Bernd Thomas

929 total citations
50 papers, 748 citations indexed

About

Bernd Thomas is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Bernd Thomas has authored 50 papers receiving a total of 748 indexed citations (citations by other indexed papers that have themselves been cited), including 40 papers in Electrical and Electronic Engineering, 12 papers in Electronic, Optical and Magnetic Materials and 10 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Bernd Thomas's work include Silicon Carbide Semiconductor Technologies (38 papers), Silicon and Solar Cell Technologies (19 papers) and Thin-Film Transistor Technologies (13 papers). Bernd Thomas is often cited by papers focused on Silicon Carbide Semiconductor Technologies (38 papers), Silicon and Solar Cell Technologies (19 papers) and Thin-Film Transistor Technologies (13 papers). Bernd Thomas collaborates with scholars based in Germany, Canada and United States. Bernd Thomas's co-authors include L. Rémy, A. Pineau, K. Irmscher, Ioana Pintilie, Christian Hecht, L. Pintilie, Jochen Friedrich, Dethard Peters, Patrick Berwian and René Stein and has published in prestigious journals such as Applied Physics Letters, Journal of Crystal Growth and physica status solidi (b).

In The Last Decade

Bernd Thomas

49 papers receiving 721 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Bernd Thomas Germany 13 399 294 217 112 106 50 748
Takako Yamashita Japan 14 230 0.6× 346 1.2× 320 1.5× 104 0.9× 67 0.6× 58 658
S. Yamaura Japan 13 261 0.7× 277 0.9× 190 0.9× 120 1.1× 62 0.6× 47 582
S.-M. Kuo United States 12 459 1.2× 360 1.2× 209 1.0× 135 1.2× 108 1.0× 16 756
M.A. Kulakov Germany 15 272 0.7× 210 0.7× 286 1.3× 77 0.7× 248 2.3× 39 648
J.M. Raulot France 15 108 0.3× 315 1.1× 653 3.0× 181 1.6× 45 0.4× 28 755
R. A. Bayles United States 8 127 0.3× 171 0.6× 307 1.4× 36 0.3× 67 0.6× 16 603
H.R. Gong China 17 83 0.2× 265 0.9× 465 2.1× 49 0.4× 95 0.9× 41 679
Nathaniel R. Quick United States 13 232 0.6× 178 0.6× 399 1.8× 24 0.2× 32 0.3× 50 654
Kai Zhu China 15 56 0.1× 421 1.4× 269 1.2× 66 0.6× 85 0.8× 45 618
Hyosim Kim United States 15 113 0.3× 203 0.7× 638 2.9× 54 0.5× 28 0.3× 51 738

Countries citing papers authored by Bernd Thomas

Since Specialization
Citations

This map shows the geographic impact of Bernd Thomas's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Bernd Thomas with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Bernd Thomas more than expected).

Fields of papers citing papers by Bernd Thomas

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Bernd Thomas. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Bernd Thomas. The network helps show where Bernd Thomas may publish in the future.

Co-authorship network of co-authors of Bernd Thomas

This figure shows the co-authorship network connecting the top 25 collaborators of Bernd Thomas. A scholar is included among the top collaborators of Bernd Thomas based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Bernd Thomas. Bernd Thomas is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Thomas, Bernd, et al.. (2023). Correlation of Extended Defects with Electrical Yield of SiC MOSFET Devices. Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum. 426. 11–16. 3 indexed citations
2.
Koschatzky, Knut, et al.. (2016). Regional Research Intensive Clusters and Science Parks. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 10 indexed citations
3.
Thomas, Bernd, et al.. (2016). Stromoptimierter Betrieb von KWK-Anlagen durch intelligentes Wärmespeichermanagement. Reutlingen University Academic Bibliography (Reutlingen University). 2 indexed citations
4.
Thomas, Bernd, et al.. (2016). Homoepitaxial Chemical Vapor Deposition of up to 150 μm Thick 4H-SiC Epilayers in a 10×100 mm Batch Reactor. Materials science forum. 858. 129–132. 2 indexed citations
5.
Zhang, Jie, Bernd Thomas, Edward Sanchez, et al.. (2016). Large Area 4H SiC Products for Power Electronic Devices. Materials science forum. 858. 11–14. 9 indexed citations
6.
Wu, Fangzhen, Yu Yang, Balaji Raghothamachar, et al.. (2014). Study of V and Y Shape Frank-Type Stacking Faults Formation in 4H-SiC Epilayer. Materials science forum. 778-780. 332–337. 8 indexed citations
7.
Thomas, Bernd, et al.. (2014). Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary Reactor. Materials science forum. 778-780. 103–108. 5 indexed citations
8.
Wang, H., Michael Dudley, Fangzhen Wu, et al.. (2014). Studies of the Origins of Half-Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiC. Journal of Electronic Materials. 44(5). 1268–1274. 7 indexed citations
9.
Schilling, Klaus, et al.. (2012). Mobility Assistance for Older People. Applied Bionics and Biomechanics. 9(1). 69–83. 7 indexed citations
10.
Thomas, Bernd, et al.. (2008). Influence of Substrate Preparation and Epitaxial Growth Parameters on the Dislocation Densities in 4H-SiC Epitaxial Layers. Materials science forum. 600-603. 143–146. 11 indexed citations
11.
Stein, René, Bernd Thomas, & Christian Hecht. (2007). Epitaxial Growth of 4H-SiC on (000-1) C-Face Substrates by Cold-Wall and Hot-Wall Chemical Vapor Deposition. Materials science forum. 556-557. 89–92. 2 indexed citations
12.
Thomas, Bernd, Christian Hecht, René Stein, & Peter Friedrichs. (2006). Advances in 4H-SiC Homoepitaxy for Production and Development of Power Devices. MRS Proceedings. 911. 2 indexed citations
13.
Schörner, Reinhold, et al.. (2003). To Be ''Snappy'' or Not - a Comparison of the Transient Behaviours of Bipolar SiC-Diodes. Materials science forum. 433-436. 895–900. 3 indexed citations
14.
Thomas, Bernd, et al.. (1996). Phase Transitions during the Deposition of Polycrystalline Iron Pyrite (FeS<sub>2</sub>) - Layers by Low-Pressure Metalorganic Chemical Vapor Deposition. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 51-52. 301–308. 12 indexed citations
15.
Thomas, Bernd, et al.. (1994). Wörterbuch Schulpädagogik : ein nachschlagewerk für Studium und Schulpraxis. 1 indexed citations
16.
Wienecke, M., et al.. (1990). High mobility HgTe and high resistivity CdTe grown by MOVPE on GaAs (001). physica status solidi (a). 121(1). K55–K59. 3 indexed citations
17.
Silber, D., W.‐D. Nowak, W. Wondrak, Bernd Thomas, & H. Berg. (1985). Improved dynamic properties of GTO-thyristors and diodes by proton implantation. 162–165. 12 indexed citations
18.
Rémy, L., A. Pineau, & Bernd Thomas. (1978). Temperature dependence of stacking fault energy in close-packed metals and alloys. Materials Science and Engineering. 36(1). 47–63. 271 indexed citations
19.
Thomas, Bernd, et al.. (1970). On the variation of the intrinsic stacking fault energy with temperature in Fe-18 Cr-12 Ni alloys. physica status solidi (a). 2(4). K217–K220. 39 indexed citations
20.
Doukhan, J. C., N. Doukhan, G. Saada, & Bernd Thomas. (1969). Observation of Dislocations in Tellurium by Transmission Electron Microscopy. physica status solidi (b). 35(2). 835–842. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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