M. Vanzi

2.5k total citations · 1 hit paper
116 papers, 1.8k citations indexed

About

M. Vanzi is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, M. Vanzi has authored 116 papers receiving a total of 1.8k indexed citations (citations by other indexed papers that have themselves been cited), including 94 papers in Electrical and Electronic Engineering, 43 papers in Atomic and Molecular Physics, and Optics and 20 papers in Condensed Matter Physics. Recurrent topics in M. Vanzi's work include Semiconductor materials and devices (34 papers), Integrated Circuits and Semiconductor Failure Analysis (31 papers) and Semiconductor Quantum Structures and Devices (27 papers). M. Vanzi is often cited by papers focused on Semiconductor materials and devices (34 papers), Integrated Circuits and Semiconductor Failure Analysis (31 papers) and Semiconductor Quantum Structures and Devices (27 papers). M. Vanzi collaborates with scholars based in Italy, France and United States. M. Vanzi's co-authors include C. Lombardi, Stefano Manzini, Antonio Saporito, G. Mura, Enrico Zanoni, Gaudenzio Meneghesso, Matteo Meneghini, F. Fantini, Giulio Pozzi and Lorenzo Roberto Trevisanello and has published in prestigious journals such as Physical Review Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

M. Vanzi

108 papers receiving 1.7k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

A physically based mobility model for numerical simulation of nonplanar devices

1988 592 citations C. Lombardi, M. Vanzi et al. profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
M. Vanzi Italy	17	1.4k	466	417	226	173	116	1.8k
H. Ahmed United Kingdom	19	949 0.7×	97 0.2×	502 1.2×	308 1.4×	577 3.3×	74	1.6k
Paul Pukite United States	18	702 0.5×	229 0.5×	973 2.3×	396 1.8×	216 1.2×	40	1.5k
Fumihiko Uesugi Japan	16	576 0.4×	76 0.2×	328 0.8×	350 1.5×	103 0.6×	73	918
Rui Zhao China	25	728 0.5×	105 0.2×	852 2.0×	384 1.7×	612 3.5×	122	1.6k
M. T. Yin United States	15	465 0.3×	282 0.6×	1.3k 3.1×	1.1k 5.0×	132 0.8×	23	2.2k
Takashi Honda Japan	20	1.2k 0.9×	494 1.1×	2.3k 5.6×	625 2.8×	133 0.8×	173	3.1k
R. Rottmayer United States	10	478 0.3×	293 0.6×	1.3k 3.2×	472 2.1×	717 4.1×	28	2.1k
Edward C. Gage United States	18	585 0.4×	289 0.6×	1.5k 3.7×	447 2.0×	885 5.1×	48	2.4k
Ádám Papp Germany	16	656 0.5×	139 0.3×	539 1.3×	74 0.3×	102 0.6×	46	976

Countries citing papers authored by M. Vanzi

Since Specialization

Citations

This map shows the geographic impact of M. Vanzi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Vanzi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Vanzi more than expected).

Fields of papers citing papers by M. Vanzi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Vanzi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Vanzi. The network helps show where M. Vanzi may publish in the future.

Co-authorship network of co-authors of M. Vanzi

This figure shows the co-authorship network connecting the top 25 collaborators of M. Vanzi. A scholar is included among the top collaborators of M. Vanzi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Vanzi. M. Vanzi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

1.

Vanzi, M. & G. Mura. (2020). Peculiar failure mechanisms in GaN power transistors. Microelectronics Reliability. 114. 113896–113896.

2.

Vanzi, M., et al.. (2018). Further improvements of an extended Hakki-Paoli method. Microelectronics Reliability. 88-90. 859–863. 2 indexed citations

3.

Vanzi, M., et al.. (2016). Side-Mode Excitation in Single-Mode Laser Diodes. IEEE Transactions on Device and Materials Reliability. 16(2). 158–163. 2 indexed citations

4.

Mura, G., et al.. (2014). FIB-induced electro-optical alterations in a DFB InP laser diode. Microelectronics Reliability. 54(9-10). 2151–2153. 3 indexed citations

5.

Meneghini, Matteo, Nicola Trivellin, G. Mura, et al.. (2011). Chip and package-related degradation of high power white LEDs. Microelectronics Reliability. 52(5). 804–812. 44 indexed citations

6.

Caddeo, Claudia, et al.. (2010). Optimized "Design of Experiments" Methodology for the Prediction of Phototransistor Degradation in a Space Environment. 1 indexed citations

7.

Mura, G. & M. Vanzi. (2009). Lot reliability issues in commercial off the shelf (COTS) microelectronic devices. Microelectronics Reliability. 49(9-11). 1196–1199. 3 indexed citations

8.

Caddeo, Claudia, et al.. (2009). Implementation of a “Design of Experiments” Methodology for the Prediction of Phototransistor Degradation in a Space Environment. IEEE Transactions on Nuclear Science. 56(4). 2465–2472. 2 indexed citations

9.

Mura, G., et al.. (2008). Sulfur-contamination of high power white LED. Microelectronics Reliability. 48(8-9). 1208–1211. 22 indexed citations

10.

Pintus, Ruggero, et al.. (2008). An Automatic Alignment Procedure for a Four-Source Photometric Stereo Technique Applied to Scanning Electron Microscopy. IEEE Transactions on Instrumentation and Measurement. 57(5). 989–996. 16 indexed citations

11.

Pintus, Ruggero, et al.. (2008). Improvements in automated photometric stereo 3D SEM. Microscopy and Microanalysis. 14(S2). 608–609. 1 indexed citations

12.

Pintus, Ruggero, et al.. (2006). An Automatic Alignment Procedure for a 4-Source Photometric Stereo Technique applied to Scanning Electron Microscopy. 1. 1278–1283. 4 indexed citations

13.

Kuchenbecker, James A., et al.. (2003). Investigation of the burn-in effect in microwave GaInP/GaAs HBTs by means of numerical simulations. 378. 260–265.

14.

Vanzi, M., et al.. (1999). A simpler method for life-testing laser diodes. Microelectronics Reliability. 39(6-7). 1067–1071. 2 indexed citations

15.

Bonfiglio, Annalisa, et al.. (1998). REDR-based kinetics for line defects leading to sudden failures in 980 nm SL SQW InGaAs laser diodes. 113–118. 3 indexed citations

16.

Vanzi, M., et al.. (1996). Charge Diffusion and Reciprocity Theorems: A Direct Approach to EBIC of Ridge Laser Diodes. Proceedings - International Symposium for Testing and Failure Analysis. 30811. 233–238. 6 indexed citations

17.

Scorzoni, A., et al.. (1990). The circular resistor (CR)-a novel structure for the analysis of VLSI contacts. IEEE Transactions on Electron Devices. 37(7). 1750–1757. 2 indexed citations

18.

Canali, Claudio, et al.. (1987). Effects of High Current and Temperature in Power MESFET Metallizations. European Solid-State Device Research Conference. 613–616. 1 indexed citations

19.

Lombardi, C., P. Olivo, B. Riccò, E. Sangiorgi, & M. Vanzi. (1983). Two-dimensional effects in hot-electron modified MOSFET's. IEEE Transactions on Electron Devices. 30(10). 1416–1419. 5 indexed citations

20.

Lombardi, C., P. Olivo, B. Riccò, E. Sangiorgi, & M. Vanzi. (1982). Hot electrons in MOS transistors: Lateral distribution of the trapped oxide charge. IEEE Electron Device Letters. 3(7). 215–217. 13 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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