G. Ungaro

592 total citations
12 papers, 479 citations indexed

About

G. Ungaro is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, G. Ungaro has authored 12 papers receiving a total of 479 indexed citations (citations by other indexed papers that have themselves been cited), including 12 papers in Atomic and Molecular Physics, and Optics, 11 papers in Electrical and Electronic Engineering and 6 papers in Condensed Matter Physics. Recurrent topics in G. Ungaro's work include Semiconductor Quantum Structures and Devices (11 papers), GaN-based semiconductor devices and materials (6 papers) and Semiconductor Lasers and Optical Devices (5 papers). G. Ungaro is often cited by papers focused on Semiconductor Quantum Structures and Devices (11 papers), GaN-based semiconductor devices and materials (6 papers) and Semiconductor Lasers and Optical Devices (5 papers). G. Ungaro collaborates with scholars based in France, Tunisia and Italy. G. Ungaro's co-authors include Jean‐Christophe Harmand, G. Le Roux, L. Largeau, R. Teissier, E. V. K. Rao, J.I. Ramos, R. Chtourou, S. Bouzid, A. Caliman and I. F. L. Dias and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Materials Science and Engineering C.

In The Last Decade

G. Ungaro

11 papers receiving 459 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
G. Ungaro France	8	459	395	237	71	60	12	479
D. Schlenker Japan	13	489 1.1×	478 1.2×	153 0.6×	24 0.3×	44 0.7×	22	507
J.J. Banas United States	5	443 1.0×	443 1.1×	246 1.0×	60 0.8×	44 0.7×	9	520
M. Mattingly United States	13	420 0.9×	411 1.0×	42 0.2×	53 0.7×	65 1.1×	31	463
S. Leu Germany	8	317 0.7×	288 0.7×	119 0.5×	19 0.3×	38 0.6×	13	334
B. E. Maile Germany	12	311 0.7×	292 0.7×	47 0.2×	64 0.9×	76 1.3×	25	378
Ru-Shang Hsiao Taiwan	13	325 0.7×	320 0.8×	50 0.2×	20 0.3×	84 1.4×	44	354
Russ Fischer United States	5	410 0.9×	398 1.0×	86 0.4×	27 0.4×	46 0.8×	5	485
O. Aina United States	13	402 0.9×	465 1.2×	43 0.2×	44 0.6×	57 0.9×	46	510
G. Steinle Germany	8	403 0.9×	467 1.2×	118 0.5×	16 0.2×	20 0.3×	20	490
M.R. Gokhale United States	14	288 0.6×	561 1.4×	60 0.3×	36 0.5×	48 0.8×	33	581

Countries citing papers authored by G. Ungaro

Since Specialization

Citations

This map shows the geographic impact of G. Ungaro's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Ungaro with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Ungaro more than expected).

Fields of papers citing papers by G. Ungaro

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Ungaro. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Ungaro. The network helps show where G. Ungaro may publish in the future.

Co-authorship network of co-authors of G. Ungaro

This figure shows the co-authorship network connecting the top 25 collaborators of G. Ungaro. A scholar is included among the top collaborators of G. Ungaro based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Ungaro. G. Ungaro is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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12 of 12 papers shown

Ungaro, G., I. Sagnes, G. Le Roux, et al.. (2002). GaAsSbN: a material for 1.3-1.55 μm emission. 38. 553–556.

Bouzid, S., et al.. (2002). Effect of nitrogen in the electronic structure of GaAsN and GaAsSb(N) compounds. Materials Science and Engineering C. 21(1-2). 251–254. 25 indexed citations

Chtourou, R., et al.. (2002). Effect of nitrogen and temperature on the electronic band structure of GaAs1−xNx alloys. Applied Physics Letters. 80(12). 2075–2077. 38 indexed citations

Harmand, Jean‐Christophe, A. Caliman, E. V. K. Rao, et al.. (2002). GaNAsSb: how does it compare with other dilute III V-nitride alloys?. Semiconductor Science and Technology. 17(8). 778–784. 76 indexed citations

Sorbello, Gino, Stefano Taccheo, Marco Marangoni, et al.. (2002). Buried-channel active waveguide array on Er,Yb:phosphate glass by field-assisted ion-exchange technique. 1–1. 1 indexed citations

Caliman, A., A. Ramdane, D. Meichenin, et al.. (2002). High performance GaInNAs/GaNAs/GaAs narrow ridge waveguide laser diodes. Electronics Letters. 38(14). 710–712. 7 indexed citations

Harmand, Jean‐Christophe, G. Ungaro, J.I. Ramos, et al.. (2001). Investigations on GaAsSbN/GaAs quantum wells for 1.3–1.55μm emission. Journal of Crystal Growth. 227-228. 553–557. 45 indexed citations

Teissier, R., et al.. (2001). Temperature-dependent valence band offset and band-gap energies of pseudomorphic GaAsSb on GaAs. Journal of Applied Physics. 89(10). 5473–5477. 106 indexed citations

Harmand, Jean‐Christophe, G. Ungaro, L. Largeau, & G. Le Roux. (2000). Comparison of nitrogen incorporation in molecular-beam epitaxy of GaAsN, GaInAsN, and GaAsSbN. Applied Physics Letters. 77(16). 2482–2484. 88 indexed citations

10.

Harmand, Jean‐Christophe, G. Ungaro, I. Sagnes, et al.. (1999). Room temperature continuous wave operation under optical pumping of a 1.48μm vertical cavity laser based on AlGaAsSb mirror. Journal of Crystal Growth. 201-202. 837–840. 2 indexed citations

11.

Ungaro, G., G. Le Roux, R. Teissier, & Jean‐Christophe Harmand. (1999). GaAsSbN: a new low-bandgap material for GaAs substrates. Electronics Letters. 35(15). 1246–1248. 78 indexed citations

12.

Ungaro, G., Jean‐Christophe Harmand, I. Sagnes, et al.. (1998). Room-temperature continuous-wave operation VCSELat 1.48 µm with Sb-based Bragg reflector. Electronics Letters. 34(14). 1402–1404. 13 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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