J. E. Carceller

1.4k total citations
81 papers, 1.2k citations indexed

About

J. E. Carceller is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, J. E. Carceller has authored 81 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 74 papers in Electrical and Electronic Engineering, 35 papers in Atomic and Molecular Physics, and Optics and 11 papers in Materials Chemistry. Recurrent topics in J. E. Carceller's work include Advancements in Semiconductor Devices and Circuit Design (54 papers), Semiconductor materials and devices (52 papers) and Silicon Carbide Semiconductor Technologies (19 papers). J. E. Carceller is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (54 papers), Semiconductor materials and devices (52 papers) and Silicon Carbide Semiconductor Technologies (19 papers). J. E. Carceller collaborates with scholars based in Spain, Canada and United Kingdom. J. E. Carceller's co-authors include J. A. López‐Villanueva, F. Gámiz, P. Cartujo, J.B. Roldán, J. A. Jiménez-Tejada, S. Rodrı́guez, A. Godoy, A. Palma, J. Banqueri and Francisco M. Gómez‐Campos and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

J. E. Carceller

78 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. E. Carceller Spain 19 1.1k 313 137 126 28 81 1.2k
T. C. G. Reusch Australia 17 787 0.7× 619 2.0× 232 1.7× 146 1.2× 38 1.4× 37 1.0k
F.E. Prins Germany 15 485 0.5× 432 1.4× 131 1.0× 231 1.8× 6 0.2× 51 673
P. M. Koenraad Netherlands 13 300 0.3× 434 1.4× 188 1.4× 75 0.6× 13 0.5× 25 475
H. Noge Japan 16 599 0.6× 666 2.1× 217 1.6× 167 1.3× 52 1.9× 39 892
J. H. Coombs United Kingdom 9 346 0.3× 505 1.6× 97 0.7× 230 1.8× 6 0.2× 9 629
Guilhem Almuneau France 16 623 0.6× 460 1.5× 79 0.6× 68 0.5× 32 1.1× 79 717
H. Q. Ni China 16 468 0.4× 366 1.2× 350 2.6× 95 0.8× 22 0.8× 45 706
A. Kozen Japan 15 700 0.6× 388 1.2× 56 0.4× 67 0.5× 9 0.3× 41 764
Federico Bottegoni Italy 17 495 0.5× 536 1.7× 327 2.4× 74 0.6× 8 0.3× 50 797
C. Amano Japan 16 670 0.6× 354 1.1× 53 0.4× 71 0.6× 14 0.5× 63 722

Countries citing papers authored by J. E. Carceller

Since Specialization
Citations

This map shows the geographic impact of J. E. Carceller's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. E. Carceller with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. E. Carceller more than expected).

Fields of papers citing papers by J. E. Carceller

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. E. Carceller. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. E. Carceller. The network helps show where J. E. Carceller may publish in the future.

