J.L. Benchimol

1.2k total citations
85 papers, 912 citations indexed

About

J.L. Benchimol is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, J.L. Benchimol has authored 85 papers receiving a total of 912 indexed citations (citations by other indexed papers that have themselves been cited), including 75 papers in Electrical and Electronic Engineering, 59 papers in Atomic and Molecular Physics, and Optics and 10 papers in Materials Chemistry. Recurrent topics in J.L. Benchimol's work include Semiconductor Quantum Structures and Devices (54 papers), Semiconductor materials and devices (25 papers) and Semiconductor Lasers and Optical Devices (24 papers). J.L. Benchimol is often cited by papers focused on Semiconductor Quantum Structures and Devices (54 papers), Semiconductor materials and devices (25 papers) and Semiconductor Lasers and Optical Devices (24 papers). J.L. Benchimol collaborates with scholars based in France, United States and United Kingdom. J.L. Benchimol's co-authors include F. Alexandre, Yang Gao, M. Quillec, G. Le Roux, Nobuhiko P. Kobayashi, C. Daguet, C. Dubon‐Chevallier, M. Riet, B. Sermage and E. V. K. Rao and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Journal of Solid-State Circuits.

In The Last Decade

J.L. Benchimol

82 papers receiving 814 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J.L. Benchimol France 16 739 640 166 121 87 85 912
J.J. Brown United States 15 767 1.0× 221 0.3× 98 0.6× 89 0.7× 90 1.0× 41 846
Y. Yamashita Japan 12 692 0.9× 429 0.7× 66 0.4× 116 1.0× 118 1.4× 40 778
A. Torres Spain 13 562 0.8× 337 0.5× 225 1.4× 26 0.2× 150 1.7× 51 738
I. Ogura Japan 17 811 1.1× 575 0.9× 82 0.5× 20 0.2× 83 1.0× 81 965
A. Winden Germany 12 209 0.3× 233 0.4× 138 0.8× 146 1.2× 175 2.0× 34 455
G. González de la Cruz Mexico 15 197 0.3× 204 0.3× 277 1.7× 31 0.3× 162 1.9× 73 603
J. S. Moon United States 14 645 0.9× 348 0.5× 541 3.3× 265 2.2× 187 2.1× 53 979
Mitsuru Sugo Japan 18 1.0k 1.4× 827 1.3× 157 0.9× 99 0.8× 207 2.4× 53 1.2k
B. P. Van der Gaag United States 15 456 0.6× 538 0.8× 124 0.7× 121 1.0× 99 1.1× 33 654
R. Fritz Germany 9 189 0.3× 181 0.3× 65 0.4× 52 0.4× 55 0.6× 19 349

Countries citing papers authored by J.L. Benchimol

Since Specialization
Citations

This map shows the geographic impact of J.L. Benchimol's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.L. Benchimol with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.L. Benchimol more than expected).

Fields of papers citing papers by J.L. Benchimol

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.L. Benchimol. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.L. Benchimol. The network helps show where J.L. Benchimol may publish in the future.

Co-authorship network of co-authors of J.L. Benchimol

This figure shows the co-authorship network connecting the top 25 collaborators of J.L. Benchimol. A scholar is included among the top collaborators of J.L. Benchimol based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.L. Benchimol. J.L. Benchimol is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Benchimol, J.L., et al.. (2003). Millimeter-Wave InP/InGaAs Photo-HBT and Its Application to Optoelectronic Integrated Circuits. IEICE Transactions on Electronics. 86(7). 1299–1310. 3 indexed citations
2.
Blayac, Sylvain, M. Riet, J.L. Benchimol, et al.. (2003). MSI InP/InGaAs DHBT technology: beyond 40 Gbit/s circuits. 51–54. 27 indexed citations
3.
Sermage, B., et al.. (2002). Carrier lifetime in carbon doped In/sub 0.53/Ga/sub 0.47/As. xvi. 572–575. 1 indexed citations
4.
5.
Godin, J., M. Riet, Sylvain Blayac, et al.. (2002). Improved InGaAs/InP DHBT technology for 40 Gbit/s optical communication circuits. 77–80. 5 indexed citations
6.
Godin, J., Paulo André, J.L. Benchimol, et al.. (2002). A InP DHBT technology for high bit-rate optical communications circuits. 219–222. 1 indexed citations
7.
André, Paulo, Sylvain Blayac, J.L. Benchimol, et al.. (2001). InGaAs/InP DHBT technology and design methodology for over 40 Gb/s optical communication circuits. IEEE Journal of Solid-State Circuits. 36(9). 1321–1327. 15 indexed citations
8.
Capart, R., et al.. (1999). Modelling of sugar drying in a countercurrent cascading rotary dryer from stationary profiles of temperature and moisture. Journal of Food Engineering. 41(3-4). 193–201. 12 indexed citations
9.
Aniel, F., J.L. Benchimol, M. Riet, et al.. (1999). Noise parameters of InP-based double heterojunction base-collector self-aligned bipolar transistors. IEEE Microwave and Guided Wave Letters. 9(5). 195–197. 11 indexed citations
10.
Blayac, Sylvain, et al.. (1998). Geometry effects on RF performances on InP DHBTs for ultrafast integrated circuits. European Solid-State Device Research Conference. 540–543. 1 indexed citations
11.
Benchimol, J.L., et al.. (1998). Beneficial Contribution of Compositionally In(x)Ga(1-x)As Graded Base on InP Double Heterojunction Bipolar Transistors (DHBT's) for Very High Speed Transmission Circuits. European Solid-State Device Research Conference. 404–407. 2 indexed citations
12.
Benchimol, J.L., et al.. (1998). CBE growth of carbon doped InGaAs/InP HBTs for 25Gbit/s circuits. Journal of Crystal Growth. 188(1-4). 349–354. 7 indexed citations
13.
Alexandre, F., et al.. (1996). Selective area chemical beam epitaxy for butt-coupling integration. Journal of Crystal Growth. 164(1-4). 314–320. 12 indexed citations
14.
Benchimol, J.L., et al.. (1996). CBE growth of InGaAs(P) alloys using TDMAAs and TBP. Journal of Crystal Growth. 164(1-4). 122–124. 1 indexed citations
15.
Benchimol, J.L., et al.. (1995). High growth rate of III–V compounds by free carrier gas chemical beam epitaxy. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 13(1). 55–58. 9 indexed citations
16.
Alexandre, F., et al.. (1994). Quasi-planar GaAs heterojunction bipolar transistor device entirely grown by chemical beam epitaxy. Journal of Crystal Growth. 136(1-4). 235–240. 6 indexed citations
17.
Dubon‐Chevallier, C., et al.. (1992). Innovative passivated heterojunction bipolar transistor grown by CBE. Electronics Letters. 28(25). 2308–2309. 7 indexed citations
18.
Benchimol, J.L., et al.. (1992). Very high gain in carbon-doped base heterojunction bipolar transistor grown by chemical beam epitaxy. Electronics Letters. 28(14). 1344–1345. 26 indexed citations
19.
Benchimol, J.L., D. Scalbert, & M. Quillec. (1985). Electrical characterization of high purity InGaAsP alloys. Journal of Electronic Materials. 14(6). 655–666. 2 indexed citations
20.
Benchimol, J.L., M. Quillec, & S. Slempkès. (1983). Improved mobility in InxGa1−xAsyP1−y alloys using high temperature liquid phase epitaxy. Journal of Crystal Growth. 64(1). 96–100. 15 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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