М. В. Шалеев

575 total citations
52 papers, 448 citations indexed

About

М. В. Шалеев is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, М. В. Шалеев has authored 52 papers receiving a total of 448 indexed citations (citations by other indexed papers that have themselves been cited), including 43 papers in Atomic and Molecular Physics, and Optics, 39 papers in Electrical and Electronic Engineering and 37 papers in Materials Chemistry. Recurrent topics in М. В. Шалеев's work include Silicon Nanostructures and Photoluminescence (35 papers), Photonic and Optical Devices (30 papers) and Semiconductor Quantum Structures and Devices (27 papers). М. В. Шалеев is often cited by papers focused on Silicon Nanostructures and Photoluminescence (35 papers), Photonic and Optical Devices (30 papers) and Semiconductor Quantum Structures and Devices (27 papers). М. В. Шалеев collaborates with scholars based in Russia, Germany and Japan. М. В. Шалеев's co-authors include А. В. Новиков, Mihail Petrov, Frank Heyroth, J. Schilling, D. V. Yurasov, Artem N. Yablonskiy, Д. Н. Лобанов, Z. F. Krasilnik, Yu. N. Drozdov and O. A. Kuznetsov and has published in prestigious journals such as Nano Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

М. В. Шалеев

48 papers receiving 434 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
М. В. Шалеев Russia	11	316	307	226	155	59	52	448
Vy Yam France	13	428 1.4×	413 1.3×	279 1.2×	215 1.4×	30 0.5×	51	616
Andrew Briggs United States	8	123 0.4×	257 0.8×	202 0.9×	139 0.9×	77 1.3×	24	407
Tung‐Po Hsieh Taiwan	11	305 1.0×	454 1.5×	280 1.2×	105 0.7×	21 0.4×	24	547
Vas. P. Kunets United States	12	334 1.1×	256 0.8×	216 1.0×	225 1.5×	106 1.8×	29	495
Nathaniel J. Quitoriano Canada	11	258 0.8×	374 1.2×	150 0.7×	254 1.6×	24 0.4×	44	500
A. A. Bloshkin Russia	14	354 1.1×	287 0.9×	239 1.1×	161 1.0×	31 0.5×	52	476
Jan Van Steenbergen Belgium	15	240 0.8×	638 2.1×	190 0.8×	142 0.9×	25 0.4×	29	665
T. V. L’vova Russia	11	272 0.9×	282 0.9×	112 0.5×	123 0.8×	19 0.3×	50	383
K. Lyutovich Germany	15	392 1.2×	679 2.2×	236 1.0×	176 1.1×	20 0.3×	48	787
Л. И. Федина Russia	11	216 0.7×	299 1.0×	214 0.9×	76 0.5×	19 0.3×	61	436

Countries citing papers authored by М. В. Шалеев

Since Specialization

Citations

This map shows the geographic impact of М. В. Шалеев's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by М. В. Шалеев with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites М. В. Шалеев more than expected).

Fields of papers citing papers by М. В. Шалеев

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by М. В. Шалеев. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by М. В. Шалеев. The network helps show where М. В. Шалеев may publish in the future.

Co-authorship network of co-authors of М. В. Шалеев

This figure shows the co-authorship network connecting the top 25 collaborators of М. В. Шалеев. A scholar is included among the top collaborators of М. В. Шалеев based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with М. В. Шалеев. М. В. Шалеев is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Yurasov, D. V., Sergey A. Dyakov, S. G. Tikhodeev, et al.. (2024). Symmetry breaking of bound states in the continuum in luminescence response of photonic crystal slabs with embedded Ge nanoislands. Applied Physics Letters. 125(2). 3 indexed citations

Yablonskiy, Artem N., В. А. Захаров, D. V. Yurasov, et al.. (2024). Silicon-based light-emitting transistor with Ge(Si) nanoislands embedded in a photonic crystal: Control of the spectrum and spatial distribution of the emission. Applied Physics Letters. 125(23).

