J. E. Carceller

1.4k citations

81 papers · 1.2k · h-index 19

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Silicon Carbide Semiconductor Technologies
- Integrated Circuits and Semiconductor Failure Analysis
Atomic and Molecular Physics, and Optics top 10%
- Quantum and electron transport phenomena
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 74
- Advancements in Semiconductor Devices and Circuit Design 54
- Semiconductor materials and devices 52
- Silicon Carbide Semiconductor Technologies 19
- Silicon and Solar Cell Technologies 13
- Integrated Circuits and Semiconductor Failure Analysis 9
Atomic and Molecular Physics, and Optics 35
- Quantum and electron transport phenomena 16
- Semiconductor Quantum Structures and Devices 12
- Semiconductor materials and interfaces 9

Co-authors: J. A. López‐Villanueva (51 shared papers)F. Gámiz (35 shared papers)P. Cartujo (33 shared papers)J.B. Roldán (22 shared papers)J. A. Jiménez-Tejada (24 shared papers)S. Rodrı́guez (24 shared papers)A. Godoy (11 shared papers)A. Palma (10 shared papers)
Journals: Journal of Applied Physics (18 papers)Solid-State Electronics (10 papers)IEEE Transactions on Electron Devices (9 papers)Applied Physics Letters (6 papers)Semiconductor Science and Technology (6 papers)
Partner nations: Spain Canada United Kingdom

In The Last Decade

J. E. Carceller

78 papers receiving 1.1k citations

Peers

Countries citing papers authored by J. E. Carceller

Since Specialization

Citations

This map shows the geographic impact of J. E. Carceller's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. E. Carceller with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. E. Carceller more than expected).

Fields of papers citing papers by J. E. Carceller

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. E. Carceller. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. E. Carceller. The network helps show where J. E. Carceller may publish in the future.

