J. A. Van Vechten

7.9k citations

105 papers · 6.4k indexed · 3 hit papers · h-index 33

Electrical and Electronic Engineering top 1%
Atomic and Molecular Physics, and Optics top 0.5%
Materials Chemistry top 1%
Electronic, Optical and Magnetic Materials top 2%
Condensed Matter Physics top 2%

Co-authors: J. C. Phillips T. K. Bergstresser C. D. Thurmond John F. Wager F.W. Saris Raphael Tsu Volker Heine O. Berolo
Topics: Semiconductor materials and interfaces (31 papers)Silicon and Solar Cell Technologies (31 papers)Semiconductor Quantum Structures and Devices (26 papers)
Cited by: Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering Materials Chemistry
Journals: Physical Review Letters Physical review. B, Condensed matter Applied Physics Letters
Partner nations: United States Netherlands Qatar

In The Last Decade

J. A. Van Vechten

102 papers receiving 5.8k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Quantum Dielectric Theory of Electronegativity in Covalent Systems. I. Electronic Dielectric Constant

1969 1.0k citations J. A. Van Vechten Physical Review profile →
Electronic Structures of Semiconductor Alloys

1970 586 citations J. A. Van Vechten et al. Physical review. B, Solid state profile →
Quantum Dielectric Theory of Electronegativity in Covalent Systems. II. Ionization Potentials and Interband Transition Energies

1969 520 citations J. A. Van Vechten Physical Review profile →

Peers

Countries citing papers authored by J. A. Van Vechten

Since Specialization

Citations

This map shows the geographic impact of J. A. Van Vechten's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. A. Van Vechten with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. A. Van Vechten more than expected).

Fields of papers citing papers by J. A. Van Vechten

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. A. Van Vechten. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. A. Van Vechten. The network helps show where J. A. Van Vechten may publish in the future.

Co-authorship network of co-authors of J. A. Van Vechten

This figure shows the co-authorship network connecting the top 25 collaborators of J. A. Van Vechten. A scholar is included among the top collaborators of J. A. Van Vechten based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. A. Van Vechten. J. A. Van Vechten is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Surface treatment effects on atomic diffusion in Si explained without self interstitials 1991 ·Journal of Electronic Materials ·J. A. Van Vechten,U. Schmid,(unknown)	8
2	Modeling of luminescence phase delay for nondestructive characterization of Si wafers 1989 ·Journal of Applied Physics ·Daniel Guidotti,J. S. Batchelder,A. Finkel,(unknown),J. A. Van Vechten	13
3	Reply to ‘‘Comment on ‘Atomic model for theEL2 defect in GaAs’’ 1988 ·Physical review. B, Condensed matter ·John F. Wager,J. A. Van Vechten	1
4	Phosphorous Vacancy Nearest Neighbor Hopping Induced Instabilities in InP Capacitors: II . Computer Simulation 1988 ·Journal of The Electrochemical Society ·(unknown),John F. Wager,J. A. Van Vechten	5
5	Structure of laser-pulse-plasma-induced carbon clusters: Explanation of the magic numbers 1987 ·Physical review. B, Condensed matter ·J. A. Van Vechten,Douglas A. Keszler	22
6	Comment on "Green's-function calculation of the lattice response near the vacancy in Si" 1986 ·Physical review. B, Condensed matter ·J. A. Van Vechten	9
7	Temperature dependence of transverse acoustic phonons in semiconductors 1985 ·Physical review. B, Condensed matter ·J. A. Van Vechten	3
8	Atomic model for theMcenter in InP 1985 ·Physical review. B, Condensed matter ·John F. Wager,J. A. Van Vechten	23
9	Deviations from the one-defect approximation: antistructure in III-V compounds 1984 ·Journal of Physics C Solid State Physics ·J. A. Van Vechten	25
10	BOSE CONDENSATION AND THE ATHERMAL NATURE OF PULSED LASER ANNEALING 1983 ·Le Journal de Physique Colloques ·J. A. Van Vechten	1
11	Electronic Dilation of Si during Pulsed Laser Annealing 1982 ·Japanese Journal of Applied Physics ·J. A. Van Vechten	8
12	Intermixing of an AlAs-GaAs superlattice by Zn diffusion 1982 ·Journal of Applied Physics ·J. A. Van Vechten	93
13	Microscopic Mechanisms of Growth of Dark Line Defects in Double Heterostructure Lasers 1975 ·Journal of The Electrochemical Society ·J. A. Van Vechten	26
14	Enthalpy of vacancy migration in Si and Ge 1974 ·Physical review. B, Solid state ·J. A. Van Vechten	95
15	Effect of Disorder on the Conduction-Band Effective Mass, Valence-Band Spin-Orbit Splitting, and the Direct Band Gap in III-V Alloys 1973 ·Physical review. B, Solid state ·O. Berolo,John C. Woolley,J. A. Van Vechten	102
16	Quantum Dielectric Theory of Electronegativity in Covalent Systems. III. Pressure-Temperature Phase Diagrams, Heats of Mixing, and Distribution Coefficients 1973 ·Physical review. B, Solid state ·J. A. Van Vechten	353
17	Spin-Orbit Splitting in Compositionally Disordered Semiconductors 1972 ·Physical Review Letters ·J. A. Van Vechten,O. Berolo,J. C. Woolley	73
18	Local-Field Effects on Electroreflectance Line Shapes: the Contact Exciton 1972 ·Physical review. B, Solid state ·Richard M. Martin,J. A. Van Vechten,J. E. Rowe,D. E. Aspnes	29
19	Semiconductor–metal phase transformation of tetrahedrally coordinated semiconductors 1971 ·physica status solidi (b) ·J. A. Van Vechten	9
20	Quantum Dielectric Theory of Electronegativity in Covalent Systems. I. Electronic Dielectric Constantbreakdown → 1969 ·Physical Review ·J. A. Van Vechten	1016

About J. A. Van Vechten

J. A. Van Vechten is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry, having authored 105 papers that have together received 6.4k indexed citations. Recurring topics across this work include Semiconductor materials and interfaces (31 papers), Silicon and Solar Cell Technologies (31 papers) and Semiconductor Quantum Structures and Devices (26 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (3.4k citations), Electrical and Electronic Engineering (3.7k citations) and Materials Chemistry (3.0k citations). J. A. Van Vechten has collaborated with scholars based in United States, Netherlands and Qatar. Frequent co-authors include J. C. Phillips, T. K. Bergstresser, C. D. Thurmond, J. C. Phillips, John F. Wager, F.W. Saris, Raphael Tsu, Volker Heine, O. Berolo and Richard M. Martin. Their work appears in journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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