K. C. Hwang

487 total citations
20 papers, 390 citations indexed

About

K. C. Hwang is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, K. C. Hwang has authored 20 papers receiving a total of 390 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 15 papers in Atomic and Molecular Physics, and Optics and 10 papers in Condensed Matter Physics. Recurrent topics in K. C. Hwang's work include Semiconductor Quantum Structures and Devices (14 papers), Radio Frequency Integrated Circuit Design (13 papers) and GaN-based semiconductor devices and materials (10 papers). K. C. Hwang is often cited by papers focused on Semiconductor Quantum Structures and Devices (14 papers), Radio Frequency Integrated Circuit Design (13 papers) and GaN-based semiconductor devices and materials (10 papers). K. C. Hwang collaborates with scholars based in United States, Taiwan and India. K. C. Hwang's co-authors include Andrew S. Brown, Ken Brown, James Chen, P.C. Chao, K. B. Nichols, D.-W. Tu, P. Ho, J. M. Ballingall, G.L. Patton and S. Williamson and has published in prestigious journals such as Applied Physics Letters, IEEE Journal of Solid-State Circuits and IEEE Electron Device Letters.

In The Last Decade

K. C. Hwang

19 papers receiving 358 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
K. C. Hwang United States	11	363	173	119	27	25	20	390
M. Nishimoto United States	14	460 1.3×	214 1.2×	59 0.5×	95 3.5×	26 1.0×	52	501
R. Lin United States	11	299 0.8×	76 0.4×	65 0.5×	115 4.3×	29 1.2×	37	335
R. Lai United States	12	535 1.5×	230 1.3×	76 0.6×	158 5.9×	31 1.2×	37	579
J.M. Schellenberg United States	16	639 1.8×	172 1.0×	172 1.4×	69 2.6×	25 1.0×	51	675
P. Heymann Germany	11	361 1.0×	122 0.7×	48 0.4×	19 0.7×	38 1.5×	49	387
P.H. Liu United States	15	598 1.6×	290 1.7×	73 0.6×	164 6.1×	33 1.3×	29	632
Hsiao-Mei Cho United States	9	142 0.4×	62 0.4×	75 0.6×	157 5.8×	35 1.4×	18	267
Petra Rowell United States	20	1.0k 2.8×	269 1.6×	129 1.1×	146 5.4×	50 2.0×	63	1.0k
J. Lee United States	9	432 1.2×	195 1.1×	49 0.4×	126 4.7×	31 1.2×	15	457
B. Gorospe United States	12	494 1.4×	167 1.0×	43 0.4×	141 5.2×	39 1.6×	20	529

Countries citing papers authored by K. C. Hwang

Since Specialization

Citations

This map shows the geographic impact of K. C. Hwang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. C. Hwang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. C. Hwang more than expected).

Fields of papers citing papers by K. C. Hwang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. C. Hwang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. C. Hwang. The network helps show where K. C. Hwang may publish in the future.

Co-authorship network of co-authors of K. C. Hwang

This figure shows the co-authorship network connecting the top 25 collaborators of K. C. Hwang. A scholar is included among the top collaborators of K. C. Hwang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K. C. Hwang. K. C. Hwang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Lardizabal, S.M., et al.. (2016). Wideband W-Band GAN LNA MMIC with State-of-the-Art Noise Figure. 1–4. 20 indexed citations

Brown, Ken, et al.. (2016). 7kW GaN W-band transmitter. 1–3. 23 indexed citations

Brown, Andrew S., et al.. (2012). High power, high efficiency E-band GaN amplifier MMICs. 1–4. 38 indexed citations

Brown, Andrew S., et al.. (2011). W-band GaN power amplifier MMICs. 2011 IEEE MTT-S International Microwave Symposium. 1–4. 81 indexed citations

Brown, Andrew S., et al.. (2011). W-band GaN power amplifier MMICs. 2011 IEEE MTT-S International Microwave Symposium. 1–1. 67 indexed citations

Hwang, K. C., P.C. Chao, K. B. Nichols, et al.. (2002). An ultra-low DC power ultra-flat multi-octave MHEMT LNA MMIC. 147–150. 4 indexed citations

Hwang, K. C., A. R. Reisinger, K.H.G. Duh, et al.. (2002). A reliable ECR passivation technique on the 0.1 μm InAlAs/InGaAs HEMT device. 31. 624–627. 4 indexed citations

Whelan, C.S., P.F. Marsh, R.E. Leoni, et al.. (2002). Metamorphic PIN photodiodes for the 40 Gb/s fiber market. 251–254. 4 indexed citations

Hwang, K. C., et al.. (2002). W-band high power passivated 0.15 μm InAlAs/InGaAs HEMT device. 18–20. 1 indexed citations

10.

Ho, Pin, et al.. (2002). 60 GHz power performance of 0.1 μm gate-length InAlAs/InGaAs HEMTs. 411–414. 5 indexed citations

11.

Chao, P.C., et al.. (2000). Design and fabrication of a wideband 56- to 63-GHz monolithic power amplifier with very high power-added efficiency. IEEE Journal of Solid-State Circuits. 35(9). 1298–1306. 10 indexed citations

12.

Hwang, K. C., et al.. (2000). High performance fully selective double recess InAlAs/InGaAs/InP HEMTs. IEEE Electron Device Letters. 21(7). 335–337. 14 indexed citations

13.

Hwang, K. C., et al.. (1999). Very high gain millimeter-wave InAlAs/InGaAs/GaAs metamorphic HEMT's. IEEE Electron Device Letters. 20(11). 551–553. 45 indexed citations

14.

Tu, D.-W., et al.. (1999). High-performance double-recessed InAlAs/InGaAs power metamorphic HEMT on GaAs substrate. IEEE Microwave and Guided Wave Letters. 9(11). 458–460. 23 indexed citations

15.

Hwang, K. C., et al.. (1995). A high-current-gain, high-speed P-n-p AlGaAs/InGaAs/GaAs collector-up heterojunction bipolar transistor. Applied Physics Letters. 67(6). 837–839. 3 indexed citations

16.

Gupta, Sandeep, J.F. Whitaker, S. Williamson, et al.. (1993). High-speed photodetector applications of GaAs and InxGa1−xAs/GaAs grown by low-temperature molecular beam epitaxy. Journal of Electronic Materials. 22(12). 1449–1455. 14 indexed citations

17.

Ballingall, J. M., P. Ho, John Mazurowski, et al.. (1993). InxGa1−xAs (x=0.25–0.35) grown at low temperature. Journal of Electronic Materials. 22(12). 1471–1475. 3 indexed citations

18.

Hwang, K. C., et al.. (1993). Effect of gate structures on noise characteristics of 0.15 μm AlGaAs/InGaAs pseudomorphic HEMTs. Electronics Letters. 29(12). 1116–1117.

19.

Lester, L. F., K. C. Hwang, P. Ho, et al.. (1993). Ultrafast long-wavelength photodetectors fabricated on low-temperature InGaAs on GaAs. IEEE Photonics Technology Letters. 5(5). 511–514. 27 indexed citations

20.

Ho, Pin, Ming-Yih Kao, P.C. Chao, et al.. (1992). Materials and Device Characteristics of InAlAs/InGaAs HEMTs. MRS Proceedings. 281. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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