John T. Torvik

1.0k total citations
28 papers, 837 citations indexed

About

John T. Torvik is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, John T. Torvik has authored 28 papers receiving a total of 837 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 18 papers in Condensed Matter Physics and 11 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in John T. Torvik's work include GaN-based semiconductor devices and materials (18 papers), Silicon Carbide Semiconductor Technologies (17 papers) and Ga2O3 and related materials (9 papers). John T. Torvik is often cited by papers focused on GaN-based semiconductor devices and materials (18 papers), Silicon Carbide Semiconductor Technologies (17 papers) and Ga2O3 and related materials (9 papers). John T. Torvik collaborates with scholars based in United States, Poland and Taiwan. John T. Torvik's co-authors include J. I. Pánkové, M. W. Leksono, Bart Van Zeghbroeck, R. J. Feuerstein, F. Namavar, C. H. Qiu, Jason B. Baxter, Sean E. Shaheen, Juanita Kurtin and Ingrid Repins and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

John T. Torvik

27 papers receiving 818 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
John T. Torvik United States	15	556	482	379	245	147	28	837
M. J. Reed United States	13	273 0.5×	768 1.6×	855 2.3×	641 2.6×	233 1.6×	22	1.2k
Liwei Shi China	18	399 0.7×	195 0.4×	689 1.8×	292 1.2×	104 0.7×	85	931
Muhammad Junaid Sweden	19	282 0.5×	297 0.6×	696 1.8×	528 2.2×	52 0.4×	54	891
Weifang Lu Japan	15	257 0.5×	294 0.6×	355 0.9×	212 0.9×	114 0.8×	58	591
S. Hautakangas Finland	10	260 0.5×	412 0.9×	253 0.7×	265 1.1×	72 0.5×	16	546
Lynn Gedvilas United States	12	816 1.5×	137 0.3×	372 1.0×	84 0.3×	229 1.6×	26	915
Xiong Zhang China	15	203 0.4×	570 1.2×	354 0.9×	393 1.6×	158 1.1×	105	763
B. N. Pantha United States	17	359 0.6×	868 1.8×	763 2.0×	495 2.0×	282 1.9×	21	1.3k
A. Tanaka Japan	15	389 0.7×	98 0.2×	266 0.7×	43 0.2×	151 1.0×	31	523
O. Monnereau France	14	132 0.2×	248 0.5×	336 0.9×	227 0.9×	97 0.7×	62	655

Countries citing papers authored by John T. Torvik

Since Specialization

Citations

This map shows the geographic impact of John T. Torvik's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by John T. Torvik with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites John T. Torvik more than expected).

Fields of papers citing papers by John T. Torvik

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by John T. Torvik. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by John T. Torvik. The network helps show where John T. Torvik may publish in the future.

Co-authorship network of co-authors of John T. Torvik

This figure shows the co-authorship network connecting the top 25 collaborators of John T. Torvik. A scholar is included among the top collaborators of John T. Torvik based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with John T. Torvik. John T. Torvik is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Wolden, Colin A., Juanita Kurtin, Jason B. Baxter, et al.. (2011). Photovoltaic manufacturing: Present status, future prospects, and research needs. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 29(3). 211 indexed citations

Zhao, Feng, et al.. (2007). Optimized reactive ion etch process for high performance SiC bipolar junction transistors. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 25(4). 961–966. 2 indexed citations

Zhao, Feng, et al.. (2006). Rugged UHF 4H-SiC BJTs with Record 22.8 W/mm Power Density and 8.3 dB Gain. 153–154. 3 indexed citations

Torvik, John T., et al.. (2006). Demonstration of Hybrid Silicon-on-Silicon Carbide Wafers and Electrical Test Structures with Improved Thermal Performance. MRS Proceedings. 911. 7 indexed citations

Perez‐Würfl, Ivan, Feng Zhao, Chih‐Fang Huang, John T. Torvik, & Bart Van Zeghbroeck. (2006). 4H-SiC Bipolar Transistors with UHF and L-Band Operation. Materials science forum. 527-529. 1421–1424. 1 indexed citations

