J. Dolle

761 total citations · 1 hit paper
9 papers, 678 citations indexed

About

J. Dolle is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Mechanical Engineering. According to data from OpenAlex, J. Dolle has authored 9 papers receiving a total of 678 indexed citations (citations by other indexed papers that have themselves been cited), including 8 papers in Electrical and Electronic Engineering, 3 papers in Atomic and Molecular Physics, and Optics and 2 papers in Mechanical Engineering. Recurrent topics in J. Dolle's work include Silicon Carbide Semiconductor Technologies (7 papers), Semiconductor materials and interfaces (3 papers) and Silicon and Solar Cell Technologies (2 papers). J. Dolle is often cited by papers focused on Silicon Carbide Semiconductor Technologies (7 papers), Semiconductor materials and interfaces (3 papers) and Silicon and Solar Cell Technologies (2 papers). J. Dolle collaborates with scholars based in Germany. J. Dolle's co-authors include Henrik Buschmann, Martin Wilkening, Jürgen Janek, Patrick Bottke, Stefan Berendts, Viola Düppel, Lorenz Kienle, Alexander Kuhn, Anatoliy Senyshyn and Helmut Ehrenberg and has published in prestigious journals such as Physical Chemistry Chemical Physics, Journal of Crystal Growth and Materials Science and Engineering B.

In The Last Decade

J. Dolle

9 papers receiving 664 citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Structure and dynamics of the fast lithium ion conductor “Li7La3Zr2O12”

2011 602 citations Henrik Buschmann, J. Dolle et al. Physical Chemistry Chemical Physics profile →

Peers

Countries citing papers authored by J. Dolle

Since Specialization

Citations

This map shows the geographic impact of J. Dolle's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Dolle with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Dolle more than expected).

Fields of papers citing papers by J. Dolle

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Dolle. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Dolle. The network helps show where J. Dolle may publish in the future.

Co-authorship network of co-authors of J. Dolle

This figure shows the co-authorship network connecting the top 25 collaborators of J. Dolle. A scholar is included among the top collaborators of J. Dolle based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Dolle. J. Dolle is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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9 of 9 papers shown

#	Work	Indexed citations
1	Structure and dynamics of the fast lithium ion conductor “Li7La3Zr2O12” breakdown → 2011 ·Physical Chemistry Chemical Physics ·Henrik Buschmann, J. Dolle, Stefan Berendts, Alexander Kuhn, Patrick Bottke, Martin Wilkening, Paul Heitjans, Anatoliy Senyshyn, Helmut Ehrenberg, Andriy Lotnyk, Viola Düppel, Lorenz Kienle, Jürgen Janek	602
2	Source Material Related Distribution of Defects in 6H-SiC Single Crystals 2001 ·Materials science forum ·(unknown), D. Siche, J. Dolle, D. Schulz, J. Wollweber	2
3	Growth related distribution of secondary phase inclusions in 6H–SiC single crystals 2001 ·Journal of Crystal Growth ·(unknown), J. Dolle, (unknown), D. Siche, D. Schulz, J. Wollweber	13
4	Structural and electrical properties of unintentionally doped 4H-SiC epitaxial layers—Grown by hot-wall CVD 2001 ·Journal of Electronic Materials ·G. Wagner, Bernd Thomas, (unknown), J. Dolle, K. Irmscher	8
5	Growth Related Distribution of Secondary Phase Inclusions in 6H-SiC Single Crystals 2001 ·Materials science forum ·(unknown), J. Dolle, (unknown), D. Siche, D. Schulz, J. Wollweber	4
6	Study of Nitrogen Incorporation in 6H-SiC Single Crystals Grown by PVT 2000 ·Materials science forum ·D. Schulz, K. Irmscher, J. Dolle, (unknown), Timo Müller, (unknown), D. Siche, G. Wagner, J. Wollweber	18
7	Impurity incorporation during sublimation growth of 6H bulk SiC 1999 ·Journal of Crystal Growth ·D. Schulz, G. Wagner, J. Dolle, K. Irmscher, T.F.G. Muller, (unknown), D. Siche, J. Wollweber	11
8	Influence of different growth parameters and related conditions on 6H-SiC crystals grown by the modified Lely method 1999 ·Materials Science and Engineering B ·(unknown), D. Siche, J. Dolle, (unknown), T.F.G. Muller, D. Schulz, G. Wagner, J. Wollweber	17
9	Influence of excess silicon on the surface morphology and defect structure during the initial stages of SiC sublimation growth 1999 ·Materials Science and Engineering B ·D. Schulz, G. Wagner, (unknown), J. Dolle, (unknown), T.F.G. Muller, (unknown), D. Siche, J. Wollweber	3

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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