Kiyomi Naruke

641 total citations
16 papers, 396 citations indexed

About

Kiyomi Naruke is a scholar working on Electrical and Electronic Engineering, Computer Networks and Communications and Materials Chemistry. According to data from OpenAlex, Kiyomi Naruke has authored 16 papers receiving a total of 396 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Electrical and Electronic Engineering, 4 papers in Computer Networks and Communications and 4 papers in Materials Chemistry. Recurrent topics in Kiyomi Naruke's work include Semiconductor materials and devices (13 papers), Advancements in Semiconductor Devices and Circuit Design (7 papers) and Advanced Memory and Neural Computing (6 papers). Kiyomi Naruke is often cited by papers focused on Semiconductor materials and devices (13 papers), Advancements in Semiconductor Devices and Circuit Design (7 papers) and Advanced Memory and Neural Computing (6 papers). Kiyomi Naruke collaborates with scholars based in Japan and United States. Kiyomi Naruke's co-authors include S. Taguchi, Makoto Wada, Shigeru Yamada, H. Tango, Masahiro Yoshida, K. Maeguchi, Akira Umezawa, H. Banba, Toshihiro Suzuki and S. Atsumi and has published in prestigious journals such as Journal of Applied Physics, IEEE Journal of Solid-State Circuits and IEEE Transactions on Electron Devices.

In The Last Decade

Kiyomi Naruke

15 papers receiving 373 citations

Peers

Kiyomi Naruke
Min-Suk Suh South Korea
J. Witters Belgium
Josef Weber Germany
H. Itani Japan
Noah Sturcken United States
Kwang-Yoo Byun South Korea
Jie Xue United States
Kiyomi Naruke
Citations per year, relative to Kiyomi Naruke Kiyomi Naruke (= 1×) peers Hélène Lhermet

Countries citing papers authored by Kiyomi Naruke

Since Specialization
Citations

This map shows the geographic impact of Kiyomi Naruke's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Kiyomi Naruke with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Kiyomi Naruke more than expected).

Fields of papers citing papers by Kiyomi Naruke

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Kiyomi Naruke. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Kiyomi Naruke. The network helps show where Kiyomi Naruke may publish in the future.

Co-authorship network of co-authors of Kiyomi Naruke

This figure shows the co-authorship network connecting the top 25 collaborators of Kiyomi Naruke. A scholar is included among the top collaborators of Kiyomi Naruke based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Kiyomi Naruke. Kiyomi Naruke is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

16 of 16 papers shown
1.
Kondo, Masaki, et al.. (2006). Simulation of NOR-Flash Memory Cells Focusing on Narrow Channel Effects on VTH Dispersion. 127–130. 3 indexed citations
2.
Yoshikawa, K., Seiichi Mori, N. Arai, et al.. (2003). A 3.3 V operation nonvolatile memory cell technology. 40–41.
3.
Kuriyama, M., S. Atsumi, Akira Umezawa, et al.. (2003). A 5 V-only 0.6 mu m flash EEPROM with row decoder scheme in triple-well structure. 152–153,. 3 indexed citations
4.
Naruke, Kiyomi, et al.. (2003). A new flash-erase EEPROM cell with a sidewall select-gate on its source side. 603–606. 12 indexed citations
5.
Naruke, Kiyomi, S. Taguchi, & Makoto Wada. (2003). Stress induced leakage current limiting to scale down EEPROM tunnel oxide thickness. 424–427. 86 indexed citations
6.
Yamada, Shigeru, et al.. (2002). A self-convergence erasing scheme for a simple stacked gate flash EEPROM. 307–310. 22 indexed citations
7.
Tanzawa, Tôru, Akira Umezawa, H. Shiga, et al.. (2002). A 44-mm/sup 2/ four-bank eight-word page-read 64-Mb flash memory with flexible block redundancy and fast accurate word-line voltage controller. IEEE Journal of Solid-State Circuits. 37(11). 1485–1492. 2 indexed citations
8.
Yamada, Shigeru, Takeshi Yamane, Kenta Amemiya, & Kiyomi Naruke. (1996). A self-convergence erase for NOR flash EEPROM using avalanche hot carrier injection. IEEE Transactions on Electron Devices. 43(11). 1937–1941. 7 indexed citations
9.
Atsumi, S., M. Kuriyama, Akira Umezawa, et al.. (1994). A 16-Mb flash EEPROM with a new self-data-refresh scheme for a sector erase operation. IEEE Journal of Solid-State Circuits. 29(4). 461–469. 39 indexed citations
10.
Umezawa, Akira, S. Atsumi, M. Kuriyama, et al.. (1992). A 5-V-only operation 0.6- mu m flash EEPROM with row decoder scheme in triple-well structure. IEEE Journal of Solid-State Circuits. 27(11). 1540–1546. 108 indexed citations
11.
Yamada, Seiji, Kiyomi Naruke, & Masashi Wada. (1991). Modified Impact-Ionization Recombination Model under Dynamic Stress of Thin Oxide. 1 indexed citations
12.
Naruke, Kiyomi, et al.. (1990). The study of the thermal oxide films on silicon wafers by Fourier transform infrared attenuated total reflection spectroscopy. Journal of Applied Physics. 68(4). 1429–1434. 31 indexed citations
13.
Hatano, Koji, et al.. (1984). CMOS Shift Register Circuits for Radiation-Tolerant VLSI's. IEEE Transactions on Nuclear Science. 31(5). 1034–1038. 8 indexed citations
14.
Ishiwara, Hiroshi, Kiyomi Naruke, & Seijiro Furukawa. (1983). Low temperature annealing of B and P ions incorporated into deposited- and self-implanted amorphous Si. Nuclear Instruments and Methods in Physics Research. 209-210. 689–693. 1 indexed citations
15.
Naruke, Kiyomi, Masahiro Yoshida, K. Maeguchi, & H. Tango. (1983). Radiation-Induced Interface States of Poly-Si Gate MOS Capacitors Using Low Temperature Gate Oxidation. IEEE Transactions on Nuclear Science. 30(6). 4054–4058. 71 indexed citations
16.
Ishiwara, Hiroshi, Kiyomi Naruke, & Seijiro Furukawa. (1982). Electrical Activation of B Ions Implanted in Deposited-Amorphous Si during Solid Phase Epitaxy. Japanese Journal of Applied Physics. 21(9A). L577–L577. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Rankless by CCL
2026