Zhao, Feng, et al.. (2005). Analysis of Transit Times and Minority Carrier Mobility in n-p-n 4H-SiC Bipolar Junction Transistors. IEEE Transactions on Electron Devices. 52(12). 2541–2545. 7 indexed citations

Perez‐Würfl, Ivan, John T. Torvik, & Bart Van Zeghbroeck. (2004). Analysis of Power Dissipation and High Temperature Operation in 4H-SiC Bipolar Junction Transistors with 4.9 MW/cm<sup>2</sup> Power Density Handling Ability. Materials science forum. 457-460. 1121–1124. 5 indexed citations

Torvik, John T., et al.. (2004). 4H-SiC RF bipolar junction transistors. 27–28. 4 indexed citations

Pérez, Israel, Jeffrey W. Elam, Steven M. George, et al.. (2002). Fabrication and characterization of 4H-SiC MOS capacitors with atomic layer deposited (ALD) SiO/sub 2/. 144–147. 1 indexed citations

10.

Torvik, John T., J. I. Pánkové, S. Nakamura, I. Grzegory, & S. Porowski. (1999). The effect of threading dislocations, Mg doping, and etching on the spectral responsivity in GaN-based ultraviolet detectors. Journal of Applied Physics. 86(8). 4588–4593. 14 indexed citations

11.

Pánkové, J. I., John T. Torvik, Chen Qiu, et al.. (1999). Molecular doping of gallium nitride. Applied Physics Letters. 74(3). 416–418. 32 indexed citations

12.

Torvik, John T., Changhua Qiu, M. W. Leksono, & J. I. Pánkové. (1998). Optical characterization of GaN/SiC n-p heterojunctions and p-SiC. Applied Physics Letters. 72(8). 945–947. 34 indexed citations

13.

Torvik, John T., J. I. Pánkové, E. Iliopoulos, Hock M. Ng, & T. D. Moustakas. (1998). Optical properties of GaN grown over SiO2 on SiC substrates by molecular beam epitaxy. Applied Physics Letters. 72(2). 244–245. 15 indexed citations

14.

Torvik, John T., M. W. Leksono, J. I. Pánkové, et al.. (1998). Electrical characterization of GaN/SiC n-p heterojunction diodes. Applied Physics Letters. 72(11). 1371–1373. 49 indexed citations

15.

Torvik, John T., R. J. Feuerstein, C. H. Qiu, J. I. Pánkové, & F. Namavar. (1997). Photoluminescence excitation measurements on erbium implanted GaN. Journal of Applied Physics. 82(4). 1824–1827. 14 indexed citations

16.

Torvik, John T., R. J. Feuerstein, C. H. Qiu, J. I. Pánkové, & F. Namavar. (1997). The Doping and Characterization of Erbium-Implanted Gan. MRS Proceedings. 482. 5 indexed citations

17.

Torvik, John T., C. H. Qiu, R. J. Feuerstein, J. I. Pánkové, & F. Namavar. (1997). Photo-, cathodo-, and electroluminescence from erbium and oxygen co-implanted GaN. Journal of Applied Physics. 81(9). 6343–6350. 78 indexed citations

18.

Torvik, John T., R. J. Feuerstein, J. I. Pánkové, C. H. Qiu, & F. Namavar. (1996). Electroluminescence from erbium and oxygen coimplanted GaN. Applied Physics Letters. 69(14). 2098–2100. 58 indexed citations

19.

Torvik, John T., R. J. Feuerstein, C. H. Qiu, et al.. (1996). Annealing Study of Erbium and Oxygen Implanted Gallium Nitride. MRS Proceedings. 422. 17 indexed citations

20.

Qiu, C. H., M. W. Leksono, J. I. Pánkové, et al.. (1995). Cathodoluminescence study of erbium and oxygen coimplanted gallium nitride thin films on sapphire substrates. Applied Physics Letters. 66(5). 562–564. 57 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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