J.F. Barbot

942 total citations
54 papers, 849 citations indexed

About

J.F. Barbot is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Materials Chemistry. According to data from OpenAlex, J.F. Barbot has authored 54 papers receiving a total of 849 indexed citations (citations by other indexed papers that have themselves been cited), including 47 papers in Electrical and Electronic Engineering, 20 papers in Computational Mechanics and 16 papers in Materials Chemistry. Recurrent topics in J.F. Barbot's work include Silicon and Solar Cell Technologies (29 papers), Ion-surface interactions and analysis (20 papers) and Silicon Carbide Semiconductor Technologies (16 papers). J.F. Barbot is often cited by papers focused on Silicon and Solar Cell Technologies (29 papers), Ion-surface interactions and analysis (20 papers) and Silicon Carbide Semiconductor Technologies (16 papers). J.F. Barbot collaborates with scholars based in France, Brazil and Sweden. J.F. Barbot's co-authors include M. F. Beaufort, A. Declémy, S. Leclerc, C. Tromas, Erwan Oliviero, S. Reboh, P.F.P. Fichtner, E. Ntsoenzok, Marie‐Laure David and C. Blanchard and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

J.F. Barbot

54 papers receiving 827 citations

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author						Papers	Cites
J.F. Barbot	631	355	283	168	123	54	849
D.P. Malta	600 1.0×	393 1.1×	71 0.3×	89 0.5×	113 0.9×	41	837
J. F. Barbot	589 0.9×	211 0.6×	65 0.2×	137 0.8×	60 0.5×	61	709
J. L. Démenet	432 0.7×	439 1.2×	177 0.6×	49 0.3×	223 1.8×	53	877
J. S. Custer	948 1.5×	593 1.7×	83 0.3×	364 2.2×	92 0.7×	45	1.1k
H. Siethoff	315 0.5×	473 1.3×	45 0.2×	100 0.6×	135 1.1×	68	743
J. B. Wallace	208 0.3×	154 0.4×	80 0.3×	121 0.7×	69 0.6×	30	416
M. F. C. Willemsen	429 0.7×	189 0.5×	44 0.2×	73 0.4×	139 1.1×	22	539
T. Höchbauer	502 0.8×	416 1.2×	26 0.1×	233 1.4×	176 1.4×	33	824
J. G. M. van Berkum	703 1.1×	375 1.1×	33 0.1×	166 1.0×	52 0.4×	45	963
J. Fontenille	464 0.7×	442 1.2×	34 0.1×	124 0.7×	63 0.5×	32	697

Countries citing papers authored by J.F. Barbot

Since Specialization

Citations

This map shows the geographic impact of J.F. Barbot's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.F. Barbot with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.F. Barbot more than expected).

Fields of papers citing papers by J.F. Barbot

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.F. Barbot. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.F. Barbot. The network helps show where J.F. Barbot may publish in the future.

Co-authorship network of co-authors of J.F. Barbot

This figure shows the co-authorship network connecting the top 25 collaborators of J.F. Barbot. A scholar is included among the top collaborators of J.F. Barbot based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.F. Barbot. J.F. Barbot is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Beaufort, M. F., et al.. (2022). Damage in Xe-implanted 4H-SiC under severe conditions. Journal of Nuclear Materials. 570. 153941–153941. 5 indexed citations

Declémy, A., et al.. (2019). Effect of temperature on Xe implantation-induced damage in 4H-SiC. Journal of Physics Conference Series. 1190(1). 12015–12015. 3 indexed citations

Audurier, V., et al.. (2018). Strain buildup in 4H-SiC implanted with noble gases at low dose. Materials Today Proceedings. 5(6). 14722–14731. 5 indexed citations

Texier, M., et al.. (2013). Structural disordering and extended defects produced by He-implantation in silicon carbide. Journal of Physics D Applied Physics. 46(48). 485105–485105. 9 indexed citations

Barbot, J.F., et al.. (2012). Epitaxial growth of Ti3SiC2 thin films with basal planes parallel or orthogonal to the surface on α-SiC. Applied Physics Letters. 101(2). 16 indexed citations

Reboh, S., M. F. Beaufort, J.F. Barbot, J. Grilhé, & P.F.P. Fichtner. (2008). Orientation of H platelets under local stress in Si. Applied Physics Letters. 93(2). 18 indexed citations

Leclerc, S., M. F. Beaufort, A. Declémy, & J.F. Barbot. (2008). Evolution of defects upon annealing in He-implanted 4H-SiC. Applied Physics Letters. 93(12). 71 indexed citations

Leclerc, S., A. Declémy, M. F. Beaufort, C. Tromas, & J.F. Barbot. (2005). Swelling of SiC under helium implantation. Journal of Applied Physics. 98(11). 93 indexed citations

Ma, Yue, R. Job, Yi Huang, et al.. (2004). Three-Layer Structure of Hydrogenated Czochralski Silicon. Journal of The Electrochemical Society. 151(9). G627–G627. 8 indexed citations

10.

Oliviero, Erwan, M. F. Beaufort, F. Pailloux, & J.F. Barbot. (2004). Damage formation in high energy helium implanted 4H-SiC. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 218. 391–395. 9 indexed citations

11.

Oliviero, Erwan, C. Tromas, F. Pailloux, et al.. (2003). Damage formation and recovery in temperature helium implanted 4H–SiC. Materials Science and Engineering B. 102(1-3). 289–292. 16 indexed citations

12.

Oliviero, Erwan, A. van Veen, A. V. Fëdorov, M. F. Beaufort, & J.F. Barbot. (2002). Helium implantation defects in SiC studied by thermal helium desorption spectrometry. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 186(1-4). 223–228. 30 indexed citations

13.

Oliviero, Erwan, Marie‐Laure David, M. F. Beaufort, et al.. (2002). Formation of bubbles by high dose He implantation in 4H–SiC. Journal of Applied Physics. 91(3). 1179–1186. 37 indexed citations

14.

Godey, S., E. Ntsoenzok, Thierry Sauvage, et al.. (2000). Helium desorption from cavities induced by high energy 3He and 4He implantation in silicon. Materials Science and Engineering B. 73(1-3). 54–59. 33 indexed citations

15.

Godey, S., Thierry Sauvage, E. Ntsoenzok, et al.. (2000). Cavities and dislocations induced in silicon by MeV He implantation. Journal of Applied Physics. 87(5). 2158–2161. 26 indexed citations

16.

Svensson, B. G., et al.. (1999). Residual defects in Cz-silicon after low dose self-implantation and annealing from 400°C to 800°C. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 147(1-4). 106–110. 3 indexed citations

17.

Godey, S., et al.. (1999). Effect of shallow donors induced by hydrogen on P+N junctions. Materials Science and Engineering B. 58(1-2). 108–112. 3 indexed citations

18.

Svensson, Bengt, et al.. (1999). Low temperature proximity gettering of platinum in proton irradiated silicon via interstitial cluster dissociation. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 147(1-4). 127–131. 6 indexed citations

19.

Barbot, J.F., et al.. (1995). Observation of deep levels associated with dislocations in n-type Hg0.3Cd0.7Te. Journal of Materials Science. 30(13). 3471–3474. 4 indexed citations

20.

Renault, P.-O., et al.. (1995). Properties of Dislocations in HgCdTe Crystals. Journal de Physique III. 5(9). 1383–1389. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact