J. Knall

1.3k citations

34 papers · 1.1k indexed · h-index 18

Surfaces, Coatings and Films top 5%
- Electron and X-Ray Spectroscopy Techniques 5
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor materials and interfaces 10
- Surface and Thin Film Phenomena 8
- Force Microscopy Techniques and Applications 6
Structural Biology top 10%
Electrical and Electronic Engineering top 5%
- Silicon and Solar Cell Technologies 11
- Integrated Circuits and Semiconductor Failure Analysis 9
- Semiconductor materials and devices 9
Computational Mechanics top 5%
- Ion-surface interactions and analysis 9

Co-authors: J. B. Pethica J.‐E. Sundgren G. V. Hansson J. E. Greene Scott A. Barnett W. H. Weinberg J.H. Wilson Andrew J. Mayne
Cited by: Surfaces, Coatings and Films Atomic and Molecular Physics, and Optics Structural Biology
Journals: Surface Science (7 papers)Applied Physics Letters (3 papers)Journal of Applied Physics (3 papers)
Partner nations: United States Sweden United Kingdom

In The Last Decade

J. Knall

34 papers receiving 1.1k citations

Peers

Countries citing papers authored by J. Knall

Since Specialization

Citations

This map shows the geographic impact of J. Knall's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Knall with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Knall more than expected).

Fields of papers citing papers by J. Knall

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Knall. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Knall. The network helps show where J. Knall may publish in the future.

Co-authorship network

The 25 scholars most cited alongside J. Knall, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Knall Line = papers co-authored together J. Knall links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	3D TFT-SONOS memory cell for ultra-high density file storage applications Andrew J. Walker,Asmaa AlSaeed,R. M. Gould,Erni Purnamasari,S. B. Herner,Michael Clark,E. Castillo Elías,Rachael B. Pollina,Maryanne Harlow,Trishant Limbu,俊二山本,J. Knall,J. R. Person,Dengler La,Sara Ben Nefissa,DePuey Eg,D. L. Fassnacht,E. Kaouech	2004	37
2	The use of graded InGaAs layers and patterned substrates to remove threading dislocations from GaAs on Si Journal of Applied Physics ·J. Knall,Lucia Romano,D. K. Biegelsen,R. D. Bringans,H. C. Chui,J. S. Harris,D.W. Treat,D. P. Bour	1994	18
3	Atomic rearrangement at the interface of annealed ZnSe films grown on vicinal Si(001) substrates Physical review. B, Condensed matter ·Lucia Romano,R. D. Bringans,J. Knall,D. K. Biegelsen,Alberto Garcı́a,John E. Northrup,M. A. O’Keefe	1994	11
4	An STM study of the chemisorption of C2H4 on Si(001)(2×1) Surface Science Letters ·Andrew J. Mayne,A. R. Avery,J. Knall,T. S. Jones,G. Andrew D. Briggs,W. H. Weinberg	1993	73
5	An STM study of the Si(001)-(21) and GaAs(001)-(24) surfaces Nanotechnology ·G. A. D. Briggs,J. Knall,Andrew J. Mayne,T. S. Jones,W. H. Weinberg,A. R. Avery	1992	16
6	Quantitative voltage-dependent STM image simulations for semiconductors Ultramicroscopy ·J.H. Wilson,Henk Linnebank,J. Knall,A. P. Sutton,J. B. Pethica	1992	19
7	Chemisorption of organic adsorbates on silicon and gold studied by scanning tunnelling microscopy Faraday Discussions ·Andrew J. Mayne,Tommaso R. I. Cataldi,J. Knall,A. R. Avery,T. S. Jones,Lidriana de Souza Pinheiro,H. Allen O. Hill,G. A. D. Briggs,J. B. Pethica,W. H. Weinberg	1992	23
8	Reconstruction of Si(113) by adsorption of atomic hydrogen Journal of Physics Condensed Matter ·J.H. Wilson,方黑虎,J. B. Pethica,J. Knall	1991	15
9	STM imaging of molecules on well defined substrates Journal of Physics Condensed Matter ·R. Droin,J. Knall,T. Richardson,G.G. Roberts,J. B. Pethica	1991	3
10	Structure of Si(113) determined by scanning tunneling microscopy Physical Review Letters ·J. Knall,J. B. Pethica,J. D. Todd,J.H. Wilson	1991	112
11	Incorporation of In by recoil implantation during MBE growth of Si(100) Surface Science Letters ·J. Knall,J.‐E. Sundgren,L. C. Markert,J. E. Greene	1989	7
12	Novel transport phenomena in Si/Si_1-xGe_x/Si double-heterojunction bipolar transistors Semiconductor Science and Technology ·Yoshiro Nagaki,Dan‐Xia Xu,M. Willander,J. Knall,M. Arif Hasan,G. V. Hansson	1989	3
13	Kinetics of dopant incorporation using a low-energy antimony ion beam during growth of Si(100) films by molecular-beam epitaxy Physical review. B, Condensed matter ·W.-X. Ni,J. Knall,M. Arif Hasan,G. V. Hansson,J.‐E. Sundgren,Scott A. Barnett,L. C. Markert,J. E. Greene	1989	55
14	Adsorption and desorption kinetics of In on Si(100) Surface Science ·J. Knall,Scott A. Barnett,J.‐E. Sundgren,J. E. Greene	1989	34
15	Incorporation of accelerated low-energy (50–500 eV) In+ ions in Si(100) films during growth by molecular-beam epitaxy Journal of Applied Physics ·M. Arif Hasan,J. Knall,Scott A. Barnett,J.‐E. Sundgren,L. C. Markert,Angus Rockett,J. E. Greene	1989	58
16	Electrical properties of Si(100) films doped with low-energy (≤150 eV) Sb ions during growth by molecular beam epitaxy Applied Physics Letters ·Paul Fons,N. Hirashita,L. C. Markert,Y.-W. Kim,J. E. Greene,W.-X. Ni,J. Knall,G. V. Hansson,J.‐E. Sundgren	1988	26
17	Carrier lifetime in MBE grown Si:Sb and Si:In layers measured by the transient grating method Semiconductor Science and Technology ·Céline Brassart-Olsen,M. Willander,Breanne Lawler,Vivien Mácsay,J. Knall,W.-X. Ni	1988	7
18	New method to study band offsets applied to strainedSi/Si1−xGex(100)heterojunction interfaces Physical review. B, Condensed matter ·W.-X. Ni,J. Knall,G. V. Hansson	1987	38
19	Dopant depth distributions as a function of growth temperature in In-doped (100)Si grown by molecular beam epitaxy Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Angus Rockett,Scott A. Barnett,J. E. Greene,J. Knall,J.‐E. Sundgren	1985	16
20	Indium incorporation during the growth of (100)Si by molecular beam epitaxy: Surface segregation and reconstruction Applied Physics Letters ·J. Knall,J.‐E. Sundgren,J. E. Greene,Angus Rockett,Scott A. Barnett	1984	38

About J. Knall

J. Knall is a scholar working on Structural Biology, Surfaces, Coatings and Films, Atomic and Molecular Physics, and Optics, Computational Mechanics and Electrical and Electronic Engineering, having authored 34 papers that have together received 1.1k indexed citations. Recurring topics across this work include Silicon and Solar Cell Technologies (11 papers), Semiconductor materials and interfaces (10 papers), Ion-surface interactions and analysis (9 papers), Integrated Circuits and Semiconductor Failure Analysis (9 papers), Semiconductor materials and devices (9 papers), Surface and Thin Film Phenomena (8 papers), Force Microscopy Techniques and Applications (6 papers) and Electron and X-Ray Spectroscopy Techniques (5 papers). The work is most often cited by research in Surfaces, Coatings and Films (191 citations), Atomic and Molecular Physics, and Optics (728 citations), Structural Biology (25 citations), Electrical and Electronic Engineering (710 citations) and Computational Mechanics (172 citations). J. Knall has collaborated with scholars based in United States, Sweden and United Kingdom. Frequent co-authors include J. B. Pethica, J.‐E. Sundgren, G. V. Hansson, J. E. Greene, Scott A. Barnett, W. H. Weinberg, J.H. Wilson, Andrew J. Mayne, T. S. Jones and A. R. Avery. Their work appears in journals such as Surface Science, Applied Physics Letters, Journal of Applied Physics, Physical review. B, Condensed matter and Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

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