Hao‐Hsiung Lin

958 total citations
82 papers, 773 citations indexed

About

Hao‐Hsiung Lin is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, Hao‐Hsiung Lin has authored 82 papers receiving a total of 773 indexed citations (citations by other indexed papers that have themselves been cited), including 75 papers in Atomic and Molecular Physics, and Optics, 72 papers in Electrical and Electronic Engineering and 18 papers in Materials Chemistry. Recurrent topics in Hao‐Hsiung Lin's work include Semiconductor Quantum Structures and Devices (70 papers), Advanced Semiconductor Detectors and Materials (40 papers) and Semiconductor Lasers and Optical Devices (18 papers). Hao‐Hsiung Lin is often cited by papers focused on Semiconductor Quantum Structures and Devices (70 papers), Advanced Semiconductor Detectors and Materials (40 papers) and Semiconductor Lasers and Optical Devices (18 papers). Hao‐Hsiung Lin collaborates with scholars based in Taiwan, China and United States. Hao‐Hsiung Lin's co-authors include Y. F. Chen, Fu-Yu Chang, J. C. Fan, Yan-Ting Lin, Yu‐Tzu Dai, S. C. Lee, Ray‐Ming Lin, Si‐Chen Lee, Ching-Chou Wu and Yu-Chen Lin and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Hao‐Hsiung Lin

78 papers receiving 751 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Hao‐Hsiung Lin Taiwan 15 637 632 234 151 117 82 773
A. Lenz Germany 17 573 0.9× 736 1.2× 255 1.1× 113 0.7× 196 1.7× 41 834
A. Konkar United States 14 535 0.8× 561 0.9× 254 1.1× 140 0.9× 157 1.3× 25 729
G. Saint‐Girons France 14 550 0.9× 506 0.8× 227 1.0× 50 0.3× 86 0.7× 43 654
Byung-Doo Choe South Korea 14 437 0.7× 432 0.7× 209 0.9× 94 0.6× 56 0.5× 52 559
E.-M. Pavelescu Romania 18 680 1.1× 721 1.1× 200 0.9× 317 2.1× 72 0.6× 70 864
I. V. Sedova Russia 15 886 1.4× 902 1.4× 620 2.6× 70 0.5× 124 1.1× 154 1.1k
T. Takebe Japan 14 458 0.7× 371 0.6× 212 0.9× 79 0.5× 115 1.0× 40 588
P. Rotella United States 12 426 0.7× 422 0.7× 164 0.7× 64 0.4× 86 0.7× 29 538
G. Walter United States 21 1.2k 1.9× 1.0k 1.7× 172 0.7× 84 0.6× 47 0.4× 62 1.3k
T. Geppert Germany 14 391 0.6× 304 0.5× 116 0.5× 120 0.8× 84 0.7× 28 498

Countries citing papers authored by Hao‐Hsiung Lin

Since Specialization
Citations

This map shows the geographic impact of Hao‐Hsiung Lin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hao‐Hsiung Lin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hao‐Hsiung Lin more than expected).

Fields of papers citing papers by Hao‐Hsiung Lin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hao‐Hsiung Lin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hao‐Hsiung Lin. The network helps show where Hao‐Hsiung Lin may publish in the future.