Co-authorship network of co-authors of J. E. Carceller

This figure shows the co-authorship network connecting the top 25 collaborators of J. E. Carceller. A scholar is included among the top collaborators of J. E. Carceller based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. E. Carceller. J. E. Carceller is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
López-Varo, Pilar, J. A. Jiménez-Tejada, J. A. López‐Villanueva, J. E. Carceller, & M. Jamal Deen. (2012). Modeling the transition from ohmic to space charge limited current in organic semiconductors. Organic Electronics. 13(9). 1700–1709. 32 indexed citations
2.
Rodrı́guez, S., et al.. (2009). Confinement in quantum wire periodic nanostructures. 707–709.
3.
Gómez‐Campos, Francisco M., S. Rodrı́guez, & J. E. Carceller. (2009). Computational improvement of the normalized plane-wave method and its applications in quantum dot studies. Mathematical and Computer Modelling. 51(7-8). 873–879. 1 indexed citations
4.
Gómez‐Campos, Francisco M., S. Rodrı́guez, & J. E. Carceller. (2007). Simple method to incorporate nonparabolicity effects in the Schrödinger equation of a quantum dot. Journal of Applied Physics. 101(9). 7 indexed citations
5.
Gómez‐Campos, Francisco M., S. Rodrı́guez, & J. E. Carceller. (2006). Analysis of the influence of band non-parabolicity on the subband structure of a Si quantum wire. Journal of Computational Electronics. 6(1-3). 149–152. 1 indexed citations
6.
Rodrı́guez, S., Francisco M. Gómez‐Campos, & J. E. Carceller. (2004). Simple analytical valence band structure including warping and non-parabolicity to investigate hole transport in Si and Ge. Semiconductor Science and Technology. 20(1). 16–22. 21 indexed citations
7.
Jiménez-Tejada, J. A., A. Godoy, J. E. Carceller, & J. A. López‐Villanueva. (2003). Effects of oxygen related defects on the electrical and thermal behavior of a n+−p junction. Journal of Applied Physics. 95(2). 561–570. 10 indexed citations
8.
Roldán, J.B., et al.. (2003). Strained-Si on Si/sub 1-x/ mosfet mobility model. IEEE Transactions on Electron Devices. 50(5). 1408–1411. 16 indexed citations
9.
Gámiz, F., P. Cartujo, F. Jiménez-Molinos, & J. E. Carceller. (2003). Influence of image force and many-body correction on electron mobility in ultrathin double gate silicon on insulator inversion layers. Applied Physics Letters. 83(15). 3120–3122. 3 indexed citations
10.
Gámiz, F., J.B. Roldán, J. A. López‐Villanueva, et al.. (2001). Electron transport in silicon-on-insulator devices. Solid-State Electronics. 45(4). 613–620. 4 indexed citations
11.
Roldán, J.B., F. Gámiz, J. A. López‐Villanueva, J. E. Carceller, & P. Cartujo. (1999). A computational study of the strained-Si MOSFET: a possible alternative for the next century electronics industry. Computer Physics Communications. 121-122. 547–549. 1 indexed citations
12.
Gámiz, F., J.B. Roldán, J. A. López‐Villanueva, P. Cartujo, & J. E. Carceller. (1999). Surface roughness at the Si–SiO2 interfaces in fully depleted silicon-on-insulator inversion layers. Journal of Applied Physics. 86(12). 6854–6863. 97 indexed citations
13.
Banqueri, J., J. A. López‐Villanueva, P. Cartujo, S. Rodrı́guez, & J. E. Carceller. (1999). Experimental determination of the effective mobility in NMOSFETs: a comparative study. Solid-State Electronics. 43(4). 701–707. 1 indexed citations
14.
López‐Villanueva, J. A., et al.. (1997). Study of the effects of a stepped doping profile in short-channel MOSFETs. IEEE Transactions on Electron Devices. 44(9). 1425–1431. 21 indexed citations
15.
Palma, A., J. A. López‐Villanueva, & J. E. Carceller. (1996). Electric Field Dependence of the Electron Capture Cross Section of Neutral Traps in SiO2. Journal of The Electrochemical Society. 143(8). 2687–2690. 15 indexed citations
16.
Palma, A., J. A. Jiménez-Tejada, J. Banqueri, P. Cartujo, & J. E. Carceller. (1993). Accurate determination of majority thermal-capture cross sections of deep impurities in p-n junctions. Journal of Applied Physics. 74(4). 2605–2612. 7 indexed citations
17.
Banqueri, J., F. Gámiz, J. E. Carceller, P. Cartujo, & J. A. López‐Villanueva. (1993). Influence of the interface-state density on the electron mobility in silicon inversion layers. Journal of Electronic Materials. 22(9). 1159–1163. 9 indexed citations
18.
Cartujo, P., et al.. (1993). Modified Schrödinger equation including nonparabolicity for the study of a two-dimensional electron gas. Physical review. B, Condensed matter. 48(3). 1626–1631. 42 indexed citations
19.
Jiménez-Tejada, J. A., et al.. (1992). Importance of the choice of the profile model for ap-n junction in the location of deep levels. Journal of Electronic Materials. 21(9). 883–886. 2 indexed citations
20.
Morante, J.R., J. E. Carceller, P. Cartujo, & J. Barbolla. (1983). Thermal emission rates and capture cross-section of majority carriers at titanium levels in silicon. Solid-State Electronics. 26(1). 1–6. 18 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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