David V. Forbes

1.8k total citations
139 papers, 1.3k citations indexed

About

David V. Forbes is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, David V. Forbes has authored 139 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 122 papers in Electrical and Electronic Engineering, 105 papers in Atomic and Molecular Physics, and Optics and 48 papers in Materials Chemistry. Recurrent topics in David V. Forbes's work include Semiconductor Quantum Structures and Devices (93 papers), solar cell performance optimization (44 papers) and Quantum Dots Synthesis And Properties (41 papers). David V. Forbes is often cited by papers focused on Semiconductor Quantum Structures and Devices (93 papers), solar cell performance optimization (44 papers) and Quantum Dots Synthesis And Properties (41 papers). David V. Forbes collaborates with scholars based in United States, Germany and Japan. David V. Forbes's co-authors include Seth M. Hubbard, Christopher G. Bailey, Ryne P. Raffaelle, J. J. Coleman, Stephen J. Polly, T.M. Cockerill, R.M. Lammert, Zachary S. Bittner, Gary M. Smith and Haoxue Han and has published in prestigious journals such as Nano Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

David V. Forbes

126 papers receiving 1.3k citations

Peers

David V. Forbes
J.C. Irvin United States
Zh. M. Wang United States
M. Sūdžius Germany
R. Azoulay France
E. Gaubas Lithuania
E. Luna Germany
J.C. Twichell United States
David V. Forbes
Citations per year, relative to David V. Forbes David V. Forbes (= 1×) peers A. Schlachetzki

Countries citing papers authored by David V. Forbes

Since Specialization
Citations

This map shows the geographic impact of David V. Forbes's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by David V. Forbes with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites David V. Forbes more than expected).

Fields of papers citing papers by David V. Forbes

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by David V. Forbes. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by David V. Forbes. The network helps show where David V. Forbes may publish in the future.

Co-authorship network of co-authors of David V. Forbes

This figure shows the co-authorship network connecting the top 25 collaborators of David V. Forbes. A scholar is included among the top collaborators of David V. Forbes based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with David V. Forbes. David V. Forbes is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Forbes, David V., et al.. (2025). Laser-Induced Rehydration of Cryo-Landed Proteins Restores Native Structure. Molecular & Cellular Proteomics. 24(6). 100987–100987.
2.
Subedi, Indra, et al.. (2023). Optical and electronic transport properties of epitaxial InGaAs and InAlAs in multilayer stacks. Journal of Materials Science. 58(23). 9533–9546. 6 indexed citations
3.
Smith, Brittany, et al.. (2017). InAlAs photovoltaic cell design for high device efficiency. Progress in Photovoltaics Research and Applications. 25(8). 706–713. 8 indexed citations
4.
Bittner, Zachary S., et al.. (2016). Optimization in wide-band-gap quantum dot solar cells. 8981. 151–154. 3 indexed citations
5.
Cress, Cory D., Benjamin Richards, David V. Forbes, et al.. (2014). Strain Effects on Radiation Tolerance of Triple-Junction Solar Cells With InAs Quantum Dots in the GaAs Junction. IEEE Journal of Photovoltaics. 4(1). 224–232. 14 indexed citations
7.
Driscoll, Kristina, et al.. (2014). Effect of quantum dot position and background doping on the performance of quantum dot enhanced GaAs solar cells. Applied Physics Letters. 104(2). 23119–23119. 25 indexed citations
8.
Forbes, David V., et al.. (2014). The effect of barrier composition on quantum dot solar cell performance. 3488–3491. 2 indexed citations
9.
Bittner, Zachary S., David V. Forbes, Rao Tatavarti, et al.. (2013). Alpha radiation effects on n-i-p quantum dot epitaxial lift-off solar cells. 98. 2784–2789. 3 indexed citations
10.
Driscoll, Kristina, et al.. (2013). Investigation of the design parameters of quantum dot enhanced III-V solar cells. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 8620. 86200L–86200L. 2 indexed citations
11.
Polly, Stephen J., David V. Forbes, Christopher G. Bailey, et al.. (2013). Fabrication and analysis of multijunction solar cells with a quantum dot (In)GaAs junction. Progress in Photovoltaics Research and Applications. 22(11). 1172–1179. 28 indexed citations
12.
Polly, Stephen J., David V. Forbes, Christopher G. Bailey, et al.. (2011). Investigation of quantum dot enhanced triple junction solar cells. 127–132. 14 indexed citations
13.
Su, Ning, Patrick Fay, S. Sinharoy, David V. Forbes, & David Scheiman. (2007). Characterization and modeling of InGaAs/InAsP thermophotovoltaic converters under high illumination intensities. Journal of Applied Physics. 101(6). 15 indexed citations
14.
Kerr, A. R., et al.. (2006). First Astronomical Observations with an ALMA Band 6 (211-275 GHz) Sideband-Separating SIS Mixer-Preamp. 5 indexed citations
15.
Robertson, I. M., et al.. (1996). Depth dependence of ion implantation damage in AlxGa1−xAs/GaAs heterostructures. Journal of Applied Physics. 80(8). 4366–4371. 14 indexed citations
16.
Han, Haoxue, David V. Forbes, & J. J. Coleman. (1995). InGaAs-AlGaAs-GaAs strained-layer quantum-well heterostructure square ring lasers. IEEE Journal of Quantum Electronics. 31(11). 1994–1997. 16 indexed citations
17.
Smith, Gary M., J.S. Hughes, M.L. Osowski, David V. Forbes, & J. J. Coleman. (1994). Ridge waveguide distributed Bragg reflector InGaAs/GaAs quantum well lasers. Conference on Lasers and Electro-Optics.
18.
Lammert, R.M., T.M. Cockerill, David V. Forbes, & J. J. Coleman. (1994). Dual-channel strained-layer in GaAs-GaAs-AlGaAs WDM source with integrated coupler by selective-area MOCVD. IEEE Photonics Technology Letters. 6(10). 1167–1169. 7 indexed citations
19.
Smith, Gary M., et al.. (1993). Optical properties of reactive ion etched corner reflector strained-layer InGaAs-GaAs-AlGaAs quantum-well lasers. IEEE Photonics Technology Letters. 5(8). 873–876. 12 indexed citations
20.
Cockerill, T.M., David V. Forbes, Haoxue Han, & J. J. Coleman. (1993). Monolithic integration of a strained-layer InGaAs-GaAs-AlGaAs quantum-well laser with a passive waveguide by selective-area MOCVD. IEEE Photonics Technology Letters. 5(4). 448–450. 14 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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