Co-authors

The 25 scholars most cited alongside J. E. Carceller, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. E. Carceller Line = papers co-authored together J. E. Carceller links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Showing the 20 most-cited of 81 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Quantum two-dimensional calculation of time constants of random telegraph signals in metal-oxide–semiconductor structures Physical review. B, Condensed matter ·A. Palma, A. Godoy, J. A. Jiménez-Tejada, J. E. Carceller, J. A. López‐Villanueva	1997	107
2	Surface roughness at the Si–SiO2 interfaces in fully depleted silicon-on-insulator inversion layers Journal of Applied Physics ·F. Gámiz, J.B. Roldán, J. A. López‐Villanueva, P. Cartujo, J. E. Carceller	1999	97
3	Monte Carlo simulation of electron transport properties in extremely thin SOI MOSFET's IEEE Transactions on Electron Devices ·F. Gámiz, J. A. López‐Villanueva, J.B. Roldán, J. E. Carceller, P. Cartujo	1998	64
4	Universality of electron mobility curves in MOSFETs: a Monte Carlo study IEEE Transactions on Electron Devices ·F. Gámiz, J. A. López‐Villanueva, J. Banqueri, J. E. Carceller, P. Cartujo	1995	57
5	A Monte Carlo study on the electron-transport properties of high-performance strained-Si on relaxed Si1−xGex channel MOSFETs Journal of Applied Physics ·J.B. Roldán, F. Gámiz, J. A. López‐Villanueva, J. E. Carceller	1996	43
6	Modified Schrödinger equation including nonparabolicity for the study of a two-dimensional electron gas Physical review. B, Condensed matter ·J. A. Lo ́pez-Villanueva, I. Melchor, P. Cartujo, J. E. Carceller	1993	42
7	Modeling effects of electron-velocity overshoot in a MOSFET IEEE Transactions on Electron Devices ·J.B. Roldán, F. Gámiz, J. A. López‐Villanueva, J. E. Carceller	1997	42
8	Electron mobility in extremely thin single-gate silicon-on-insulator inversion layers Journal of Applied Physics ·F. Gámiz, J.B. Roldán, P. Cartujo, J. E. Carceller, J. A. López‐Villanueva, S. Rodrı́guez	1999	39
9	Monte Carlo simulation of remote-Coulomb-scattering-limited mobility in metal–oxide–semiconductor transistors Applied Physics Letters ·F. Gámiz, J.B. Roldán, J. E. Carceller, P. Cartujo	2003	38
10	Hole confinement and energy subbands in a silicon inversion layer using the effective mass theory Journal of Applied Physics ·S. Rodrı́guez, J. A. López‐Villanueva, I. Melchor, J. E. Carceller	1999	33
11	Modeling the transition from ohmic to space charge limited current in organic semiconductors Organic Electronics ·Pilar López-Varo, J. A. Jiménez-Tejada, J. A. López‐Villanueva, J. E. Carceller, M. Jamal Deen	2012	32
12	Contact effects in compact models of organic thin film transistors: Application to zinc phthalocyanine-based transistors Organic Electronics ·J. A. Jiménez-Tejada, Kayan Awawdeh, J. A. López‐Villanueva, J. E. Carceller, M. Jamal Deen, Nandu B. Chaure, Tamara V. Basova, Asim K. Ray	2011	32
13	Analysis of the effects of constant-current Fowler–Nordheim-tunneling injection with charge trapping inside the potential barrier Journal of Applied Physics ·J. A. López‐Villanueva, J. A. Jiménez-Tejada, P. Cartujo, Joan Bausells, J. E. Carceller	1991	32
14	The dependence of the electron mobility on the longitudinal electric field in MOSFETs Semiconductor Science and Technology ·J.B. Roldán, F. Gámiz, J. A. López‐Villanueva, J. E. Carceller, P. Cartujo	1997	31
15	Electron mobility in double gate silicon on insulator transistors: Symmetric-gate versus asymmetric-gate configuration Journal of Applied Physics ·F. Gámiz, J.B. Roldán, A. Godoy, P. Cartujo, J. E. Carceller	2003	28
16	Study of the effects of a stepped doping profile in short-channel MOSFETs IEEE Transactions on Electron Devices ·J. A. López‐Villanueva, F. Gámiz, J.B. Roldán, Y. Ghailan, J. E. Carceller, P. Cartujo	1997	21
17	Simple analytical valence band structure including warping and non-parabolicity to investigate hole transport in Si and Ge Semiconductor Science and Technology ·S. Rodrı́guez, Francisco M. Gómez‐Campos, J. E. Carceller	2004	21
18	A model for the drain current of deep submicrometer MOSFETs including electron-velocity overshoot IEEE Transactions on Electron Devices ·J.B. Roldán, F. Gámiz, J. A. López‐Villanueva, P. Cartujo, J. E. Carceller	1998	20
19	Thermal emission rates and capture cross-section of majority carriers at titanium levels in silicon Solid-State Electronics ·J.R. Morante, J. E. Carceller, P. Cartujo, J. Barbolla	1983	18
20	Influence of the oxide-charge distribution profile on electron mobility in MOSFET's IEEE Transactions on Electron Devices ·F. Gámiz, J. A. López‐Villanueva, J. Banqueri, J. E. Carceller	1995	17

About J. E. Carceller

J. E. Carceller is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Biomedical Engineering and Media Technology, having authored 81 papers that have together received 1.2k indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (54 papers), Semiconductor materials and devices (52 papers), Silicon Carbide Semiconductor Technologies (19 papers), Quantum and electron transport phenomena (16 papers), Silicon and Solar Cell Technologies (13 papers), Semiconductor Quantum Structures and Devices (12 papers), Integrated Circuits and Semiconductor Failure Analysis (9 papers) and Semiconductor materials and interfaces (9 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.1k citations), Atomic and Molecular Physics, and Optics (313 citations), Materials Chemistry (137 citations), Biomedical Engineering (126 citations) and Polymers and Plastics (28 citations). J. E. Carceller has collaborated with scholars based in Spain, Canada and United Kingdom. Frequent co-authors include J. A. López‐Villanueva, F. Gámiz, P. Cartujo, J.B. Roldán, J. A. Jiménez-Tejada, S. Rodrı́guez, A. Godoy, A. Palma, J. Banqueri and Francisco M. Gómez‐Campos. Their work appears in journals such as Journal of Applied Physics, Solid-State Electronics, IEEE Transactions on Electron Devices, Applied Physics Letters and Semiconductor Science and Technology.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

J. E. Carceller

Impact in

Papers in i

In The Last Decade

J. E. Carceller

Peers

Countries citing papers authored by J. E. Carceller

Fields of papers citing papers by J. E. Carceller

All Works

About J. E. Carceller

Explore authors with similar magnitude of impact

Papers in