Yurasov, D. V., М. В. Степихова, М. В. Шалеев, et al.. (2023). Tuning the Luminescence Response of an Air-Hole Photonic Crystal Slab Using Etching Depth Variation. Nanomaterials. 13(10). 1678–1678. 4 indexed citations

Степихова, М. В., et al.. (2022). Interaction of Ge(Si) Self-Assembled Nanoislands with Different Modes of Two-Dimensional Photonic Crystal. Nanomaterials. 12(15). 2687–2687. 7 indexed citations

Лобанов, Д. Н., K. E. Kudryavtsev, P. A. Yunin, et al.. (2021). Near-infrared stimulated emission from indium-rich InGaN layers grown by plasma-assisted MBE. Applied Physics Letters. 118(15). 5 indexed citations

Dyakov, Sergey A., М. В. Степихова, Andrey Bogdanov, et al.. (2021). Enhancing Photoluminescence: Photonic Bound States in the Continuum in Si Structures with the Self‐Assembled Ge Nanoislands (Laser Photonics Rev. 15(7)/2021). Laser & Photonics Review. 15(7). 1 indexed citations

Новиков, А. В., М. В. Степихова, V. A. Zinovyev, et al.. (2020). Luminescence of Spatially Ordered Self-Assembled Solitary Ge(Si) Nanoislands and their Groups Incorporated into Photonic Crystals. Semiconductors. 54(8). 853–859. 7 indexed citations

Nguyen, Van Hoang, А. В. Новиков, М. В. Шалеев, et al.. (2020). Impact of Ge deposition temperature on parameters of c-Si solar cells with surface texture formed by etching of Si using SiGe islands as a mask. Materials Science in Semiconductor Processing. 114. 105065–105065. 5 indexed citations

Yurasov, D. V., А. В. Новиков, М. В. Шалеев, et al.. (2019). Impact of size distributions of Ge islands as etching masks for anisotropic etching on formation of anti-reflection structures. Japanese Journal of Applied Physics. 58(4). 45505–45505. 9 indexed citations

10.

Степихова, М. В., А. В. Новиков, Artem N. Yablonskiy, et al.. (2018). Light emission from Ge(Si)/SOI self-assembled nanoislands embedded in photonic crystal slabs of various periods with and without cavities. Semiconductor Science and Technology. 34(2). 24003–24003. 20 indexed citations

11.

Yurasov, D. V., А. В. Новиков, М. В. Шалеев, et al.. (2018). Formation of light-trapping structure using Ge islands grown by gas-source molecular beam epitaxy as etching masks. Japanese Journal of Applied Physics. 57(8S3). 08RB04–08RB04. 4 indexed citations

12.

Baidus, N. V., V. Ya. Aleshkin, А. А. Дубинов, et al.. (2017). Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates. Semiconductors. 51(11). 1527–1530. 4 indexed citations

13.

Лобанов, Д. Н., А. В. Новиков, P. A. Yunin, et al.. (2016). Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method. Semiconductors. 50(11). 1511–1514. 2 indexed citations

14.

Krivobok, V. S., С. Н. Николаев, А. В. Новиков, et al.. (2016). Plasmonic enhancement of four-particle radiative recombination in SiGe quantum wells. Journal of Experimental and Theoretical Physics Letters. 104(4). 231–235. 3 indexed citations

15.

Шалеев, М. В., А. В. Новиков, Artem N. Yablonskiy, et al.. (2011). SEMICONDUCTOR STRUCTURES, LOWDIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA Photoluminescence Line Width of SelfAssembled Ge(Si) Islands Arranged between Strained Si Layers. 1 indexed citations

16.

Шалеев, М. В., А. В. Новиков, Artem N. Yablonskiy, et al.. (2011). Narrow photoluminescence peak from Ge(Si) islands embedded between tensile‐strained Si layers. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 8(3). 1055–1059.

17.

Drozdov, Yu. N., А. В. Новиков, М. В. Шалеев, & D. V. Yurasov. (2010). Study of the transition of the epitaxial Ge film from layer-to-layer to three-dimensional growth in heterostructures with strained SiGe sublayers. Semiconductors. 44(4). 519–524. 3 indexed citations

18.

Weiland, Conan, М. В. Шалеев, А. В. Новиков, et al.. (2009). Effects of boron and phosphorus doping on the photoluminescence of self-assembled germanium quantum dots. Applied Physics Letters. 94(18). 9 indexed citations

19.

Vostokov, N. V., Yu. N. Drozdov, Z. F. Krasilnik, et al.. (2006). Special features of the formation of Ge(Si) islands on the relaxed Si1−xGex/Si(001) buffer layers. Semiconductors. 40(2). 229–233. 4 indexed citations

20.

Шалеев, М. В., А. В. Новиков, Artem N. Yablonskiy, et al.. (2006). Photoluminescence of Ge(Si) self-assembled islands embedded in a tensile-strained Si layer. Applied Physics Letters. 88(1). 14 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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