Kazuma Eto

1.4k citations

39 papers · 1.1k · h-index 13

Impact in

Condensed Matter Physics top 5%
- Advanced Condensed Matter Physics
Atomic and Molecular Physics, and Optics top 5%
- Topological Materials and Phenomena
- Quantum and electron transport phenomena
- Magnetic properties of thin films
- Quantum many-body systems

Papers in

Electrical and Electronic Engineering 29
- Silicon Carbide Semiconductor Technologies 29
- Semiconductor materials and devices 13
- Thin-Film Transistor Technologies 8
Atomic and Molecular Physics, and Optics 21
- Semiconductor materials and interfaces 12
- Topological Materials and Phenomena 9

Co-authors: Kouji Segawa (9 shared papers)Yoichi Ando (9 shared papers)T. Takahashi (5 shared papers)T. Sato (5 shared papers)S. Souma (5 shared papers)K. Nakayama (3 shared papers)A. A. Taskin (2 shared papers)K. Nomura (1 shared paper)
Journals: Japanese Journal of Applied Physics (8 papers)Journal of Crystal Growth (7 papers)Physical Review Letters (5 papers)Physical Review B (3 papers)Applied Physics Express (3 papers)
Partner nations: Japan United States France

In The Last Decade

Kazuma Eto

39 papers receiving 1.1k citations

Peers

Countries citing papers authored by Kazuma Eto

Since Specialization

Citations

This map shows the geographic impact of Kazuma Eto's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Kazuma Eto with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Kazuma Eto more than expected).

Fields of papers citing papers by Kazuma Eto

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Kazuma Eto. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Kazuma Eto. The network helps show where Kazuma Eto may publish in the future.

Co-authors

The 25 scholars most cited alongside Kazuma Eto, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Kazuma Eto Line = papers co-authored together Kazuma Eto links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

