H. Thibierge

542 total citations
20 papers, 468 citations indexed

About

H. Thibierge is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, H. Thibierge has authored 20 papers receiving a total of 468 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 17 papers in Atomic and Molecular Physics, and Optics and 5 papers in Materials Chemistry. Recurrent topics in H. Thibierge's work include Semiconductor Quantum Structures and Devices (17 papers), Semiconductor materials and devices (8 papers) and Advanced Semiconductor Detectors and Materials (8 papers). H. Thibierge is often cited by papers focused on Semiconductor Quantum Structures and Devices (17 papers), Semiconductor materials and devices (8 papers) and Advanced Semiconductor Detectors and Materials (8 papers). H. Thibierge collaborates with scholars based in France. H. Thibierge's co-authors include R. Azoulay, Alain Brenac, E. V. K. Rao, F. Alexandre, F. Brillouet, J.L. Benchimol, G. Le Roux, M. Juhel, Leon J. Goldstein and C. Daguet and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Non-Crystalline Solids.

In The Last Decade

H. Thibierge

19 papers receiving 413 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H. Thibierge France 10 309 273 212 122 35 20 468
P C Jaussaud France 13 208 0.7× 189 0.7× 114 0.5× 89 0.7× 16 0.5× 18 361
B. V. Dutt United States 14 437 1.4× 395 1.4× 218 1.0× 48 0.4× 19 0.5× 35 584
Shang-Yuan Ren United States 8 260 0.8× 183 0.7× 259 1.2× 53 0.4× 11 0.3× 15 395
C. Ance France 11 359 1.2× 199 0.7× 242 1.1× 24 0.2× 26 0.7× 35 425
Hisashi Katahama Japan 13 423 1.4× 278 1.0× 186 0.9× 38 0.3× 8 0.2× 37 521
E. Garfunkel United States 7 403 1.3× 94 0.3× 244 1.2× 25 0.2× 62 1.8× 8 466
D. Bahnck United States 10 309 1.0× 213 0.8× 128 0.6× 20 0.2× 64 1.8× 21 423
R. W. Haisty United States 10 198 0.6× 139 0.5× 121 0.6× 53 0.4× 7 0.2× 17 291
Christopher Nicklaw United States 10 595 1.9× 65 0.2× 172 0.8× 87 0.7× 24 0.7× 11 681
Leandro R. Tessler Brazil 11 357 1.2× 83 0.3× 449 2.1× 41 0.3× 22 0.6× 57 529

Countries citing papers authored by H. Thibierge

Since Specialization
Citations

This map shows the geographic impact of H. Thibierge's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Thibierge with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Thibierge more than expected).

Fields of papers citing papers by H. Thibierge

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Thibierge. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Thibierge. The network helps show where H. Thibierge may publish in the future.

Co-authorship network of co-authors of H. Thibierge

This figure shows the co-authorship network connecting the top 25 collaborators of H. Thibierge. A scholar is included among the top collaborators of H. Thibierge based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Thibierge. H. Thibierge is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Rao, E. V. K., M. Allovon, M. Juhel, et al.. (1997). Evaluation of the properties of hydrogenated InP/InGaAsP double heterostructure waveguides. Materials Science and Engineering B. 44(1-3). 117–120. 6 indexed citations
3.
Rao, E. V. K., et al.. (1995). Controlled disordering of compressively strained InGaAsP multiple quantum wells under SiO:P encapsulant and application to laser-modulator integration. Journal of Applied Physics. 78(9). 5638–5641. 8 indexed citations
4.
Ougazzaden, A., et al.. (1995). An Optical Study of Interdiffusion in Strained InP-Based Heterostructures. Japanese Journal of Applied Physics. 34(1R). 36–36. 4 indexed citations
5.
Ougazzaden, A., et al.. (1995). Cation interdiffusion in InGaAsP/InGaAsP multiple quantum wells with constant P/As ratio. Applied Physics Letters. 66(6). 718–720. 10 indexed citations
6.
Rao, E. V. K., et al.. (1995). New encapsulant source for III–V quantum well disordering. Applied Physics Letters. 66(4). 472–474. 26 indexed citations
7.
Rao, E. V. K., et al.. (1993). Highly thermally stable electrical compensation in oxygen implanted p-InAlAs. Applied Physics Letters. 62(8). 867–869. 6 indexed citations
8.
Rao, E. V. K., et al.. (1993). Long range disordering of GaAs-AlGaAs multiquantum wells by isoelectronic antimony implants. Applied Physics Letters. 62(17). 2096–2098. 5 indexed citations
9.
Benchimol, J.L., et al.. (1992). Chemical beam epitaxy of AlGaAs and AlInAs using trimethylamine alane precursor. Journal of Crystal Growth. 120(1-4). 189–194. 9 indexed citations
10.
Rao, E. V. K., et al.. (1991). Deep-level photoluminescence emission in heavily Be-doped CBE-grown InP: an explanation of low Be acceptor activity. Semiconductor Science and Technology. 6(2). 125–128. 1 indexed citations
11.
Benchimol, J.L., G. Le Roux, H. Thibierge, et al.. (1991). Incorporation of group III and group V elements in chemical beam epitaxy of GaInAsP alloys. Journal of Crystal Growth. 107(1-4). 978–981. 42 indexed citations
12.
Rao, E. V. K., et al.. (1990). Enhancement of group III atom interdiffusion by nondopant oxygen implants in In0.53Ga0.47As-In0.52Al0.48As multiquantum wells. Applied Physics Letters. 57(21). 2190–2192. 10 indexed citations
13.
14.
Rao, E. V. K., et al.. (1987). Influence of boron on tin induced interdiffusion in GaAs-Ga0.72Al0.28As superlattices. Applied Physics Letters. 50(10). 588–590. 26 indexed citations
15.
Mircéa, A., R. Mellet, B. Rose, et al.. (1986). The growth and characterization of device quality InP/ Ga1-xinxasyp1-y double heterostructures by atmospheric-pressure MOVPE using trimethylindium. Journal of Electronic Materials. 15(4). 205–213. 26 indexed citations
16.
Rao, E. V. K., H. Thibierge, F. Brillouet, F. Alexandre, & R. Azoulay. (1985). Disordering of Ga1−xAlxAs-GaAs quantum well structures by donor sulfur diffusion. Applied Physics Letters. 46(9). 867–869. 53 indexed citations
17.
Alexandre, F., et al.. (1985). Investigation of surface roughness of molecular beam epitaxy Ga1−xAlxAs layers and its consequences on GaAs/Ga1−xAlxAs heterostructures. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 3(4). 950–955. 53 indexed citations
18.
Duhamel, N., E. V. K. Rao, M. Gauneau, H. Thibierge, & A. Mircéa. (1983). Silicon implantation in semi-insulating bulk InP; Electrical and photoluminescence measurements. Journal of Crystal Growth. 64(1). 186–193. 16 indexed citations
19.
Rao, E. V. K., M. Quillec, J.L. Benchimol, & H. Thibierge. (1980). Photoluminescence study of perturbed growth of InP on quaternary layers in InGaAsP-InP double heterostructures. Applied Physics Letters. 37(2). 228–231. 7 indexed citations
20.
Azoulay, R., H. Thibierge, & Alain Brenac. (1975). Devitrification characteristics of Ge Se1− glasses. Journal of Non-Crystalline Solids. 18(1). 33–53. 159 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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