M. Prietsch

1.4k total citations
40 papers, 1.1k citations indexed

About

M. Prietsch is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Surfaces, Coatings and Films. According to data from OpenAlex, M. Prietsch has authored 40 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 32 papers in Atomic and Molecular Physics, and Optics, 18 papers in Electrical and Electronic Engineering and 11 papers in Surfaces, Coatings and Films. Recurrent topics in M. Prietsch's work include Surface and Thin Film Phenomena (19 papers), Semiconductor materials and interfaces (13 papers) and Semiconductor materials and devices (12 papers). M. Prietsch is often cited by papers focused on Surface and Thin Film Phenomena (19 papers), Semiconductor materials and interfaces (13 papers) and Semiconductor materials and devices (12 papers). M. Prietsch collaborates with scholars based in Germany, United States and Spain. M. Prietsch's co-authors include G. Kaindl, R. Ludeke, M. Domke, C. Laubschat, T. Mandel, A. Samsavar, J. Enrique Ortega, M. Teresa Cuberes, Rodolfo Miranda and C. Xue and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

M. Prietsch

40 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. Prietsch Germany 19 906 600 258 184 138 40 1.1k
I. M. Vitomirov United States 18 680 0.8× 411 0.7× 384 1.5× 216 1.2× 129 0.9× 51 935
C. J. Karlsson Sweden 13 874 1.0× 543 0.9× 421 1.6× 297 1.6× 86 0.6× 16 1.2k
Akira Kawazu Japan 20 798 0.9× 386 0.6× 156 0.6× 280 1.5× 145 1.1× 73 1.1k
C. Capasso United States 22 457 0.5× 679 1.1× 254 1.0× 265 1.4× 124 0.9× 78 1.1k
E. Landemark Sweden 21 1.4k 1.5× 774 1.3× 500 1.9× 475 2.6× 163 1.2× 32 1.7k
I. Abbati Italy 22 1.0k 1.1× 505 0.8× 556 2.2× 287 1.6× 179 1.3× 87 1.4k
P. E. Freeland United States 18 560 0.6× 661 1.1× 135 0.5× 566 3.1× 152 1.1× 26 1.2k
D. A. Woolf United Kingdom 21 916 1.0× 626 1.0× 141 0.5× 290 1.6× 136 1.0× 75 1.1k
G. Rangelov Germany 23 833 0.9× 398 0.7× 295 1.1× 511 2.8× 133 1.0× 52 1.2k
D. Bruchmann Germany 8 509 0.6× 348 0.6× 190 0.7× 330 1.8× 72 0.5× 9 780

Countries citing papers authored by M. Prietsch

Since Specialization
Citations

This map shows the geographic impact of M. Prietsch's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Prietsch with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Prietsch more than expected).

Fields of papers citing papers by M. Prietsch

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Prietsch. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Prietsch. The network helps show where M. Prietsch may publish in the future.

Co-authorship network of co-authors of M. Prietsch

This figure shows the co-authorship network connecting the top 25 collaborators of M. Prietsch. A scholar is included among the top collaborators of M. Prietsch based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Prietsch. M. Prietsch is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Sánchez, O., J. M. Garcı́a, P. Segovia, et al.. (1995). Lateral confinement of surface states on stepped Cu(111). Physical review. B, Condensed matter. 52(11). 7894–7897. 68 indexed citations
2.
Prietsch, M.. (1995). Ballistic-electron emission microscopy (BEEM): studies of metal/semiconductor interfaces with nanometer resolution. Physics Reports. 253(4). 163–233. 167 indexed citations
3.
McLean, A. B., David N. McIlroy, D. Heskett, et al.. (1994). Surface localized states on InAs(110). Surface Science. 312(3). 361–368. 16 indexed citations
4.
Cuberes, M. Teresa, et al.. (1994). Ballistic-electron emission microscopy study of the Au/Si(111)7×7 and Au/CaF2/Si(111)7×7 interfaces. Applied Physics Letters. 64(17). 2300–2302. 17 indexed citations
5.
Молодцов, С. Л., et al.. (1993). Formation of the Ho/CdSe(101¯0) interface. Physical review. B, Condensed matter. 48(24). 17867–17871. 1 indexed citations
6.
Bauer, A., M. Teresa Cuberes, M. Prietsch, & G. Kaindl. (1993). Ballistic-electron emission microscopy at metal/GaP(110) interfaces: Electron transport and Schottky-barrier heights. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 11(4). 1584–1590. 9 indexed citations
7.
McIlroy, David N., D. Heskett, A. B. McLean, et al.. (1993). Occupied surface-state bands of Bi(1×1) overlayers on an InAs(110) surface grown by molecular-beam epitaxy. Physical review. B, Condensed matter. 47(7). 3751–3759. 15 indexed citations
8.
McLean, A. B., David N. McIlroy, D. Heskett, et al.. (1992). The electronic structure of molecular beam epitaxy grown InAs (110). Canadian Journal of Physics. 70(10-11). 1099–1103. 3 indexed citations
9.
Ludeke, R., M. Prietsch, & A. Samsavar. (1991). Ballistic electron emission spectroscopy of metals on GaP(110). Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 9(4). 2342–2348. 43 indexed citations
10.
Ludeke, R. & M. Prietsch. (1991). Ballistic electron emission spectroscopy of noble metal–GaP(110) interfaces. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 9(3). 885–890. 23 indexed citations
11.
McLean, A. B., R. Ludeke, M. Prietsch, et al.. (1991). The polarization dependence of Bi‐induced surface states on GaAs(110). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 9(3). 1836–1839. 2 indexed citations
12.
Prietsch, M. & R. Ludeke. (1991). BEEM spectroscopy at interfaces of Au, Ag, Cu, Mg and Ni films with n-GaP(110). Surface Science. 251-252. 413–417. 16 indexed citations
13.
Heskett, D., A. B. McLean, R. Ludeke, et al.. (1991). Metal-induced states on the GaAs(110) surface probed by angle-resolved photoemission spectroscopy. Applied Surface Science. 48-49. 260–263. 2 indexed citations
14.
Prietsch, M., et al.. (1991). Surface photovoltage at Cs/GaAs(110): Photoemission experiments and theoretical modeling. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 9(4). 2108–2113. 14 indexed citations
15.
Bauer, Andreas, M. Prietsch, С. Л. Молодцов, C. Laubschat, & G. Kaindl. (1991). Systematic study of the surface photovoltaic effect in photoemission. Physical review. B, Condensed matter. 44(8). 4002–4005. 14 indexed citations
16.
Ortega, J. Enrique, J. Ferrón, Rodolfo Miranda, et al.. (1989). Enhanced oxidation of GaAs(110) by adsorbed K atoms. Surface Science. 211-212. 1106–1112. 12 indexed citations
17.
Prietsch, M., M. Domke, C. Laubschat, et al.. (1989). Photoemission study of alkali/GaAs(110) interfaces. The European Physical Journal B. 74(1). 21–33. 98 indexed citations
18.
Prietsch, M., M. Domke, C. Laubschat, & G. Kaindl. (1989). Prietschet al.Reply. Physical Review Letters. 62(5). 607–607. 1 indexed citations
19.
Prietsch, M., M. Domke, C. Laubschat, et al.. (1989). Mechanisms of band bending at CsOx/GaAs(110) interfaces: Influence of overlayer stoichiometry and interfacial reactivity. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 7(4). 986–990. 5 indexed citations
20.
Domke, M., C. Laubschat, M. Prietsch, et al.. (1986). Experimental Proof for Coordination-Dependent Valence of Tm Metal. Physical Review Letters. 56(12). 1287–1290. 39 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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