G. Landgren

2.6k total citations
112 papers, 2.1k citations indexed

About

G. Landgren is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Surfaces, Coatings and Films. According to data from OpenAlex, G. Landgren has authored 112 papers receiving a total of 2.1k indexed citations (citations by other indexed papers that have themselves been cited), including 93 papers in Electrical and Electronic Engineering, 85 papers in Atomic and Molecular Physics, and Optics and 14 papers in Surfaces, Coatings and Films. Recurrent topics in G. Landgren's work include Semiconductor Quantum Structures and Devices (63 papers), Semiconductor Lasers and Optical Devices (33 papers) and Semiconductor materials and devices (33 papers). G. Landgren is often cited by papers focused on Semiconductor Quantum Structures and Devices (63 papers), Semiconductor Lasers and Optical Devices (33 papers) and Semiconductor materials and devices (33 papers). G. Landgren collaborates with scholars based in Sweden, United States and Italy. G. Landgren's co-authors include R. Ludeke, J. F. Morar, F. J. Himpsel, Y. Jugnet, F. J. Himpsel, F. R. McFeely, N. D. Shinn, Dieter Schmeißer, A. Bogen and D. Rieger and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

G. Landgren

107 papers receiving 2.0k citations

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author Last Decade Papers Cites
G. Landgren 1.6k 1.2k 537 413 213 112 2.1k
G. M. Martin 1.9k 1.2× 1.5k 1.3× 375 0.7× 259 0.6× 142 0.7× 34 2.3k
A. Mircéa 2.3k 1.5× 1.8k 1.5× 415 0.8× 290 0.7× 152 0.7× 101 2.8k
J. M. Woodall 1.8k 1.1× 2.0k 1.7× 586 1.1× 377 0.9× 338 1.6× 98 2.8k
F.H. Baumann 1.7k 1.1× 594 0.5× 820 1.5× 399 1.0× 262 1.2× 86 2.5k
G. Vincent 1.7k 1.1× 1.1k 0.9× 734 1.4× 148 0.4× 382 1.8× 48 2.2k
R. Bhat 2.5k 1.6× 1.8k 1.5× 482 0.9× 258 0.6× 389 1.8× 64 2.9k
D. Bois 1.5k 1.0× 1.1k 0.9× 502 0.9× 165 0.4× 101 0.5× 38 2.0k
L. R. Harriott 1.2k 0.7× 654 0.6× 350 0.7× 354 0.9× 522 2.5× 102 1.9k
A. Mitonneau 1.4k 0.9× 1.1k 0.9× 290 0.5× 247 0.6× 92 0.4× 14 1.7k
R. Scarmozzino 1.6k 1.0× 950 0.8× 288 0.5× 334 0.8× 226 1.1× 109 2.1k

Countries citing papers authored by G. Landgren

Since Specialization
Citations

This map shows the geographic impact of G. Landgren's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Landgren with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Landgren more than expected).

Fields of papers citing papers by G. Landgren

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Landgren. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Landgren. The network helps show where G. Landgren may publish in the future.

Co-authorship network of co-authors of G. Landgren

This figure shows the co-authorship network connecting the top 25 collaborators of G. Landgren. A scholar is included among the top collaborators of G. Landgren based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Landgren. G. Landgren is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Kjebon, O., K. Streubel, J. Wallin, et al.. (2002). Low threshold, high quantum efficiency, high speed strain compensated multiquantum well lasers. 473–475. 3 indexed citations
3.
Menon, Carlo, A. Bentzen, G. Landgren, & Henry H. Radamson. (2002). Defect density in non-selective and selective Si/SiGe structures. Journal of Crystal Growth. 237-239. 259–263. 2 indexed citations
4.
Vukušić, Josip, et al.. (2000). Fabrication and characterization of diffractive optical elements in InP for monolithic integration with surface-emitting components. Applied Optics. 39(3). 398–398. 5 indexed citations
5.
Radamson, Henry H., Jan Grahn, & G. Landgren. (2000). CVD growth of high speed SiGe HBTs using SiH4. Journal of Telecommunications and Information Technology. 10–14. 1 indexed citations
6.
Grahn, Jan, B. Gunnar Malm, Henry H. Radamson, et al.. (1999). A high speed SiGe HBT process using non-selective epitaxy and in situ phosphorus doped polysilicon emitter: Optimization of device design rules. European Solid-State Device Research Conference. 1. 728–731. 3 indexed citations
7.
Anand, S., et al.. (1999). Trimethylamine: Novel source for low damage reactive ion beam etching of InP. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 17(6). 2660–2663. 1 indexed citations
8.
Marcinkevičius, S., et al.. (1995). Ambipolar and electron transport in quantum-well laser structures with step-graded confinement layers. Conference on Lasers and Electro-Optics. 1 indexed citations
9.
Lundström, T., et al.. (1995). Fourier transform photoluminescence excitation spectroscopy of InGaAs/InP quantum wells. Superlattices and Microstructures. 17(4). 407–407. 1 indexed citations
10.
Streubel, K., et al.. (1994). Importance of metalorganic vapor phase epitaxy growth conditions for the fabrication of GaInAsP strained quantum well lasers. Journal of Crystal Growth. 143(1-2). 7–14. 26 indexed citations
11.
Guizzetti, G., M. Patrini, A. Piaggi, et al.. (1994). Study of vibrational properties of InGaAsP by far-infrared reflectivity. Journal of Applied Physics. 75(6). 3085–3088. 3 indexed citations
12.
Wallin, J., G. Landgren, K. Streubel, S. Nilsson, & M. Öberg. (1992). Selective area regrowth of butt-joint coupled waveguides in multi-section DBR lasers. Journal of Crystal Growth. 124(1-4). 741–746. 12 indexed citations
13.
Nordell, N., et al.. (1990). Diffusion of Zn and Mg in AlGaAs/GaAs structures grown by metalorganic vapor-phase epitaxy. Journal of Applied Physics. 67(2). 778–786. 25 indexed citations
14.
Sahlén, Olof, et al.. (1989). Low-power optical bistability in a thermally stable AlGaAs étalon. Applied Physics Letters. 54(23). 2290–2292. 8 indexed citations
15.
Sahlén, Olof, et al.. (1988). SUBNANOSECOND ABSORPTIVE SWITCHING IN GaAs ETALONS. Le Journal de Physique Colloques. 49(C2). C2–197. 1 indexed citations
16.
Pistol, Mats‐Erik, et al.. (1986). Optical properties of narrow high quality GaAs/AlGaAs quantum wells grown by MOVPE. Superlattices and Microstructures. 2(6). 501–505. 5 indexed citations
17.
Schmeißer, Dieter, R.D. Schnell, A. Bogen, et al.. (1986). Surface oxidation states of germanium. Surface Science. 172(2). 455–465. 245 indexed citations
18.
Schneider, A., G. Landgren, & M.P. Bhavaraju. (1985). Analysis and Prediction of Tranmissiion Unit Performance Using Advanced Regression Models. IEEE Transactions on Power Apparatus and Systems. PAS-104(5). 1084–1094. 5 indexed citations
19.
Svensson, Stefan P., et al.. (1983). Initial growth of Al on GaAs(001) and electrical characterization of the interface. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 1(2). 361–364. 6 indexed citations
20.
Landgren, G., et al.. (1974). Dynamic Stability Tests on a 733 MVA Generator at Kincaid Station. IEEE Transactions on Power Apparatus and Systems. PAS-93(5). 1328–1334. 13 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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