C. Dahl

568 total citations
27 papers, 409 citations indexed

About

C. Dahl is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, C. Dahl has authored 27 papers receiving a total of 409 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Electrical and Electronic Engineering, 12 papers in Atomic and Molecular Physics, and Optics and 5 papers in Materials Chemistry. Recurrent topics in C. Dahl's work include Advancements in Semiconductor Devices and Circuit Design (12 papers), Semiconductor materials and devices (12 papers) and Quantum and electron transport phenomena (8 papers). C. Dahl is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (12 papers), Semiconductor materials and devices (12 papers) and Quantum and electron transport phenomena (8 papers). C. Dahl collaborates with scholars based in Germany, France and United States. C. Dahl's co-authors include J. P. Kotthaus, W. Schlapp, H. Nickel, Ralf Brederlow, R. Thewes, W. Weber, D. Schmitt‐Landsiedel, B. Jusserand, Andreas B. Pribil and B. Etienne and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and IEEE Transactions on Electron Devices.

In The Last Decade

C. Dahl

26 papers receiving 391 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
C. Dahl Germany	11	291	186	72	37	32	27	409
Hao‐Hsiung Lin Taiwan	11	254 0.9×	145 0.8×	67 0.9×	13 0.4×	44 1.4×	25	303
K. Stein United States	14	601 2.1×	103 0.6×	81 1.1×	45 1.2×	35 1.1×	40	650
John J. Pekarik United States	15	812 2.8×	179 1.0×	92 1.3×	32 0.9×	40 1.3×	53	853
M. Tutt United States	11	380 1.3×	179 1.0×	43 0.6×	49 1.3×	18 0.6×	42	402
W. Hafez United States	13	517 1.8×	267 1.4×	44 0.6×	38 1.0×	42 1.3×	28	546
Arthur D. van Rheenen Norway	11	278 1.0×	161 0.9×	40 0.6×	19 0.5×	37 1.2×	45	333
B. Jagannathan United States	20	1.1k 3.7×	167 0.9×	109 1.5×	27 0.7×	82 2.6×	55	1.1k
F.-J. Tegude Germany	10	347 1.2×	177 1.0×	114 1.6×	16 0.4×	48 1.5×	33	383
J. Sarma United Kingdom	12	465 1.6×	261 1.4×	66 0.9×	26 0.7×	24 0.8×	59	514
K.-C. Wang United States	12	737 2.5×	305 1.6×	56 0.8×	72 1.9×	27 0.8×	15	762

Countries citing papers authored by C. Dahl

Since Specialization

Citations

This map shows the geographic impact of C. Dahl's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Dahl with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Dahl more than expected).

Fields of papers citing papers by C. Dahl

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Dahl. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Dahl. The network helps show where C. Dahl may publish in the future.

Co-authorship network of co-authors of C. Dahl

This figure shows the co-authorship network connecting the top 25 collaborators of C. Dahl. A scholar is included among the top collaborators of C. Dahl based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Dahl. C. Dahl is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Langheinrich, W., Michael Friedrich, Laura K. Diebel, et al.. (2025). Industrially Fabricated Single-Electron Quantum Dots in Si/Si—Ge Heterostructures. IEEE Electron Device Letters. 46(5). 868–871. 4 indexed citations

Friedrich, Michael, W. Langheinrich, Maik Simon, et al.. (2023). Fabrication of gate electrodes for scalable quantum computing using CMOS industry compatible e-beam lithography and numerical simulation of the resulting quantum device. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 36–36. 2 indexed citations

Pregl, Sebastian, et al.. (2022). High-G Acceleration Sensors for the Automotive Industry. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 19. 1–6.

Manger, D., W. Liebl, S. Boguth, et al.. (2018). Integration of SiGe HBT with <tex>$\text{f}_{\text{T}}=305\ \text{GHz},\ \text{f}_{\max}=537 \text{GHz}$</tex> in 130nm and 90nm CMOS. 76–79. 10 indexed citations

Böck, J., Klaus Aufinger, S. Boguth, et al.. (2015). SiGe HBT and BiCMOS process integration optimization within the DOTSEVEN project. 121–124. 125 indexed citations

Tilke, A., et al.. (2005). Visualizing the Doping Profile of a Silicon Germanium HBT With Polysilicon Emitter Using Electron Holography. IEEE Transactions on Electron Devices. 52(6). 1067–1071. 4 indexed citations

Tilke, A., et al.. (2005). As-doped polysilicon emitters with interfacial oxides and correlation to bipolar device characteristics. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 23(5). 1877–1882. 1 indexed citations

Tilke, A., et al.. (2004). Quarter micron BiCMOS technology platform with implanted-base- or SiGe-bipolar transistor for wireless communication ICs. Solid-State Electronics. 48(12). 2243–2249. 10 indexed citations

Brederlow, Ralf, W. Weber, C. Dahl, D. Schmitt‐Landsiedel, & R. Thewes. (2002). A physically based model for low-frequency noise of poly-silicon resistors. 89–92. 8 indexed citations

10.

Brederlow, Ralf, W. Weber, C. Dahl, D. Schmitt‐Landsiedel, & R. Thewes. (2001). Low-frequency noise of integrated polysilicon resistors. IEEE Transactions on Electron Devices. 48(6). 1180–1187. 35 indexed citations

11.

Brederlow, Ralf, et al.. (1998). Influence of Fluorinated Gate Oxides on the Low Frequency Noise of MOS Transistors under Analog Operation. European Solid-State Device Research Conference. 472–475. 9 indexed citations

12.

Dahl, C., B. Jusserand, & B. Etienne. (1996). Raman scattering by plasmons in deep etched quantum wires. Solid-State Electronics. 40(1-8). 261–264. 6 indexed citations

13.

Jusserand, B., et al.. (1996). Folded and confined one-dimensional plasmons in modulated wires. Physical review. B, Condensed matter. 54(16). R11098–R11101. 9 indexed citations

14.

Dahl, C., B. Jusserand, & B. Etienne. (1995). Selection rules in Raman scattering by plasmons in quantum wires. Physical review. B, Condensed matter. 51(23). 17211–17214. 11 indexed citations

15.

Dahl, C., S. Manus, J. P. Kotthaus, H. Nickel, & W. Schlapp. (1995). Edge magnetoplasmons in single two-dimensional electron disks at microwave frequencies: Determination of the lateral depletion length. Applied Physics Letters. 66(17). 2271–2273. 14 indexed citations

16.

Dahl, C., B. Jusserand, A. Izraël, et al.. (1994). Plasmons in the modulated and confined 2DEG: A Raman scattering study. Superlattices and Microstructures. 15(4). 441–445. 8 indexed citations

17.

Dahl, C., J. P. Kotthaus, H. Nickel, & W. Schlapp. (1993). Magnetoplasma resonances in two-dimensional electron rings. Physical review. B, Condensed matter. 48(20). 15480–15483. 36 indexed citations

18.

Dahl, C., J. P. Kotthaus, H. Nickel, & W. Schlapp. (1992). Coulomb coupling in arrays of electron disks. Physical review. B, Condensed matter. 46(23). 15590–15593. 23 indexed citations

19.

Dahl, C., et al.. (1991). Dimensional resonances in elliptic electron disks. Solid State Communications. 80(9). 673–676. 27 indexed citations

20.

Dahl, C.. (1990). Plasmons in periodically modulated inversion layers. Physical review. B, Condensed matter. 41(9). 5763–5769. 25 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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