M. W. Bench

687 total citations
19 papers, 585 citations indexed

About

M. W. Bench is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Materials Chemistry. According to data from OpenAlex, M. W. Bench has authored 19 papers receiving a total of 585 indexed citations (citations by other indexed papers that have themselves been cited), including 12 papers in Electrical and Electronic Engineering, 8 papers in Computational Mechanics and 7 papers in Materials Chemistry. Recurrent topics in M. W. Bench's work include Ion-surface interactions and analysis (8 papers), Integrated Circuits and Semiconductor Failure Analysis (8 papers) and Silicon and Solar Cell Technologies (7 papers). M. W. Bench is often cited by papers focused on Ion-surface interactions and analysis (8 papers), Integrated Circuits and Semiconductor Failure Analysis (8 papers) and Silicon and Solar Cell Technologies (7 papers). M. W. Bench collaborates with scholars based in United States, Slovenia and France. M. W. Bench's co-authors include I.M. Robertson, I. Jenčič, Jason R. Heffelfinger, Mark A. Kirk, C. Barry Carter, Marquis A. Kirk, J.S. Vetrano, Peter H. McMurry, J. Heberlein and Guowen Li and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Langmuir.

In The Last Decade

M. W. Bench

18 papers receiving 570 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. W. Bench United States 11 290 285 235 135 64 19 585
S. R. Nagel United States 11 333 1.1× 215 0.8× 112 0.5× 181 1.3× 74 1.2× 30 703
Marie‐Laure David France 17 571 2.0× 358 1.3× 154 0.7× 134 1.0× 66 1.0× 61 830
Hiroshi Takaoka Japan 14 246 0.8× 176 0.6× 106 0.5× 181 1.3× 53 0.8× 22 438
R.H. Milne United Kingdom 13 246 0.8× 224 0.8× 75 0.3× 211 1.6× 77 1.2× 25 590
Klaus‐Peter Lieb Germany 13 185 0.6× 242 0.8× 213 0.9× 92 0.7× 30 0.5× 29 483
P.A.C. Whiffin United Kingdom 17 429 1.5× 473 1.7× 86 0.4× 323 2.4× 83 1.3× 28 803
Qiangmin Wei China 15 246 0.8× 435 1.5× 290 1.2× 78 0.6× 110 1.7× 34 664
Oleg A. Louchev Japan 18 262 0.9× 563 2.0× 140 0.6× 280 2.1× 208 3.3× 60 925
J. D. Kuptsis United States 11 230 0.8× 189 0.7× 73 0.3× 117 0.9× 37 0.6× 19 400
L. Pham Van France 14 214 0.7× 340 1.2× 43 0.2× 214 1.6× 106 1.7× 18 576

Countries citing papers authored by M. W. Bench

Since Specialization
Citations

This map shows the geographic impact of M. W. Bench's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. W. Bench with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. W. Bench more than expected).

Fields of papers citing papers by M. W. Bench

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. W. Bench. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. W. Bench. The network helps show where M. W. Bench may publish in the future.

Co-authorship network of co-authors of M. W. Bench

This figure shows the co-authorship network connecting the top 25 collaborators of M. W. Bench. A scholar is included among the top collaborators of M. W. Bench based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. W. Bench. M. W. Bench is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

19 of 19 papers shown
1.
Bench, M. W., I.M. Robertson, Mark A. Kirk, & I. Jenčič. (2000). Production of amorphous zones in GaAs by the direct impact of energetic heavy ions. Journal of Applied Physics. 87(1). 49–56. 34 indexed citations
2.
Jaeger, David A., et al.. (1997). Fibers and Other Aggregates of ω-Substituted Surfactants. Langmuir. 13(21). 5563–5569. 19 indexed citations
3.
Bench, M. W., Paul G. Kotula, & C. Barry Carter. (1997). Influence of the nature of the (0001) alumina surface on thin film growth. Surface Science. 391(1-3). 183–195. 10 indexed citations
4.
Heffelfinger, Jason R., M. W. Bench, & C. Barry Carter. (1997). Steps and the structure of the (0001) α-alumina surface. Surface Science. 370(1). L168–L172. 92 indexed citations
5.
Jenčič, I., M. W. Bench, I.M. Robertson, & Mark A. Kirk. (1995). Electron-beam-induced crystallization of isolated amorphous regions in Si, Ge, GaP, and GaAs. Journal of Applied Physics. 78(2). 974–982. 169 indexed citations
6.
Bench, M. W., et al.. (1995). AFM study of the dynamics of α-alumina surface faceting during high-temperature processing. Proceedings annual meeting Electron Microscopy Society of America. 53. 334–335.
7.
Bench, M. W., et al.. (1995). Characterization of iron based precipitates in GaAs layers grown by molecular-beam epitaxy. Applied Physics Letters. 66(18). 2400–2402. 1 indexed citations
8.
Rao, Nagaraja, et al.. (1995). Synthesis of nanophase silicon, carbon, and silicon carbide powders using a plasma expansion process. Journal of materials research/Pratt's guide to venture capital sources. 10(8). 2073–2084. 30 indexed citations
9.
Heffelfinger, Jason R., et al.. (1995). On the faceting of ceramic surfaces. Surface Science. 343(1-2). L1161–L1166. 74 indexed citations
10.
Jenčič, I., M. W. Bench, I.M. Robertson, & Mark A. Kirk. (1994). Evidence for Electronic Energy Loss Processes Stimulating Solid Phase Epitaxial Regrowth of Spatially Isolated Amorphous Regions in Semiconductor Systems. MRS Proceedings. 373. 1 indexed citations
11.
Bench, M. W., et al.. (1993). On the Evolution of Copper Oxide Films Grown on α-A12O3 By Pulsed-Laser Ablation. MRS Proceedings. 317. 1 indexed citations
12.
Bench, M. W.. (1992). Transmission electron microscopy investigation of ion implantation damage in GaAs and other semiconductors. PhDT. 2 indexed citations
13.
Bench, M. W., et al.. (1992). On the suitability of the down-zone imaging technique to the study of radiation damage. Philosophical Magazine Letters. 66(1). 39–45. 21 indexed citations
14.
Jenčič, I., M. W. Bench, I.M. Robertson, & Marquis A. Kirk. (1991). A comparison of the amorphization induced in AlxGa1−xAs and GaAs by heavy-ion irradiation. Journal of Applied Physics. 69(3). 1287–1293. 39 indexed citations
15.
Bench, M. W., I.M. Robertson, & Marquis A. Kirk. (1991). Transmission electron microscopy investigation of the damage produced in individual displacement cascades in GaAs and GaP. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 59-60. 372–376. 38 indexed citations
16.
Jenčič, I., et al.. (1991). A comparison of the rates of amorphization in the Al Ga1−As/GaAs system. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 59-60. 458–461. 7 indexed citations
17.
Bench, M. W., I.M. Robertson, & Mark A. Kirk. (1991). Energetic Electron Beam Induced Recrystallization of Ion Implantation Damage in Semiconductors. MRS Proceedings. 235. 7 indexed citations
18.
Vetrano, J.S., M. W. Bench, I.M. Robertson, & Marquis A. Kirk. (1989). In situ studies of ion irradiation effects in an electron microscope. Metallurgical Transactions A. 20(12). 2673–2680. 35 indexed citations
19.
Bench, M. W., I.M. Robertson, & Mark A. Kirk. (1988). In Situ TEM Observations of Heavy Ion Damage in Gallium Arsenide. MRS Proceedings. 100. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Rankless by CCL
2026