Dong-jun Seong

1.0k total citations
25 papers, 896 citations indexed

About

Dong-jun Seong is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Polymers and Plastics. According to data from OpenAlex, Dong-jun Seong has authored 25 papers receiving a total of 896 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 10 papers in Materials Chemistry and 7 papers in Polymers and Plastics. Recurrent topics in Dong-jun Seong's work include Advanced Memory and Neural Computing (22 papers), Ferroelectric and Negative Capacitance Devices (12 papers) and Semiconductor materials and devices (9 papers). Dong-jun Seong is often cited by papers focused on Advanced Memory and Neural Computing (22 papers), Ferroelectric and Negative Capacitance Devices (12 papers) and Semiconductor materials and devices (9 papers). Dong-jun Seong collaborates with scholars based in South Korea and United States. Dong-jun Seong's co-authors include Dongsoo Lee, Hyunsang Hwang, Joonmyoung Lee, Jubong Park, Jaesik Yoon, Minseok Jo, Hyunsang Hwang, Hyejung Choi, Wootae Lee and Rui Dong and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and Nanotechnology.

In The Last Decade

Dong-jun Seong

25 papers receiving 878 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Dong-jun Seong South Korea 16 866 282 268 191 48 25 896
Sebastian Schmelzer Germany 8 609 0.7× 172 0.6× 144 0.5× 262 1.4× 69 1.4× 9 646
Burt Fowler United States 22 1.3k 1.4× 242 0.9× 301 1.1× 448 2.3× 76 1.6× 68 1.3k
Florian Lentz Germany 11 681 0.8× 165 0.6× 199 0.7× 271 1.4× 66 1.4× 28 765
Musarrat Hasan South Korea 13 501 0.6× 128 0.5× 210 0.8× 82 0.4× 27 0.6× 32 549
M. Aoki Japan 15 858 1.0× 226 0.8× 275 1.0× 99 0.5× 19 0.4× 43 953
Ximeng Guan United States 14 1.6k 1.9× 206 0.7× 453 1.7× 367 1.9× 87 1.8× 34 1.7k
Kate J. Norris United States 9 890 1.0× 209 0.7× 201 0.8× 326 1.7× 105 2.2× 36 961
Joonmyoung Lee South Korea 22 1.8k 2.1× 620 2.2× 457 1.7× 427 2.2× 91 1.9× 59 1.8k
Katharina Skaja Germany 12 992 1.1× 260 0.9× 293 1.1× 406 2.1× 86 1.8× 16 1.1k
Carsten Funck Germany 12 484 0.6× 135 0.5× 116 0.4× 162 0.8× 56 1.2× 22 508

Countries citing papers authored by Dong-jun Seong

Since Specialization
Citations

This map shows the geographic impact of Dong-jun Seong's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Dong-jun Seong with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Dong-jun Seong more than expected).

Fields of papers citing papers by Dong-jun Seong

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Dong-jun Seong. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Dong-jun Seong. The network helps show where Dong-jun Seong may publish in the future.

