J. Noguchi

780 total citations
43 papers, 583 citations indexed

About

J. Noguchi is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Biomedical Engineering. According to data from OpenAlex, J. Noguchi has authored 43 papers receiving a total of 583 indexed citations (citations by other indexed papers that have themselves been cited), including 38 papers in Electrical and Electronic Engineering, 32 papers in Electronic, Optical and Magnetic Materials and 12 papers in Biomedical Engineering. Recurrent topics in J. Noguchi's work include Copper Interconnects and Reliability (32 papers), Semiconductor materials and devices (31 papers) and Advanced Surface Polishing Techniques (10 papers). J. Noguchi is often cited by papers focused on Copper Interconnects and Reliability (32 papers), Semiconductor materials and devices (31 papers) and Advanced Surface Polishing Techniques (10 papers). J. Noguchi collaborates with scholars based in Japan, United States and Israel. J. Noguchi's co-authors include N. Konishi, K. Hinode, N. Ohashi, Hiroshi Yamaguchi, Ken’ichi Takeda, Makoto Kimura, Yoshimitsu Kakuta, Y. Yamada, Toshiro Omori and N. Owada and has published in prestigious journals such as Journal of The Electrochemical Society, Biochemical and Biophysical Research Communications and IEEE Transactions on Electron Devices.

In The Last Decade

J. Noguchi

41 papers receiving 557 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J. Noguchi Japan	16	457	302	146	64	57	43	583
Mahbub Akhter Ireland	13	170 0.4×	49 0.2×	99 0.7×	49 0.8×	62 1.1×	24	389
Bo Jia China	15	257 0.6×	73 0.2×	99 0.7×	29 0.5×	162 2.8×	60	520
S.K. Samanta India	14	305 0.7×	54 0.2×	51 0.3×	17 0.3×	187 3.3×	35	398
Boyu Dong China	12	209 0.5×	34 0.1×	161 1.1×	7 0.1×	48 0.8×	61	410
Ji‐Hoon Kang South Korea	12	275 0.6×	42 0.1×	103 0.7×	33 0.5×	273 4.8×	44	515
Zihan Xu China	12	130 0.3×	26 0.1×	136 0.9×	7 0.1×	75 1.3×	32	420
Shiro Hino Japan	13	444 1.0×	58 0.2×	10 0.1×	52 0.8×	37 0.6×	36	528

Countries citing papers authored by J. Noguchi

Since Specialization

Citations

This map shows the geographic impact of J. Noguchi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Noguchi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Noguchi more than expected).

Fields of papers citing papers by J. Noguchi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Noguchi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Noguchi. The network helps show where J. Noguchi may publish in the future.

Co-authorship network of co-authors of J. Noguchi

This figure shows the co-authorship network connecting the top 25 collaborators of J. Noguchi. A scholar is included among the top collaborators of J. Noguchi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Noguchi. J. Noguchi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Miyoshi, Tomoyuki, et al.. (2015). Technologies for suppressing charge-traps in novel p-channel Field-MOSFET with thick gate oxide. Japanese Journal of Applied Physics. 54(5). 54102–54102. 1 indexed citations

Miyoshi, Tomoyuki, et al.. (2013). Reliability improvement in field-MOS FETs with thick gate oxide for 300-V applications. 81. 393–396. 6 indexed citations

Noguchi, J., et al.. (2012). Crystal structure of the rice branching enzyme I (BEI) in complex with maltopentaose. Biochemical and Biophysical Research Communications. 424(3). 508–511. 31 indexed citations

Noguchi, J., et al.. (2011). Crystal structure of the branching enzyme I (BEI) fromOryza sativaL. Acta Crystallographica Section A Foundations of Crystallography. 67(a1). C777–C778. 1 indexed citations

Noguchi, J., Hiroaki Shimada, Takashi Nakashima, et al.. (2011). Crystal structure of the branching enzyme I (BEI) from Oryza sativa L with implications for catalysis and substrate binding. Glycobiology. 21(8). 1108–1116. 44 indexed citations

Sakano, J., et al.. (2010). Large current capability 270V lateral IGBT with multi-emitter. 83–86. 25 indexed citations

Yamada, Yohei, et al.. (2008). Study on Factors in Time-Dependent Dielectric Breakdown Degradation of Cu/Low-k Integration Related to Cu Chemical–Mechanical Polishing. Japanese Journal of Applied Physics. 47(6R). 4469–4469. 3 indexed citations

Noguchi, J., Yasuhiro Hayashi, Nozomu Okino, et al.. (2008). Crystal structure of the covalent intermediate of human cytosolic β-glucosidase. Biochemical and Biophysical Research Communications. 374(3). 549–552. 21 indexed citations

Yamada, Yohei, et al.. (2008). Analysis of Post-Chemical-Mechanical-Polishing Cleaning Mechanisms for Improving Time-Dependent Dielectric Breakdown Reliability. Journal of The Electrochemical Society. 155(5). H301–H301. 2 indexed citations

10.

Noguchi, J., et al.. (2006). Sacrificial CVD film etch-back process for air-gap Cu interconnects. Thin Solid Films. 515(12). 4960–4965. 3 indexed citations

11.

Noguchi, J., et al.. (2005). Influence of Cu-Ion Migration and Fine-Line Effect on Time-Dependent Dielectric Breakdown Lifetime of Cu Interconnects. Japanese Journal of Applied Physics. 44(1R). 94–94. 5 indexed citations

12.

Noguchi, J., Hiroshi Ashihara, Taku Oshima, et al.. (2005). Dual damascene process for air-gap Cu interconnects using conventional CVD films as sacrificial layers. 174–176. 4 indexed citations

13.

Noguchi, J., Tsuyoshi Fujiwara, Takahiro Nakamura, et al.. (2004). Simple self-aligned air-gap interconnect process with Cu/FSG structure. 68–70. 7 indexed citations

14.

Saito, T., Hiroshi Ashihara, K. Ishikawa, et al.. (2004). A robust, deep-submicron copper interconnect structure using self-aligned metal capping method. 36–38.

15.

Noguchi, J., Natsuko Miura, M. Kubo, et al.. (2003). Cu-ion-migration phenomena and its influence on TDDB lifetime in Cu metallization. 287–292. 20 indexed citations

16.

Aoki, Hiromichi, Taku Oshima, J. Noguchi, et al.. (2002). Robust 130 mn-node Cu dual damascene technology with low-k barrier SiCN. 4.2.1–4.2.4. 1 indexed citations

17.

Yamaguchi, Hiroshi, N. Ohashi, T. Imai, et al.. (2002). A 7 level metallization with Cu damascene process using newly developed abrasive free polishing. 264–266. 7 indexed citations

18.

Noguchi, J., N. Ohashi, Hiroshi Ashihara, et al.. (2002). Impact of low-k dielectrics and barrier metals on TDDB lifetime of Cu interconnects. 355–359. 25 indexed citations

19.

Takeda, Ken’ichi, et al.. (2001). Light Emission Analysis of Dielectric Breakdown in Stressed Damascene Copper Interconnection. Japanese Journal of Applied Physics. 40(4S). 2658–2658. 3 indexed citations

20.

Noguchi, J., et al.. (2001). Effect of NH/sub 3/-plasma treatment and CMP modification on TDDB improvement in Cu metallization. IEEE Transactions on Electron Devices. 48(7). 1340–1345. 37 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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