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#	Work
1	Spin-Electricity Conversion Induced by Spin Injection into Topological Insulators Physical Review Letters ·Yuki Shiomi, K. Nomura, Y. Kajiwara, Kazuma Eto, Mario Novak, Kouji Segawa, Yoichi Ando, Eiji Saitoh	2014	270
2	Unexpected mass acquisition of Dirac fermions at the quantum phase transition of a topological insulator Nature Physics ·T. Sato, Kouji Segawa, Koji Kosaka, S. Souma, K. Nakayama, Kazuma Eto, T. Minami, Yoichi Ando, T. Takahashi	2011	171
3	Angular-dependent oscillations of the magnetoresistance inBi2Se3due to the three-dimensional bulk Fermi surface Physical Review B ·Kazuma Eto, Zhi Ren, A. A. Taskin, Kouji Segawa, Yoichi Ando	2010	165
4	Manipulation of Topological States and the Bulk Band Gap Using Natural Heterostructures of a Topological Insulator Physical Review Letters ·K. Nakayama, Kazuma Eto, Yukio Tanaka, T. Sato, S. Souma, T. Takahashi, Kouji Segawa, Yoichi Ando	2012	74
5	Topological Surface States in Lead-Based Ternary TelluridePb(Bi1−xSbx)2Te4 Physical Review Letters ·S. Souma, Kazuma Eto, Marcelo Ayumu Nomura, K. Nakayama, T. Sato, T. Takahashi, Kouji Segawa, Yoichi Ando	2012	59
6	Robust Protection from Backscattering in the Topological InsulatorBi1.5Sb0.5Te1.7Se1.3 Physical Review Letters ·Sunghun Kim, Shunsuke Yoshizawa, Y. Ishida, Kazuma Eto, Kouji Segawa, Yoichi Ando, Shik Shin, Fumio Komori	2014	54
7	Relationship between Fermi surface warping and out-of-plane spin polarization in topological insulators: A view from spin- and angle-resolved photoemission Physical Review B ·Marcelo Ayumu Nomura, S. Souma, A. Takayama, T. Sato, T. Takahashi, Kazuma Eto, Kouji Segawa, Yoichi Ando	2014	51
8	Spin Polarization of Gapped Dirac Surface States Near the Topological Phase Transition inTlBi(S1−xSex)2 Physical Review Letters ·S. Souma, Masashi Komatsu, M. A. Nomura, T. Sato, A. Takayama, T. Takahashi, Kazuma Eto, Kouji Segawa, Yoichi Ando	2012	32
9	Growth of P-type 4H–SiC single crystals by physical vapor transport using aluminum and nitrogen co-doping Journal of Crystal Growth ·Kazuma Eto, Hiromasa Suo, Tomohisa Kato, Hajime Okumura	2017	24
10	Reduction of threading screw dislocations in 4H-SiC crystals by a hybrid method with solution growth and physical vapor transport growth Journal of Crystal Growth ·Takeshi Mitani, Kazuma Eto, Naoyoshi Komatsu, Yuichiro Hayashi, Hiromasa Suo, Tomohisa Kato	2021	18
11	Hopping conduction range of heavily Al-doped 4H-SiC thick epilayers grown by CVD Applied Physics Express ·Shiyang Ji, Kazuma Eto, Sadafumi Yoshida, Kazutoshi Kojima, Yuuki Ishida, Shingo Saito, Hidekazu Tsuchida, Hajime Okumura	2015	14
12	Dependence of conduction mechanisms in heavily Al-doped 4H-SiC epilayers on Al concentration Applied Physics Express ·Hideharu Matsuura, Akinobu Takeshita, Tatsuya Imamura, Kota Takano, Kazuya Okuda, Atsuki Hidaka, Shiyang Ji, Kazuma Eto, Kazutoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura	2018	13
13	Evaluation of the increase in threading dislocation during the initial stage of physical vapor transport growth of 4H-SiC Japanese Journal of Applied Physics ·Hiromasa Suo, Susumu Tsukimoto, Kazuma Eto, Hiroshi Osawa, Tomohisa Kato, Hajime Okumura	2018	12
14	Transition of conduction mechanism from band to variable-range hopping conduction due to Al doping in heavily Al-doped 4H-SiC epilayers Japanese Journal of Applied Physics ·Hideharu Matsuura, Akinobu Takeshita, Tatsuya Imamura, Kota Takano, Kazuya Okuda, Atsuki Hidaka, Shiyang Ji, Kazuma Eto, Kazutoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura	2019	11
15	Difference of double Shockley-type stacking faults expansion in highly nitrogen-doped and nitrogen-boron co-doped n-type 4H-SiC crystals Journal of Crystal Growth ·Hiromasa Suo, Kazuma Eto, T. Ise, Yuichiro Tokuda, Hiroshi Osawa, Hidekazu Tsuchida, Tomohisa Kato, Hajime Okumura	2016	11
16	Massive reduction of threading screw dislocations in 4H-SiC crystals grown by a hybrid method combined with solution growth and physical vapor transport growth on higher off-angle substrates Applied Physics Express ·Takeshi Mitani, Kazuma Eto, Kenji Momose, Tomohisa Kato	2021	10
17	Photoluminescence wavelength from stacking fault with complicated structure in 4H-SiC epitaxial layer Japanese Journal of Applied Physics ·Hiromasa Suo, Tamotsu Yamashita, Kazuma Eto, Akira Miyasaka, Hiroshi Osawa, Tomohisa Kato, Hajime Okumura	2022	9
18	Growth of Low Resistivity n-Type 4H-SiC Bulk Crystals by Sublimation Method Using Co-Doping Technique Materials science forum ·Tomohisa Kato, Kazuma Eto, Satoru Takagi, Tomonori Miura, Yasushi Urakami, Hiroyuki Kondo, Fusao Hirose, Hajime Okumura	2014	9
19	Observation of multilayer Shockley-type stacking fault formation during process of epitaxial growth on highly nitrogen-doped 4H-SiC substrate Japanese Journal of Applied Physics ·Hiromasa Suo, Tamotsu Yamashita, Kazuma Eto, Hiroshi Osawa, Tomohisa Kato, Hajime Okumura	2019	8
20	Comparison of Conduction Mechanisms in Heavily Al-Doped 4H-SiC and Heavily Al- and N-Codoped 4H-SiC Materials science forum ·Hideharu Matsuura, Akinobu Takeshita, Tatsuya Imamura, Kota Takano, Kazuya Okuda, Atsuki Hidaka, Shiyang Ji, Kazuma Eto, Kazutoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura	2018	8

About Kazuma Eto

Kazuma Eto is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Materials Chemistry and Condensed Matter Physics, having authored 39 papers that have together received 1.1k indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (29 papers), Semiconductor materials and devices (13 papers), Semiconductor materials and interfaces (12 papers), Topological Materials and Phenomena (9 papers), Thin-Film Transistor Technologies (8 papers), Copper Interconnects and Reliability (6 papers), Advanced Condensed Matter Physics (6 papers) and Advanced ceramic materials synthesis (5 papers). The work is most often cited by research in Condensed Matter Physics (354 citations), Atomic and Molecular Physics, and Optics (894 citations), Materials Chemistry (665 citations), Electronic, Optical and Magnetic Materials (105 citations) and Electrical and Electronic Engineering (251 citations). Kazuma Eto has collaborated with scholars based in Japan, United States and France. Frequent co-authors include Kouji Segawa, Yoichi Ando, T. Takahashi, T. Sato, S. Souma, K. Nakayama, A. A. Taskin, K. Nomura, Y. Kajiwara and Eiji Saitoh. Their work appears in journals such as Japanese Journal of Applied Physics, Journal of Crystal Growth, Physical Review Letters, Physical Review B and Applied Physics Express.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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