H. J. Ko

798 total citations
26 papers, 695 citations indexed

About

H. J. Ko is a scholar working on Materials Chemistry, Electronic, Optical and Magnetic Materials and Condensed Matter Physics. According to data from OpenAlex, H. J. Ko has authored 26 papers receiving a total of 695 indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Materials Chemistry, 19 papers in Electronic, Optical and Magnetic Materials and 12 papers in Condensed Matter Physics. Recurrent topics in H. J. Ko's work include ZnO doping and properties (22 papers), Ga2O3 and related materials (16 papers) and GaN-based semiconductor devices and materials (11 papers). H. J. Ko is often cited by papers focused on ZnO doping and properties (22 papers), Ga2O3 and related materials (16 papers) and GaN-based semiconductor devices and materials (11 papers). H. J. Ko collaborates with scholars based in Japan, South Korea and Indonesia. H. J. Ko's co-authors include T. Yao, Zhengguo Zhu, Hisao Uchiki, Hisao Makino, Soon‐Ku Hong, Kensuke Miyajima, Akio Yamamoto, T. Goto, L.W. Guo and Takashi Hanada and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

H. J. Ko

26 papers receiving 675 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
H. J. Ko Japan	13	647	422	290	137	36	26	695
Y.D. Park South Korea	8	564 0.9×	339 0.8×	236 0.8×	126 0.9×	73 2.0×	15	647
Y.‐Z. Yoo Japan	12	980 1.5×	532 1.3×	368 1.3×	119 0.9×	29 0.8×	15	1.0k
A. K. Omaev Russia	6	492 0.8×	258 0.6×	280 1.0×	130 0.9×	24 0.7×	16	528
Jin-Yong Oh South Korea	8	641 1.0×	367 0.9×	430 1.5×	154 1.1×	45 1.3×	9	706
Byung‐Gu Jeon South Korea	11	785 1.2×	673 1.6×	301 1.0×	268 2.0×	30 0.8×	14	960
S. J. Park South Korea	9	584 0.9×	284 0.7×	386 1.3×	70 0.5×	24 0.7×	10	624
Young Eon Ihm South Korea	12	582 0.9×	311 0.7×	173 0.6×	84 0.6×	74 2.1×	28	620
Sebastian Eisermann Germany	11	480 0.7×	243 0.6×	250 0.9×	43 0.3×	35 1.0×	13	518
O. Seifarth Germany	14	356 0.6×	177 0.4×	282 1.0×	80 0.6×	78 2.2×	25	487
Aditi Risbud United States	6	854 1.3×	436 1.0×	241 0.8×	126 0.9×	40 1.1×	9	896

Countries citing papers authored by H. J. Ko

Since Specialization

Citations

This map shows the geographic impact of H. J. Ko's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. J. Ko with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. J. Ko more than expected).

Fields of papers citing papers by H. J. Ko

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. J. Ko. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. J. Ko. The network helps show where H. J. Ko may publish in the future.

Co-authorship network of co-authors of H. J. Ko

This figure shows the co-authorship network connecting the top 25 collaborators of H. J. Ko. A scholar is included among the top collaborators of H. J. Ko based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. J. Ko. H. J. Ko is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Oh, D. C., et al.. (2012). Comprehensive study of the surface morphology evolution induced by thermal annealing in single-crystalline ZnO Films and ZnO bulks. Journal of the Korean Physical Society. 61(10). 1732–1736. 4 indexed citations

Minegishi, Tsutomu, et al.. (2011). Growth mechanism of ZnO low-temperature homoepitaxy. Journal of Applied Physics. 110(5). 11 indexed citations

Oh, D. C., Tomoya Suzuki, Hisao Makino, et al.. (2006). Electrical properties of ZnO/GaN heterostructures and photoresponsivity of ZnO layers. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 3(4). 946–951. 13 indexed citations

Oh, D. C., Tomoya Suzuki, Takashi Hanada, et al.. (2006). Photoresponsivity of ZnO Schottky barrier diodes. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 24(3). 1595–1598. 15 indexed citations

Oh, D. C., Tomoya Suzuki, Hisao Makino, et al.. (2005). Electrical characterization for ZnO layers grown on GaN templates by molecular-beam epitaxy. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 23(3). 1281–1285. 4 indexed citations

Oh, D. C., Tomoya Suzuki, Hisao Makino, et al.. (2005). Capacitance-voltage characteristics of ZnO∕GaN heterostructures. Applied Physics Letters. 87(16). 20 indexed citations

Takeda, Jun, et al.. (2004). Conversion of an electron–hole plasma into a high density excitonic state in ZnO epitaxial thin films. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 1(4). 839–842. 12 indexed citations

Aliev, G. N., D. Wolverson, J. J. Davies, et al.. (2004). Optically detected magnetic resonance of epitaxial nitrogen-doped ZnO. Physical Review B. 70(11). 16 indexed citations

Setiawan, Agus, H. J. Ko, & T. Yao. (2003). Effects of annealing of MgO buffer layer on structural quality of ZnO layers grown by P-MBE on c-sapphire. Materials Science in Semiconductor Processing. 6(5-6). 371–374. 8 indexed citations

10.

Hong, Soon‐Ku, et al.. (2002). Interface Engineering in ZnO Epitaxy. physica status solidi (b). 229(2). 803–813. 10 indexed citations

11.

Ishida, Akihiro, Y. Inoue, Hirokazu Tatsuoka, et al.. (2002). Characterization of AlN/GaN Quantum‐Cascade Structures Prepared by Hot‐Wall Epitaxy. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 520–523. 3 indexed citations

12.

Yamamoto, Akio, Kensuke Miyajima, T. Goto, H. J. Ko, & T. Yao. (2002). Bound Biexciton Photoluminescence in ZnO Epitaxial Thin Films. physica status solidi (b). 229(2). 871–875. 8 indexed citations

13.

Hong, Soon‐Ku, et al.. (2002). Interface Engineering in Heteroepitaxy. Acta Physica Polonica A. 102(4-5). 541–554. 1 indexed citations

14.

Hong, Soon‐Ku, et al.. (2001). ZnO and related materials: Plasma-Assisted molecular beam epitaxial growth, characterization and application. Journal of Electronic Materials. 30(6). 647–658. 25 indexed citations

15.

Ko, H. J., et al.. (2000). Biexciton emission from high-quality ZnO films grown on epitaxial GaN by plasma-assisted molecular-beam epitaxy. Applied Physics Letters. 77(4). 537–539. 118 indexed citations

16.

Guo, L.W., Dong‐Liang Peng, Hisao Makino, et al.. (2000). Structural and magnetic properties of Mn3O4 films grown on MgO(0 0 1) substrates by plasma-assisted MBE. Journal of Magnetism and Magnetic Materials. 213(3). 321–325. 80 indexed citations

17.

Ko, H. J., et al.. (2000). Photoluminescence properties of ZnO epilayers grown on CaF2(111) by plasma assisted molecular beam epitaxy. Applied Physics Letters. 76(14). 1905–1907. 193 indexed citations

18.

Ko, H. J., et al.. (2000). Effects of a low-temperature buffer layer on structural properties of ZnO epilayers grown on (111)CaF2 by two-step MBE. Journal of Crystal Growth. 208(1-4). 389–394. 16 indexed citations

19.

Guo, L.W., et al.. (1999). Epitaxial growth of Mn3O4 film on MgO(001) substrate by plasma-assisted molecular beam epitaxy (MBE). Journal of Crystal Growth. 205(4). 531–536. 27 indexed citations

20.

Ko, Jung Min, Yasuko Terada, H. J. Ko, et al.. (1998). Epitaxial growth of NdF3:Er3+ film on CaF2(111) substrate by molecular beam epitaxy. Journal of Crystal Growth. 192(1-2). 157–163. 3 indexed citations

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