M. Mattingly

617 total citations
31 papers, 463 citations indexed

About

M. Mattingly is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Biomedical Engineering. According to data from OpenAlex, M. Mattingly has authored 31 papers receiving a total of 463 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Atomic and Molecular Physics, and Optics, 27 papers in Electrical and Electronic Engineering and 4 papers in Biomedical Engineering. Recurrent topics in M. Mattingly's work include Semiconductor Quantum Structures and Devices (29 papers), Semiconductor materials and devices (12 papers) and Radio Frequency Integrated Circuit Design (7 papers). M. Mattingly is often cited by papers focused on Semiconductor Quantum Structures and Devices (29 papers), Semiconductor materials and devices (12 papers) and Radio Frequency Integrated Circuit Design (7 papers). M. Mattingly collaborates with scholars based in United States. M. Mattingly's co-authors include L. Aina, O. Aina, N. Bottka, D. Kurt Gaskill, Lisa Stecker, P. Bhattacharya, Meiping Tong, I. Adesida, A. Ketterson and Fangying Juan and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

M. Mattingly

29 papers receiving 411 citations

Peers

M. Mattingly
O. Aina United States
Bart J. Van Zeghbroeck United States
J. Selders Germany
Hiroshi Fushimi Japan
L. Aina United States
M. Y. Yen United States
G. F. Glinskiı̆ Russia
Tonao Yuasa Japan
J. D. Oberstar United States
C. J. Pinzone United States
O. Aina United States
M. Mattingly
Citations per year, relative to M. Mattingly M. Mattingly (= 1×) peers O. Aina

Countries citing papers authored by M. Mattingly

Since Specialization
Citations

This map shows the geographic impact of M. Mattingly's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Mattingly with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Mattingly more than expected).

Fields of papers citing papers by M. Mattingly

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Mattingly. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Mattingly. The network helps show where M. Mattingly may publish in the future.

Co-authorship network of co-authors of M. Mattingly

This figure shows the co-authorship network connecting the top 25 collaborators of M. Mattingly. A scholar is included among the top collaborators of M. Mattingly based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Mattingly. M. Mattingly is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
3.
Tong, Meiping, et al.. (1992). OMVPE-grown InAlAs/InGaAs/InP MODFET's with performance comparable to those grown by MBE. IEEE Transactions on Electron Devices. 39(10). 2411–2413. 3 indexed citations
4.
Tong, Meiping, et al.. (1992). Selective Wet Etching Characteristics of Lattice‐Matched InGaAs / InAlAs / InP. Journal of The Electrochemical Society. 139(10). L91–L93. 15 indexed citations
5.
Aina, L., et al.. (1991). MOVPE of AlInAs HEMT structures. Journal of Crystal Growth. 107(1-4). 932–941. 6 indexed citations
6.
Aina, L., M. Mattingly, Mike O’Connor, et al.. (1991). 0.33- mu m millimeter-wave InP-channel HEMTs with high f/sub T/ and f/sub max/. IEEE Transactions on Electron Devices. 38(12). 2702–2702. 1 indexed citations
7.
Carruthers, Thomas F., et al.. (1991). Responses of InP/Ga0.47In0.53As/InP heterojunction bipolar transistors to 1530 and 620 nm ultrafast optical pulses. Applied Physics Letters. 59(3). 327–329. 13 indexed citations
8.
Aina, L., et al.. (1991). High mobility AlInAs/InP high electron mobility transistor structures grown by organometallic vapor phase epitaxy. Applied Physics Letters. 59(12). 1485–1487. 18 indexed citations
9.
Tong, Meiping, et al.. (1991). 0.23 μm gate length MODFETs on InAlAs/InGaAs/InP heterostructure grown by MOVPE. Electronics Letters. 27(16). 1426–1427. 4 indexed citations
10.
Aina, O., M. Mattingly, Joanna Bates, et al.. (1991). High-purity InP grown on Si by organometallic vapor phase epitaxy. Applied Physics Letters. 58(14). 1554–1556. 8 indexed citations
11.
Aina, L., et al.. (1990). Modulation-doped AlInAs/InP heterostructures grown by organometallic vapor phase epitaxy. Applied Physics Letters. 57(5). 492–493. 10 indexed citations
12.
Aina, O., et al.. (1988). Sims and photoluminescence evaluation of high purity InP grown by organometallic vapor phase epitaxy. Journal of Crystal Growth. 92(1-2). 215–221. 10 indexed citations
13.
Aina, O., et al.. (1988). Microwave and DC characterisation of InP/GaInAs heterostructure insulated-gate FETs employing AlInAs as gate insulator. Electronics Letters. 24(19). 1242–1243. 3 indexed citations
14.
Stecker, Lisa, et al.. (1988). Heterojunction InAlAs/InP MESFETs grown by OMVPE. IEEE Electron Device Letters. 9(5). 223–225. 16 indexed citations
15.
Aina, O., et al.. (1988). Undoped InP/InGaAs heterostructure insulated-gate FET's grown by OMVPE with PECVD-deposited SiO/sub 2/ as gate insulator. IEEE Electron Device Letters. 9(10). 500–502. 8 indexed citations
16.
Aina, L. & M. Mattingly. (1988). Electron mobilities of AlInAs and AlInAs/InP heterostructures. Journal of Applied Physics. 64(10). 5253–5255. 7 indexed citations
17.
Aina, L., et al.. (1987). High mobility, selectively doped InP/GaInAs grown by organometallic vapor phase epitaxy. Applied Physics Letters. 51(21). 1735–1737. 13 indexed citations
18.
Aina, L. & M. Mattingly. (1987). High-quality InAlAs grown by organometallic vapor phase epitaxy. Applied Physics Letters. 51(20). 1637–1639. 22 indexed citations
19.
Aina, O., M. Mattingly, Fangying Juan, & P. Bhattacharya. (1987). Photoluminescence characterization of single heterojunction quantum well structures. Applied Physics Letters. 50(1). 43–45. 24 indexed citations
20.
Aina, L., et al.. (1986). Galvanomagnetic effect in AlGaAs/GaAs heterostructures grown by organometallic vapor phase epitaxy. Applied Physics Letters. 49(14). 865–867. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by O. Aina Breakdown of academic impact, for papers by Bart J. Van Zeghbroeck Breakdown of academic impact, for papers by J. Selders Breakdown of academic impact, for papers by Hiroshi Fushimi Breakdown of academic impact, for papers by L. Aina Breakdown of academic impact, for papers by M. Y. Yen Breakdown of academic impact, for papers by G. F. Glinskiı̆ Breakdown of academic impact, for papers by Tonao Yuasa Breakdown of academic impact, for papers by J. D. Oberstar Breakdown of academic impact, for papers by C. J. Pinzone
Rankless by CCL
2026