Takashi Hanada
About
In The Last Decade
Takashi Hanada
188 papers receiving 2.8k citations
Peers
Comparison fields: 5 of 73
- Materials Chemistry 1.9k
- Electronic, Optical and Magnetic Materials 1.1k
- Electrical and Electronic Engineering 1.1k
- Condensed Matter Physics 1.1k
- Atomic and Molecular Physics, and Optics 837
Countries citing papers authored by Takashi Hanada
This map shows the geographic impact of Takashi Hanada's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Takashi Hanada with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Takashi Hanada more than expected).
Fields of papers citing papers by Takashi Hanada
This network shows the impact of papers produced by Takashi Hanada. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Takashi Hanada. The network helps show where Takashi Hanada may publish in the future.
Co-authorship network of co-authors of Takashi Hanada
This figure shows the co-authorship network connecting the top 25 collaborators of Takashi Hanada. A scholar is included among the top collaborators of Takashi Hanada based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Takashi Hanada. Takashi Hanada is excluded from the visualization to improve readability, since they are connected to all nodes in the network.
All Works
| # | Work | Indexed citations |
|---|---|---|
| 1 | 0 | |
| 2 | 2 | |
| 3 | 0 | |
| 4 | 3 | |
| 5 | 5 | |
| 6 | 1 | |
| 7 | 2 | |
| 8 | 1 | |
| 9 | 1 | |
| 10 | 3 | |
| 11 | 6 | |
| 12 | 7 | |
| 13 | 9 | |
| 14 | 4 | |
| 15 | 1 | |
| 16 | Anisotropic X-ray rocking curve due to a damaged surface layer in a freestanding GaN thick film | 1 |
| 17 | Structural properties of CrN buffers for GaN growth | 6 |
| 18 | Roles of Kinetics and Energetics in the Growth of AlN by Plasma-Assisted Molecular Beam Epitaxy | 0 |
| 19 | Control of crystal polarity of ZnO and GaN epitaxial layers by interfacial engineering | 3 |
| 20 | 12 |
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.