H. Kappert

724 total citations
19 papers, 564 citations indexed

About

H. Kappert is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Mechanics. According to data from OpenAlex, H. Kappert has authored 19 papers receiving a total of 564 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Electrical and Electronic Engineering, 5 papers in Atomic and Molecular Physics, and Optics and 4 papers in Computational Mechanics. Recurrent topics in H. Kappert's work include Silicon and Solar Cell Technologies (8 papers), Semiconductor materials and devices (8 papers) and Thin-Film Transistor Technologies (5 papers). H. Kappert is often cited by papers focused on Silicon and Solar Cell Technologies (8 papers), Semiconductor materials and devices (8 papers) and Thin-Film Transistor Technologies (5 papers). H. Kappert collaborates with scholars based in Germany, Brazil and United States. H. Kappert's co-authors include A. E. Widmer, G. Harbeke, L. Krausbauer, E. F. Steigmeier, G. H. Schwuttke, Kai Yang, Klaus Heidemann, E. te Kaat, Yiannos Manoli and Efrat Spiegel and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and Applied Physics A.

In The Last Decade

H. Kappert

19 papers receiving 527 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
H. Kappert Germany	13	470	256	103	101	81	19	564
A. Kalnitsky United States	13	529 1.1×	186 0.7×	92 0.9×	112 1.1×	30 0.4×	47	602
A. Martínez France	16	540 1.1×	154 0.6×	180 1.7×	216 2.1×	73 0.9×	41	649
Howard R. Huff United States	19	1.1k 2.4×	347 1.4×	109 1.1×	201 2.0×	29 0.4×	92	1.2k
P. Gérard France	11	259 0.6×	95 0.4×	101 1.0×	152 1.5×	58 0.7×	44	459
Marek E. Schmidt Japan	12	256 0.5×	194 0.8×	146 1.4×	116 1.1×	34 0.4×	40	415
J. P. Baukus United States	9	336 0.7×	193 0.8×	36 0.3×	169 1.7×	10 0.1×	12	489
Y. Tsunashima Japan	17	734 1.6×	155 0.6×	195 1.9×	157 1.6×	31 0.4×	77	846
T.Y. Huang Taiwan	18	1.1k 2.3×	430 1.7×	226 2.2×	134 1.3×	43 0.5×	84	1.2k
J. P. Carrejo United States	7	169 0.4×	153 0.6×	209 2.0×	277 2.7×	18 0.2×	11	424
J.‐P. Raskin Belgium	16	640 1.4×	239 0.9×	243 2.4×	192 1.9×	16 0.2×	57	935

Countries citing papers authored by H. Kappert

Since Specialization

Citations

This map shows the geographic impact of H. Kappert's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Kappert with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Kappert more than expected).

Fields of papers citing papers by H. Kappert

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Kappert. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Kappert. The network helps show where H. Kappert may publish in the future.

Co-authorship network of co-authors of H. Kappert

This figure shows the co-authorship network connecting the top 25 collaborators of H. Kappert. A scholar is included among the top collaborators of H. Kappert based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Kappert. H. Kappert is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

19 of 19 papers shown

Dreiner, S., et al.. (2016). Experimental Reliability Studies and SPICE Simulation for EEPROM at Temperatures up to 450°C. Journal of Microelectronics and Electronic Packaging. 13(1). 33–37. 1 indexed citations

Schmidt, A. J., H. Kappert, & Rainer Kokozinski. (2013). High temperature analog circuit design in PD-SOI CMOS technology using reverse body biasing. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 359–362. 2 indexed citations

Dreiner, S., et al.. (2012). High Temperature Characterization up to 450 °C of MOSFETs and basic circuits realized in a Silicon-on-Insulator (SOI) CMOS-Technology. Additional Conferences (Device Packaging HiTEC HiTEN & CICMT). 2012(HITEC). 227–232. 13 indexed citations

Meinders, T., et al.. (2006). A Sensitivity Analysis on the Springback Behavior of the Unconstrained Bending Problem. University of Twente Research Information. 9(3). 365–402. 22 indexed citations

Kappert, H., et al.. (2005). Low-power Single-chip CMOS Potentiostat. Proceedings of the International Solid-State Sensors and Actuators Conference - TRANSDUCERS '95. 1. 142–145. 42 indexed citations

Trieu, Hoc Khiem, et al.. (2000). Monolithic integrated surface micromachined pressure sensors with analog on-chip linearization and temperature compensation. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 547–550. 7 indexed citations

Spiegel, Efrat, et al.. (1995). A programmable mixed-signal ASIC for data acquisition systems in medical implants. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 162–163. 3 indexed citations

Harbeke, G., et al.. (1984). Growth and Physical Properties of LPCVD Polycrystalline Silicon Films. Journal of The Electrochemical Society. 131(3). 675–682. 192 indexed citations

Belz, Jürgen, Klaus Heidemann, H. Kappert, & E. te Kaat. (1983). Anomalous defect interaction and amorphization during self-irradiation of Si crystals at 450 K. physica status solidi (a). 76(1). K81–K84. 12 indexed citations

10.

Harbeke, G., et al.. (1983). High quality polysilicon by amorphous low pressure chemical vapor deposition. Applied Physics Letters. 42(3). 249–251. 83 indexed citations

11.

Kappert, H., et al.. (1980). Range and range straggling of oxygen implanted into silicon at energies between 2 and 20 MeV. Applied Physics A. 21(2). 151–158. 22 indexed citations

12.

Kappert, H., et al.. (1979). Spatial correlation between primary and secondary defect profiles after high dose self-irradiation of Si crystals. Radiation Effects. 45(1-2). 33–43. 13 indexed citations

13.

Kappert, H., et al.. (1979). Minority carrier lifetime in silicon after Ar+ and Si+ implantation. physica status solidi (a). 52(2). 463–474. 17 indexed citations

14.

Yang, Kai, Robert E. Anderson, & H. Kappert. (1978). Identification of oxide precipitates in annealed silicon crystals. Applied Physics Letters. 33(3). 225–227. 21 indexed citations

15.

Yang, Kai, H. Kappert, & G. H. Schwuttke. (1978). Minority carrier lifetime in annealed silicon crystals containing oxygen. physica status solidi (a). 50(1). 221–235. 68 indexed citations

16.

Kappert, H., et al.. (1978). Range and damage profiling after heavy ion implantation in the MeV region. physica status solidi (a). 47(2). 751–762. 19 indexed citations

17.

Kappert, H., et al.. (1977). Minority carrier lifetime and defect structure in silicon after cesium implantation. physica status solidi (a). 43(1). 119–131. 6 indexed citations

18.

Schwuttke, G. H., et al.. (1977). Lifetime control in silicon through impact sound stressing. physica status solidi (a). 42(2). 553–564. 12 indexed citations

19.

Kappert, H., et al.. (1971). Domain wall width in NiFe films–dependence on film thickness and applied field. physica status solidi (a). 4(3). 737–741. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact