М. В. Шалеев

575 citations

52 papers · 448 indexed · h-index 11

Co-authors: А. В. Новиков Mihail Petrov Frank Heyroth J. Schilling D. V. Yurasov Artem N. Yablonskiy Д. Н. Лобанов Z. F. Krasilnik
Topics: Silicon Nanostructures and Photoluminescence (35 papers)Photonic and Optical Devices (30 papers)Semiconductor Quantum Structures and Devices (27 papers)
Cited by: Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering Materials Chemistry
Journals: Nano Letters Applied Physics Letters Journal of Applied Physics
Partner nations: Russia Germany Japan

In The Last Decade

М. В. Шалеев

48 papers receiving 434 citations

Peers

Countries citing papers authored by М. В. Шалеев

Since Specialization

Citations

This map shows the geographic impact of М. В. Шалеев's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by М. В. Шалеев with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites М. В. Шалеев more than expected).

Fields of papers citing papers by М. В. Шалеев

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by М. В. Шалеев. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by М. В. Шалеев. The network helps show where М. В. Шалеев may publish in the future.

Co-authorship network of co-authors of М. В. Шалеев

This figure shows the co-authorship network connecting the top 25 collaborators of М. В. Шалеев. A scholar is included among the top collaborators of М. В. Шалеев based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with М. В. Шалеев. М. В. Шалеев is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	Symmetry breaking of bound states in the continuum in luminescence response of photonic crystal slabs with embedded Ge nanoislands 2024 ·Applied Physics Letters ·D. V. Yurasov,Sergey A. Dyakov,(unknown),S. G. Tikhodeev,N. A. Gippius,М. В. Степихова,(unknown),М. В. Шалеев,(unknown),(unknown),А. В. Новиков	3
2	Silicon-based light-emitting transistor with Ge(Si) nanoislands embedded in a photonic crystal: Control of the spectrum and spatial distribution of the emission 2024 ·Applied Physics Letters ·Artem N. Yablonskiy,(unknown),В. А. Захаров,D. V. Yurasov,М. В. Шалеев,(unknown),Alexey Mikhaylov,D. I. Tetelbaum,E. E. Rodyakina,(unknown),(unknown),(unknown),А. В. Новиков	0
3	Tuning the Luminescence Response of an Air-Hole Photonic Crystal Slab Using Etching Depth Variation 2023 ·Nanomaterials ·(unknown),D. V. Yurasov,М. В. Степихова,М. В. Шалеев,Artem N. Yablonskiy,(unknown),Sergey A. Dyakov,E. E. Rodyakina,(unknown),А. В. Новиков	4
4	Interaction of Ge(Si) Self-Assembled Nanoislands with Different Modes of Two-Dimensional Photonic Crystal 2022 ·Nanomaterials ·М. В. Степихова,Sergey A. Dyakov,(unknown),М. В. Шалеев,E. E. Rodyakina,А. В. Новиков	7
5	Near-infrared stimulated emission from indium-rich InGaN layers grown by plasma-assisted MBE 2021 ·Applied Physics Letters ·Д. Н. Лобанов,K. E. Kudryavtsev,(unknown),(unknown),P. A. Yunin,Е. В. Скороходов,М. В. Шалеев,А. В. Новиков,B. A. Andreev,Z. F. Krasilnik	5
6	Enhancing Photoluminescence: Photonic Bound States in the Continuum in Si Structures with the Self‐Assembled Ge Nanoislands (Laser Photonics Rev. 15(7)/2021) 2021 ·Laser & Photonics Review ·Sergey A. Dyakov,М. В. Степихова,Andrey Bogdanov,А. В. Новиков,D. V. Yurasov,М. В. Шалеев,Z. F. Krasilnik,S. G. Tikhodeev,N. A. Gippius	1
7	Luminescence of Spatially Ordered Self-Assembled Solitary Ge(Si) Nanoislands and their Groups Incorporated into Photonic Crystals 2020 ·Semiconductors ·(unknown),А. В. Новиков,М. В. Степихова,V. A. Zinovyev,E. E. Rodyakina,A. V. Nenashev,Sergey Mikhailovich Sergeev,(unknown),(unknown),М. В. Шалеев,С. А. Гусев,А. В. Двуреченский	7
8	Impact of Ge deposition temperature on parameters of c-Si solar cells with surface texture formed by etching of Si using SiGe islands as a mask 2020 ·Materials Science in Semiconductor Processing ·Van Hoang Nguyen,А. В. Новиков,М. В. Шалеев,D. V. Yurasov,Masanori Semma,Kazuhiro Gotoh,Yasuyoshi Kurokawa,Noritaka Usami	5
9	Impact of size distributions of Ge islands as etching masks for anisotropic etching on formation of anti-reflection structures 2019 ·Japanese Journal of Applied Physics ·(unknown),D. V. Yurasov,А. В. Новиков,М. В. Шалеев,Kazuhiro Gotoh,Yasuyoshi Kurokawa,Noritaka Usami	9
10	Light emission from Ge(Si)/SOI self-assembled nanoislands embedded in photonic crystal slabs of various periods with and without cavities 2018 ·Semiconductor Science and Technology ·М. В. Степихова,А. В. Новиков,Artem N. Yablonskiy,М. В. Шалеев,(unknown),(unknown),Е. В. Скороходов,Sergey Mikhailovich Sergeev,D. V. Yurasov,Z. F. Krasilnik	20
11	Formation of light-trapping structure using Ge islands grown by gas-source molecular beam epitaxy as etching masks 2018 ·Japanese Journal of Applied Physics ·(unknown),(unknown),(unknown),D. V. Yurasov,А. В. Новиков,М. В. Шалеев,(unknown),Е. А. Морозова,Yasuyoshi Kurokawa,Noritaka Usami	4
12	Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates 2017 ·Semiconductors ·N. V. Baidus,V. Ya. Aleshkin,А. А. Дубинов,K. E. Kudryavtsev,(unknown),А. В. Новиков,Д. А. Павлов,(unknown),(unknown),М. В. Шалеев,P. A. Yunin,D. V. Yurasov,Artem N. Yablonskiy,Z. F. Krasilnik	4
13	Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method 2016 ·Semiconductors ·Д. Н. Лобанов,А. В. Новиков,P. A. Yunin,(unknown),М. В. Шалеев,М. Н. Дроздов,(unknown),О. А. Бузанов,В. В. Аленков,(unknown),(unknown)	2
14	Plasmonic enhancement of four-particle radiative recombination in SiGe quantum wells 2016 ·Journal of Experimental and Theoretical Physics Letters ·V. S. Krivobok,С. Н. Николаев,А. В. Новиков,М. В. Шалеев,V. S. Bagaev,(unknown),В. С. Лебедев,(unknown),(unknown),(unknown)	3
15	SEMICONDUCTOR STRUCTURES, LOWDIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA Photoluminescence Line Width of SelfAssembled Ge(Si) Islands Arranged between Strained Si Layers 2011 ·М. В. Шалеев,А. В. Новиков,(unknown),Artem N. Yablonskiy,O. A. Kuznetsov,Д. Н. Лобанов,Z. F. Krasilnik	1
16	Narrow photoluminescence peak from Ge(Si) islands embedded between tensile‐strained Si layers 2011 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·М. В. Шалеев,А. В. Новиков,(unknown),Artem N. Yablonskiy,O. A. Kuznetsov,(unknown),Д. Н. Лобанов,Z. F. Krasilnik	0
17	Study of the transition of the epitaxial Ge film from layer-to-layer to three-dimensional growth in heterostructures with strained SiGe sublayers 2010 ·Semiconductors ·Yu. N. Drozdov,А. В. Новиков,М. В. Шалеев,D. V. Yurasov	3
18	Effects of boron and phosphorus doping on the photoluminescence of self-assembled germanium quantum dots 2009 ·Applied Physics Letters ·(unknown),(unknown),Conan Weiland,(unknown),М. В. Шалеев,А. В. Новиков,R. L. Opila,Sylvain G. Cloutier,J. Kolodzey	9
19	Special features of the formation of Ge(Si) islands on the relaxed Si1−xGex/Si(001) buffer layers 2006 ·Semiconductors ·N. V. Vostokov,Yu. N. Drozdov,Z. F. Krasilnik,O. A. Kuznetsov,Д. Н. Лобанов,А. В. Новиков,М. В. Шалеев	4
20	Photoluminescence of Ge(Si) self-assembled islands embedded in a tensile-strained Si layer 2006 ·Applied Physics Letters ·М. В. Шалеев,А. В. Новиков,Artem N. Yablonskiy,Yu. N. Drozdov,Д. Н. Лобанов,Z. F. Krasilnik,O. A. Kuznetsov	14

About М. В. Шалеев

М. В. Шалеев is a scholar working on Atomic and Molecular Physics, and Optics, Materials Chemistry and Electrical and Electronic Engineering, having authored 52 papers that have together received 448 indexed citations. Recurring topics across this work include Silicon Nanostructures and Photoluminescence (35 papers), Photonic and Optical Devices (30 papers) and Semiconductor Quantum Structures and Devices (27 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (316 citations), Electrical and Electronic Engineering (307 citations) and Materials Chemistry (226 citations). М. В. Шалеев has collaborated with scholars based in Russia, Germany and Japan. Frequent co-authors include А. В. Новиков, Mihail Petrov, Frank Heyroth, J. Schilling, D. V. Yurasov, Artem N. Yablonskiy, Д. Н. Лобанов, Z. F. Krasilnik, Yu. N. Drozdov and O. A. Kuznetsov. Their work appears in journals such as Nano Letters, Applied Physics Letters and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact