J. Knall

1.3k total citations
34 papers, 1.1k citations indexed

About

J. Knall is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Mechanics. According to data from OpenAlex, J. Knall has authored 34 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Electrical and Electronic Engineering, 21 papers in Atomic and Molecular Physics, and Optics and 9 papers in Computational Mechanics. Recurrent topics in J. Knall's work include Silicon and Solar Cell Technologies (11 papers), Semiconductor materials and interfaces (10 papers) and Ion-surface interactions and analysis (9 papers). J. Knall is often cited by papers focused on Silicon and Solar Cell Technologies (11 papers), Semiconductor materials and interfaces (10 papers) and Ion-surface interactions and analysis (9 papers). J. Knall collaborates with scholars based in United States, Sweden and United Kingdom. J. Knall's co-authors include J. B. Pethica, J.‐E. Sundgren, G. V. Hansson, J. E. Greene, Scott A. Barnett, W. H. Weinberg, J.H. Wilson, Andrew J. Mayne, T. S. Jones and A. R. Avery and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

J. Knall

34 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Knall United States 18 728 710 264 191 175 34 1.1k
Tsunenori Sakamoto Poland 19 778 1.1× 603 0.8× 274 1.0× 222 1.2× 120 0.7× 44 1.0k
Masamichi Naitoh Japan 17 449 0.6× 304 0.4× 282 1.1× 139 0.7× 79 0.5× 66 739
S. Kohmoto Japan 17 747 1.0× 511 0.7× 286 1.1× 154 0.8× 201 1.1× 49 958
Shigeyuki Hosoki Japan 17 590 0.8× 300 0.4× 264 1.0× 70 0.4× 309 1.8× 50 854
Tetsuro Hanawa Japan 14 311 0.4× 276 0.4× 117 0.4× 165 0.9× 189 1.1× 54 684
I. M. Vitomirov United States 18 680 0.9× 411 0.6× 216 0.8× 384 2.0× 129 0.7× 51 935
Shozo Kono Japan 17 392 0.5× 265 0.4× 351 1.3× 168 0.9× 65 0.4× 55 714
T.J. Bullough United Kingdom 16 405 0.6× 399 0.6× 234 0.9× 58 0.3× 97 0.6× 66 677
M. H. Bakshi United States 13 307 0.4× 473 0.7× 194 0.7× 355 1.9× 77 0.4× 24 718
G.M. Guichar France 17 474 0.7× 277 0.4× 149 0.6× 306 1.6× 110 0.6× 23 667

Countries citing papers authored by J. Knall

Since Specialization
Citations

This map shows the geographic impact of J. Knall's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Knall with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Knall more than expected).

Fields of papers citing papers by J. Knall

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Knall. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Knall. The network helps show where J. Knall may publish in the future.

Co-authorship network of co-authors of J. Knall

This figure shows the co-authorship network connecting the top 25 collaborators of J. Knall. A scholar is included among the top collaborators of J. Knall based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Knall. J. Knall is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Walker, Andrew J., et al.. (2004). 3D TFT-SONOS memory cell for ultra-high density file storage applications. 29–30. 37 indexed citations
2.
Knall, J., Lucia Romano, D. K. Biegelsen, et al.. (1994). The use of graded InGaAs layers and patterned substrates to remove threading dislocations from GaAs on Si. Journal of Applied Physics. 76(5). 2697–2702. 18 indexed citations
3.
Romano, Lucia, R. D. Bringans, J. Knall, et al.. (1994). Atomic rearrangement at the interface of annealed ZnSe films grown on vicinal Si(001) substrates. Physical review. B, Condensed matter. 50(7). 4416–4423. 11 indexed citations
4.
Mayne, Andrew J., A. R. Avery, J. Knall, et al.. (1993). An STM study of the chemisorption of C2H4 on Si(001)(2×1). Surface Science Letters. 284(1-2). A285–A285. 73 indexed citations
5.
Briggs, G. A. D., J. Knall, Andrew J. Mayne, et al.. (1992). An STM study of the Si(001)-(2*1) and GaAs(001)-(2*4) surfaces. Nanotechnology. 3(3). 113–122. 16 indexed citations
6.
Wilson, J.H., et al.. (1992). Quantitative voltage-dependent STM image simulations for semiconductors. Ultramicroscopy. 42-44. 801–808. 19 indexed citations
7.
Mayne, Andrew J., Tommaso R. I. Cataldi, J. Knall, et al.. (1992). Chemisorption of organic adsorbates on silicon and gold studied by scanning tunnelling microscopy. Faraday Discussions. 94. 199–199. 23 indexed citations
8.
Wilson, J.H., et al.. (1991). Reconstruction of Si(113) by adsorption of atomic hydrogen. Journal of Physics Condensed Matter. 3(S). S133–S138. 15 indexed citations
9.
Knall, J., et al.. (1991). STM imaging of molecules on well defined substrates. Journal of Physics Condensed Matter. 3(S). S11–S16. 3 indexed citations
10.
Knall, J., J. B. Pethica, J. D. Todd, & J.H. Wilson. (1991). Structure of Si(113) determined by scanning tunneling microscopy. Physical Review Letters. 66(13). 1733–1736. 112 indexed citations
11.
Knall, J., J.‐E. Sundgren, L. C. Markert, & J. E. Greene. (1989). Incorporation of In by recoil implantation during MBE growth of Si(100). Surface Science Letters. 214(1-2). A253–A253. 7 indexed citations
12.
Xu, Dan‐Xia, et al.. (1989). Novel transport phenomena in Si/Si1-xGex/Si double-heterojunction bipolar transistors. Semiconductor Science and Technology. 4(5). 370–375. 3 indexed citations
13.
Ni, W.-X., J. Knall, M. Arif Hasan, et al.. (1989). Kinetics of dopant incorporation using a low-energy antimony ion beam during growth of Si(100) films by molecular-beam epitaxy. Physical review. B, Condensed matter. 40(15). 10449–10459. 55 indexed citations
14.
Knall, J., Scott A. Barnett, J.‐E. Sundgren, & J. E. Greene. (1989). Adsorption and desorption kinetics of In on Si(100). Surface Science. 209(3). 314–334. 34 indexed citations
15.
Hasan, M. Arif, J. Knall, Scott A. Barnett, et al.. (1989). Incorporation of accelerated low-energy (50–500 eV) In+ ions in Si(100) films during growth by molecular-beam epitaxy. Journal of Applied Physics. 65(1). 172–179. 58 indexed citations
16.
Fons, Paul, N. Hirashita, L. C. Markert, et al.. (1988). Electrical properties of Si(100) films doped with low-energy (≤150 eV) Sb ions during growth by molecular beam epitaxy. Applied Physics Letters. 53(18). 1732–1734. 26 indexed citations
17.
Willander, M., et al.. (1988). Carrier lifetime in MBE grown Si:Sb and Si:In layers measured by the transient grating method. Semiconductor Science and Technology. 3(11). 1116–1121. 7 indexed citations
18.
Ni, W.-X., J. Knall, & G. V. Hansson. (1987). New method to study band offsets applied to strainedSi/Si1−xGex(100)heterojunction interfaces. Physical review. B, Condensed matter. 36(14). 7744–7747. 38 indexed citations
19.
Rockett, Angus, Scott A. Barnett, J. E. Greene, J. Knall, & J.‐E. Sundgren. (1985). Dopant depth distributions as a function of growth temperature in In-doped (100)Si grown by molecular beam epitaxy. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 3(3). 855–859. 16 indexed citations
20.
Knall, J., J.‐E. Sundgren, J. E. Greene, Angus Rockett, & Scott A. Barnett. (1984). Indium incorporation during the growth of (100)Si by molecular beam epitaxy: Surface segregation and reconstruction. Applied Physics Letters. 45(6). 689–691. 38 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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