.
Tsai, H.S., et al.. (2000). 90 GHz basedband lumped amplifier. Electronics Letters. 36(22). 1833–1834. 5 indexed citations
10.
Brown, J.J., et al.. (1994). CH4/H2/Ar/Cl2 electron cyclotron resonance plasma etching of via holes for InP-based microwave devices. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 12(5). 2947–2951. 18 indexed citations
11.
Matloubian, M., April S. Brown, L.D. Nguyen, et al.. (1993). High-power V-band AlInAs/GaInAs on InP HEMTs. IEEE Electron Device Letters. 14(4). 188–189. 19 indexed citations
12.
Hu, Evelyn L., et al.. (1993). Highly selective reactive ion etch process for InP-based device fabrication using methane/hydrogen/argon. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 11(6). 2280–2283. 2 indexed citations
13.
Matloubian, M., April S. Brown, L.D. Nguyen, et al.. (1993). 20-GHz high-efficiency AlInAs-GaInAs on InP power HEMT. IEEE Microwave and Guided Wave Letters. 3(5). 142–144. 10 indexed citations
14.
Hu, Evelyn L., et al.. (1993). Micromachining in III–V semiconductors using wet photoelectrochemical etching. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 11(6). 2497–2501. 8 indexed citations
15.
Brown, J.J., April S. Brown, S. E. Rosenbaum, et al.. (1993). Study of the dependence of Ga/sub 0.47/In/sub 0.53/As/Al/sub x/ In/sub 1-x/As power HEMT breakdown voltage on Schottky layer design and device layout. IEEE Transactions on Electron Devices. 40(11). 2111–2112. 7 indexed citations
16.
Brown, April S., Umesh K. Mishra, M.A. Melendes, et al.. (1989). AlInAs-GaInAs HEMTs utilizing low-temperature AlInAs buffers grown by MBE. IEEE Electron Device Letters. 10(12). 565–567. 68 indexed citations
17.
Mishra, Umesh K., April S. Brown, L.M. Jelloian, et al.. (1989). Impact of buffer layer design on the performance of AlInAs-GaInAs HEMTs. IEEE Transactions on Electron Devices. 36(11). 2616–2616. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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