J. Venturini

824 total citations
39 papers, 642 citations indexed

About

J. Venturini is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Materials Chemistry. According to data from OpenAlex, J. Venturini has authored 39 papers receiving a total of 642 indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Electrical and Electronic Engineering, 20 papers in Computational Mechanics and 9 papers in Materials Chemistry. Recurrent topics in J. Venturini's work include Silicon and Solar Cell Technologies (18 papers), Laser Material Processing Techniques (15 papers) and Integrated Circuits and Semiconductor Failure Analysis (14 papers). J. Venturini is often cited by papers focused on Silicon and Solar Cell Technologies (18 papers), Laser Material Processing Techniques (15 papers) and Integrated Circuits and Semiconductor Failure Analysis (14 papers). J. Venturini collaborates with scholars based in France, Italy and Poland. J. Venturini's co-authors include S. Debrus, M. May, J. Baran, H. Ratajczak, A. Pietraszko, J. Lafait, C. Sella, Miguel Hernández, Karim Huet and C. Laviron and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Materials Chemistry.

In The Last Decade

J. Venturini

38 papers receiving 607 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J. Venturini France	12	256	220	210	174	122	39	642
Phillip J. Brock United States	12	169 0.7×	495 2.3×	206 1.0×	170 1.0×	19 0.2×	35	657
Changshui Fang China	15	318 1.2×	203 0.9×	248 1.2×	114 0.7×	30 0.2×	58	554
Carl E. Larson United States	16	203 0.8×	570 2.6×	176 0.8×	297 1.7×	44 0.4×	51	841
И. М. Притула Ukraine	15	349 1.4×	67 0.3×	303 1.4×	156 0.9×	34 0.3×	66	578
Qingtian Gu China	12	265 1.0×	135 0.6×	190 0.9×	95 0.5×	32 0.3×	44	409
Chuanying Shen China	14	294 1.1×	153 0.7×	275 1.3×	108 0.6×	19 0.2×	38	474
I. G. Fuks Poland	16	399 1.6×	163 0.7×	374 1.8×	350 2.0×	11 0.1×	70	774
A. Deepthy India	12	288 1.1×	260 1.2×	538 2.6×	266 1.5×	21 0.2×	19	765
D. Guichaoua France	11	160 0.6×	97 0.4×	261 1.2×	172 1.0×	14 0.1×	23	409
Patrick W. DeHaven United States	12	84 0.3×	177 0.8×	131 0.6×	105 0.6×	14 0.1×	33	391

Countries citing papers authored by J. Venturini

Since Specialization

Citations

This map shows the geographic impact of J. Venturini's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Venturini with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Venturini more than expected).

Fields of papers citing papers by J. Venturini

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Venturini. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Venturini. The network helps show where J. Venturini may publish in the future.

Co-authorship network of co-authors of J. Venturini

This figure shows the co-authorship network connecting the top 25 collaborators of J. Venturini. A scholar is included among the top collaborators of J. Venturini based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Venturini. J. Venturini is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Venturini, J., Abhijit Chakraborty, Mehmet A. Baysal, & Apostolia M. Tsimberidou. (2025). Developments in nanotechnology approaches for the treatment of solid tumors. Experimental Hematology and Oncology. 14(1). 76–76. 18 indexed citations

Venturini, J.. (2012). Laser Thermal Annealing: Enabling ultra-low thermal budget processes for 3D junctions formation and devices. 57–62. 9 indexed citations

Huet, Karim, et al.. (2012). Modeling boron profiles in silicon after pulsed excimer laser annealing. AIP conference proceedings. 241–244. 11 indexed citations

Fisicaro, Giuseppe, M. Italia, V. Privitera, et al.. (2011). Solid phase phosphorous activation in implanted silicon by excimer laser irradiation. Journal of Applied Physics. 109(11). 8 indexed citations

Fisicaro, Giuseppe, M. Italia, V. Privitera, et al.. (2010). Dopant activation and damage evolution in implanted silicon after excimer laser annealing. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 8(3). 940–943. 7 indexed citations

Marty, M., R. Beneyton, J. Venturini, et al.. (2009). Activation of shallow B and BF<inf>2</inf> implants in Si using Excimer laser annealing. 386–389. 2 indexed citations

Mazzocchi, V., M. Py, C. Boniface, et al.. (2009). Boron and Phosphorus dopant activation in Germanium using laser annealing with and without preamorphization implant. 48. 1–5. 9 indexed citations

Lippert, Thomas, et al.. (2007). Laser Induced Backside Wet Etching: Mechanisms and Fabrication of Micro-Optical Elements. Journal of Physics Conference Series. 59. 526–532. 24 indexed citations

Halimaoui, A., et al.. (2007). Investigation of Excimer Laser Annealing of Si using Photoluminescence at Room Temperature. 275–279. 5 indexed citations

10.

Venturini, J.. (2006). Long Pulse Laser Thermal Processing: Annealing Duration Trade-off for Next Generation Semiconductors Hot Processes. 669. 111–117. 2 indexed citations

11.

Borland, John, W. Krull, D. C. Jacobson, et al.. (2006). 45nm Node p+ USJ Formation With High Dopant Activation And Low Damage. 4–9. 7 indexed citations

12.

Venturini, J., Miguel Hernández, Karim Huet, et al.. (2005). Integration of a long pulse laser thermal process for ultra shallow junction formation of CMOS devices. SPIRE - Sciences Po Institutional REpository. 73–78. 3 indexed citations

13.

Sarnet, T., Nourdin Yaakoubi, Alain Bosseboeuf, et al.. (2005). Laser doping for microelectronics and microtechnology. Applied Surface Science. 247(1-4). 537–544. 12 indexed citations

14.

Defranoux, Christophe, J. Venturini, Pierre Boher, et al.. (2004). Infrared spectroscopic ellipsometry applied to the characterization of ultra shallow junction on silicon and SOI. Thin Solid Films. 455-456. 150–156. 4 indexed citations

15.

Latajka, Zdzisław, Grzegorz Gajewski, H. Ratajczak, & J. Venturini. (2003). Hyperpolarizalities of pyridine derivatives and their protonated species: ab initio studies. 51(1). 1–4. 2 indexed citations

16.

Hernández, Miguel, C. Laviron, T. Sarnet, et al.. (2003). Optical characterization of laser processed ultra-shallow junctions. Applied Surface Science. 208-209. 277–284. 23 indexed citations

17.

Hernández, Miguel, J. Venturini, J. Boulmer, et al.. (2003). Laser thermal processing for ultra shallow junction formation: numerical simulation and comparison with experiments. Applied Surface Science. 208-209. 345–351. 30 indexed citations

18.

Venturini, J., E. Koudoumas, Stelios Couris, et al.. (2002). Optical limiting and nonlinear optical absorption properties of C60–polystyrene star polymer films: C60 concentration dependence. Journal of Materials Chemistry. 12(7). 2071–2076. 61 indexed citations

19.

Ratajczak, H., J. Baran, S. Debrus, et al.. (2000). New hydrogen-bonded molecular crystals with nonlinear second-order optical properties. Journal of Molecular Structure. 555(1-3). 149–158. 55 indexed citations

20.

May, M., S. Debrus, J. Venturini, J. Baran, & H. Ratajczak. (1998). Phase matching second harmonic generation at 0.8716 μm in a Na2SeO4·H2SeO3·H2O crystal. Journal of Molecular Structure. 450(1-3). 79–87. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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