Co-authorship network of co-authors of Dong-jun Seong

This figure shows the co-authorship network connecting the top 25 collaborators of Dong-jun Seong. A scholar is included among the top collaborators of Dong-jun Seong based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Dong-jun Seong. Dong-jun Seong is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Seong, Dong-jun, et al.. (2023). Highly Reliable Ovonic Threshold Switch with TiN/GeTe/TiN Structure. Materials. 16(5). 2066–2066. 6 indexed citations
2.
Park, Seong-Geon, Min Kyu Yang, Hyunsu Ju, et al.. (2012). A non-linear ReRAM cell with sub-1μA ultralow operating current for high density vertical resistive memory (VRRAM). 20.8.1–20.8.4. 64 indexed citations
3.
Lee, Joonmyoung, Minseok Jo, Dong-jun Seong, Jungho Shin, & Hyunsang Hwang. (2011). Materials and process aspect of cross-point RRAM (invited). Microelectronic Engineering. 88(7). 1113–1118. 19 indexed citations
4.
Jo, Minseok, Dong-jun Seong, Seonghyun Kim, et al.. (2010). Novel cross-point resistive switching memory with self-formed schottky barrier. 53–54. 26 indexed citations
5.
Park, Jubong, Minseok Jo, El Mostafa Bourim, et al.. (2010). Investigation of State Stability of Low-Resistance State in Resistive Memory. IEEE Electron Device Letters. 31(5). 485–487. 53 indexed citations
6.
Choi, Hyejung, Heesoo Jung, Joonmyoung Lee, et al.. (2009). An electrically modifiable synapse array of resistive switching memory. Nanotechnology. 20(34). 345201–345201. 115 indexed citations
7.
Lee, Joonmyoung, El Mostafa Bourim, Jong‐Sook Lee, et al.. (2009). Analysis of interface switching for Nb doped SrTiO3 single crystal device using complex impedance spectroscopy. Current Applied Physics. 10(1). e68–e70. 7 indexed citations
8.
Yoon, Jaesik, Joonmyoung Lee, Hyejung Choi, et al.. (2009). Analysis of copper ion filaments and retention of dual-layered devices for resistance random access memory applications. Microelectronic Engineering. 86(7-9). 1929–1932. 16 indexed citations
9.
Lee, Joonmyoung, Hyejung Choi, Dong-jun Seong, et al.. (2009). The impact of Al interfacial layer on resistive switching of La0.7Sr0.3MnO3 for reliable ReRAM applications. Microelectronic Engineering. 86(7-9). 1933–1935. 10 indexed citations
10.
Jo, Minseok, Man Chang, Seonghyun Kim, et al.. (2009). Characteristics of Traps Induced by Hot Holes Under Negative-Bias Temperature Stress in a pMOSFET. IEEE Electron Device Letters. 30(11). 1194–1196. 1 indexed citations
11.
Seong, Dong-jun, Mostafa Afifi Hassan, Hyejung Choi, et al.. (2009). Resistive-Switching Characteristics of $\hbox{Al}/ \hbox{Pr}_{0.7}\hbox{Ca}_{0.3}\hbox{MnO}_{3}$ for Nonvolatile Memory Applications. IEEE Electron Device Letters. 30(9). 919–921. 55 indexed citations
12.
13.
Seong, Dong-jun, et al.. (2008). Understanding of the Switching Mechanism of a Pt/Ni-Doped SrTiO3 Junction via Current–Voltage and Capacitance–Voltage Measurements. Japanese Journal of Applied Physics. 47(12R). 8749–8749. 15 indexed citations
14.
Oh, Min‐Suk, et al.. (2008). Improvement of Characteristics of Ga-Doped ZnO Grown by Pulsed Laser Deposition Using Plasma-Enhanced Oxygen Radicals. Journal of The Electrochemical Society. 155(9). D599–D599. 29 indexed citations
15.
Choi, Hyejung, Jubong Park, Dongsoo Lee, et al.. (2008). Electrical and reliability characteristics of copper-doped carbon (CuC) based resistive switching devices for nonvolatile memory applications. Applied Physics Letters. 93(21). 29 indexed citations
16.
Lee, Dongsoo, et al.. (2007). Resistance switching of copper doped MoOx films for nonvolatile memory applications. Applied Physics Letters. 90(12). 133 indexed citations
17.
Seong, Dong-jun, Minseok Jo, Dongsoo Lee, & Hyunsang Hwang. (2007). HPHA Effect on Reversible Resistive Switching of Pt∕Nb-Doped SrTiO[sub 3] Schottky Junction for Nonvolatile Memory Application. Electrochemical and Solid-State Letters. 10(6). H168–H168. 95 indexed citations
18.
Lee, Dongsoo, Dae‐Kue Hwang, Man Chang, et al.. (2006). Resistance switching of Al doped ZnO for Non Volatile Memory applications. 90. 86–87. 6 indexed citations
19.
20.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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