Co-authorship network of co-authors of Hao‐Hsiung Lin

This figure shows the co-authorship network connecting the top 25 collaborators of Hao‐Hsiung Lin. A scholar is included among the top collaborators of Hao‐Hsiung Lin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hao‐Hsiung Lin. Hao‐Hsiung Lin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Feng, Zhe Chuan, Hao‐Hsiung Lin, Jin‐Ming Chen, et al.. (2023). Optical, surface, and structural studies of InN thin films grown on sapphire by molecular beam epitaxy. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 41(5). 3 indexed citations
2.
Talwar, Devki N., P. Becla, Hao‐Hsiung Lin, & Zhe Chuan Feng. (2021). Assessment of intrinsic and doped defects in Bridgman grown Cd1-xZnxTe alloys. Materials Science and Engineering B. 269. 115160–115160. 4 indexed citations
3.
Lin, Hao‐Hsiung, et al.. (2020). Simulation on the electric field effect of Bi thin film. SHILAP Revista de lepidopterología. 2. 28–34. 1 indexed citations
4.
Talwar, Devki N., Lingyu Wan, Chin‐Che Tin, Hao‐Hsiung Lin, & Zhe Chuan Feng. (2017). Spectroscopic phonon and extended x-ray absorption fine structure measurements on 3C-SiC/Si (001) epifilms. Applied Surface Science. 427. 302–310. 7 indexed citations
5.
Hsu, Hung‐Pin, Yan-Ting Lin, & Hao‐Hsiung Lin. (2012). Evidence of Nitrogen Reorganization in GaAsSbN Alloys. Japanese Journal of Applied Physics. 51(2R). 22605–22605. 6 indexed citations
6.
Huang, Ying‐Sheng, et al.. (2012). Structural and electronic properties of GaAs0.64P0.19Sb0.17 on GaAs. Applied Physics Letters. 101(25).
7.
Yang, Yao‐Joe, et al.. (2012). Twinning in GaAsSb grown on (1 1 1)B GaAs by molecular beam epitaxy. Journal of Physics D Applied Physics. 46(3). 35306–35306. 8 indexed citations
8.
Feng, Zhe Chuan, et al.. (2011). Extended X-ray absorption fine structure of InAsPSb. 1–2. 2 indexed citations
9.
Lin, Yan-Ting, et al.. (2008). Energy gap reduction in dilute nitride GaAsSbN. Applied Physics Letters. 93(17). 41 indexed citations
10.
Hang, Da‐Ren, et al.. (2002). Shubnikov de Haas oscillations of two-dimensional electron gas in an InAsN/InGaAs single quantum well. Semiconductor Science and Technology. 17(9). 999–1003. 8 indexed citations
11.
Lin, Hao‐Hsiung, et al.. (2002). Bulk InAsN films grown by plasma-assisted gas source molecular beam epitaxy. NTUR (臺灣機構典藏). 76. 555–558. 1 indexed citations
12.
Lin, Ray‐Ming, et al.. (2001). Blueshift of photoluminescence peak in ten periods InAs quantum dots superlattice. Journal of Crystal Growth. 227-228. 1034–1038. 4 indexed citations
13.
Lin, Hao‐Hsiung, et al.. (2001). Growth of InAsN/InGaAs(P) quantum wells on InP by gas source molecular beam epitaxy. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 19(1). 202–206. 17 indexed citations
14.
Fan, J. C., et al.. (1999). Above-barrier states in GaAs–AlGaAs superlattices studied by photoconductivity and photoreflectance. Journal of Applied Physics. 86(3). 1460–1462. 15 indexed citations
15.
Fan, J. C., et al.. (1998). Photoconductivity in self-organized InAs quantum dots. Journal of Applied Physics. 84(9). 5351–5353. 5 indexed citations
16.
Chan, Chun-an, et al.. (1998). Characterization of piezoelectric (111)B InGaAs/GaAs p-i-n quantum well structures using photoreflectance spectroscopy. Applied Physics Letters. 72(10). 1208–1210. 19 indexed citations
17.
Kang, Jin U, Jacob B. Khurgin, C. C. Yang, Hao‐Hsiung Lin, & G. I. Stegeman. (1998). Two-photon transitions between bound-to-continuum states in AlGaAs/GaAs multiple quantum well. Applied Physics Letters. 73(25). 3638–3640. 6 indexed citations
18.
Hwang, J. S., et al.. (1997). Built-in electric field and surface Fermi level in InP surface-intrinsic n+ structures by modulation spectroscopy. Journal of Applied Physics. 82(8). 3888–3890. 12 indexed citations
19.
Lin, Hao‐Hsiung, et al.. (1995). The incorporation behavior of As and P in GaInAsP (λ ≈ μm) on InP grown by gas source molecular beam epitaxy. Journal of Crystal Growth. 155(1-2). 16–22. 6 indexed citations
20.
Chang, Tien-Chih, et al.. (1993). Effect of supersaturation on the interface abruptness of AlGaAs/GaAs/AlGaAs quantum well grown by liquid phase epitaxy. Journal of Applied Physics. 74(5). 3464–3469. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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