Μ. Schaller

415 total citations
31 papers, 256 citations indexed

About

Μ. Schaller is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Mechanics of Materials. According to data from OpenAlex, Μ. Schaller has authored 31 papers receiving a total of 256 indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Electrical and Electronic Engineering, 19 papers in Electronic, Optical and Magnetic Materials and 12 papers in Mechanics of Materials. Recurrent topics in Μ. Schaller's work include Copper Interconnects and Reliability (19 papers), Semiconductor materials and devices (19 papers) and Metal and Thin Film Mechanics (12 papers). Μ. Schaller is often cited by papers focused on Copper Interconnects and Reliability (19 papers), Semiconductor materials and devices (19 papers) and Metal and Thin Film Mechanics (12 papers). Μ. Schaller collaborates with scholars based in Germany, United States and France. Μ. Schaller's co-authors include Frank Richter, Stefan E. Schulz, J. Hahn, M. Friedrich, Dietrich R. T. Zahn, Th. Welzel, Sven Zimmermann, Thomas Geßner, Oliver M. Böhm and C. Radehaus and has published in prestigious journals such as Journal of The Electrochemical Society, The Journal of Physical Chemistry A and Surface Science.

In The Last Decade

Μ. Schaller

29 papers receiving 251 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Μ. Schaller Germany 9 170 132 120 76 28 31 256
V. Raballand Germany 8 257 1.5× 56 0.4× 94 0.8× 50 0.7× 26 0.9× 11 349
O. Louveau France 10 262 1.5× 99 0.8× 52 0.4× 210 2.8× 20 0.7× 23 297
C. Harris Sweden 10 271 1.6× 30 0.2× 93 0.8× 52 0.7× 46 1.6× 12 325
Haris Naeem Abbasi China 12 206 1.2× 72 0.5× 217 1.8× 76 1.0× 35 1.3× 33 340
Kouichi Ono Kouichi Ono Japan 11 387 2.3× 85 0.6× 320 2.7× 58 0.8× 22 0.8× 17 455
Yury Kuzminykh Switzerland 12 262 1.5× 32 0.2× 224 1.9× 32 0.4× 70 2.5× 30 347
Abdennaceur Karoui United States 12 230 1.4× 29 0.2× 184 1.5× 59 0.8× 84 3.0× 45 333
A. D. Stewart United Kingdom 8 246 1.4× 96 0.7× 316 2.6× 16 0.2× 34 1.2× 17 361
Kun‐An Chiu Taiwan 9 299 1.8× 39 0.3× 131 1.1× 44 0.6× 83 3.0× 31 351
Shuwei Fan China 12 233 1.4× 82 0.6× 280 2.3× 57 0.8× 44 1.6× 34 347

Countries citing papers authored by Μ. Schaller

Since Specialization
Citations

This map shows the geographic impact of Μ. Schaller's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Μ. Schaller with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Μ. Schaller more than expected).

Fields of papers citing papers by Μ. Schaller

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Μ. Schaller. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Μ. Schaller. The network helps show where Μ. Schaller may publish in the future.

Co-authorship network of co-authors of Μ. Schaller

This figure shows the co-authorship network connecting the top 25 collaborators of Μ. Schaller. A scholar is included among the top collaborators of Μ. Schaller based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Μ. Schaller. Μ. Schaller is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Böhm, Oliver M., et al.. (2013). Novel k-restoring scheme for damaged ultra-low-k materials. Microelectronic Engineering. 112. 63–66. 4 indexed citations
2.
Zimmermann, Sven, et al.. (2012). Determination of Surface Energy Characteristics of Plasma Processed Ultra Low-K Dielectrics for Optimized Wetting in Wet Chemical Plasma Etch Residue Removal. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 195. 110–113. 1 indexed citations
3.
Zimmermann, Sven, et al.. (2012). Optimized Wetting Behavior of Water-Based Cleaning Solutions for Plasma Etch Residue Removal by Application of Surfactants. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 187. 201–205. 1 indexed citations
4.
Böhm, Oliver M., et al.. (2012). Silylation of silicon bonded hydroxyl groups by silazanes and siloxanes containing an acetoxy group. N-trimethylsilylimidazole vs. dimethyldiacetoxysilane. Computational and Theoretical Chemistry. 991. 44–47. 2 indexed citations
5.
Schaller, Μ., et al.. (2011). Electrical property improvements of ultra low-k ILD using a silylation process feasible for process integration.. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 1–3. 1 indexed citations
6.
Schaller, Μ., et al.. (2010). How to evaluate surface free energies of dense and ultra low-κ dielectrics in pattern structures. Microelectronic Engineering. 88(5). 680–683. 2 indexed citations
7.
Zimmermann, Sven, Μ. Schaller, Henrik Zimmermann, et al.. (2010). Influence of the additives argon, O2, C4F8, H2, N2 and CO on plasma conditions and process results during the etch of SiCOH in CF4 plasma. Microelectronic Engineering. 88(5). 671–676. 16 indexed citations
8.
Schaller, Μ., et al.. (2010). Chemical Repair of Plasma Damaged Porous Ultra Low-k SiOCH Film using a Vapor Phase Process. ECS Transactions. 25(38). 19–30. 2 indexed citations
9.
Achleitner, Ann‐Kristin, et al.. (2009). Risk of Private Equity Fund-of-Fund Investments - A Detailed Cash Flow-Based Approach. SSRN Electronic Journal. 1 indexed citations
10.
Schaller, Μ., et al.. (2009). Improved characterization of Fourier transform infrared spectra analysis for post-etched ultra-low-κ SiOCH dielectric using chemometric methods. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 27(1). 521–526. 7 indexed citations
11.
Schaller, Μ., et al.. (2009). Surface Energy and Wetting Behaviour of Plasma Etched Porous SiCOH Surfaces and Plasma Etch Residue Cleaning Solutions. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 145-146. 319–322. 5 indexed citations
12.
Zimmermann, Sven, et al.. (2009). Analysis of the impact of different additives during etch processes of dense and porous low-k with OES and QMS. Microelectronic Engineering. 87(3). 337–342. 17 indexed citations
13.
Schaller, Μ., et al.. (2009). Characterization of plasma damaged porous ULK SiCOH layers in aspect of changes in the diffusion behavior of solvents and repair-chemicals. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 17. 83–85. 2 indexed citations
14.
Wu, Aiping, et al.. (2009). Development of compatible wet-clean stripper for integration of CoWP metal cap in Cu/low-k interconnects. Microelectronic Engineering. 87(9). 1685–1688.
15.
Schaller, Μ., et al.. (2002). MMIC GaAs transimpedance amplifiers for optoelectronic applications. 165–168. 4 indexed citations
16.
Dolfi, Daniel, et al.. (2002). Photonics for airborne phased array radars. 379–382. 13 indexed citations
17.
Welzel, Th., et al.. (1997). Process diagnostics during the deposition of cubic boron nitride. Surface and Coatings Technology. 90(3). 275–284. 26 indexed citations
18.
Bouchoule, S., et al.. (1996). Wide band optoelectronic upconverter for radio over fibre applications at 28/38/60 GHz. 3. 297–300. 4 indexed citations
19.
Hahn, J., et al.. (1996). Cubic boron nitride films by d.c. and r.f. magnetron sputtering: layer characterization and process diagnostics. Diamond and Related Materials. 5(10). 1103–1112. 70 indexed citations
20.
Bouchoule, S., et al.. (1996). Wideband optoelectronic mixer for radio over fibreapplications at 28/38/60 GHz. Electronics Letters. 32(20). 1900–1902. 2 indexed citations

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