Michael Povolotskyi

1.5k total citations
98 papers, 1.0k citations indexed

About

Michael Povolotskyi is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, Michael Povolotskyi has authored 98 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 73 papers in Electrical and Electronic Engineering, 44 papers in Atomic and Molecular Physics, and Optics and 28 papers in Biomedical Engineering. Recurrent topics in Michael Povolotskyi's work include Semiconductor materials and devices (56 papers), Advancements in Semiconductor Devices and Circuit Design (46 papers) and Semiconductor Quantum Structures and Devices (24 papers). Michael Povolotskyi is often cited by papers focused on Semiconductor materials and devices (56 papers), Advancements in Semiconductor Devices and Circuit Design (46 papers) and Semiconductor Quantum Structures and Devices (24 papers). Michael Povolotskyi collaborates with scholars based in United States, Italy and Germany. Michael Povolotskyi's co-authors include Gerhard Klimeck, Tillmann Kubis, Aldo Di Carlo, Hong-Hyun Park, Sebastian Steiger, F. Sacconi, Timothy B. Boykin, Hesameddin Ilatikhameneh, Jun Huang and Zhengping Jiang and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

Michael Povolotskyi

91 papers receiving 976 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Michael Povolotskyi United States 18 732 471 313 240 168 98 1.0k
A. Konkar United States 14 535 0.7× 561 1.2× 254 0.8× 157 0.7× 140 0.8× 25 729
J. Allam United Kingdom 17 602 0.8× 606 1.3× 262 0.8× 90 0.4× 78 0.5× 55 886
M. Sūdžius Germany 17 547 0.7× 644 1.4× 156 0.5× 273 1.1× 120 0.7× 77 897
M. C. Debnath Japan 16 510 0.7× 533 1.1× 295 0.9× 107 0.4× 84 0.5× 50 769
V. G. Dorogan United States 20 954 1.3× 1.1k 2.3× 590 1.9× 286 1.2× 100 0.6× 82 1.3k
J. M. Llorens Spain 16 409 0.6× 424 0.9× 154 0.5× 179 0.7× 66 0.4× 54 608
Inga Anita Fischer Germany 15 614 0.8× 430 0.9× 152 0.5× 232 1.0× 86 0.5× 90 854
Doewon Park United States 14 761 1.0× 463 1.0× 163 0.5× 132 0.6× 522 3.1× 32 1.0k
Nicolas Cavassilas France 16 644 0.9× 390 0.8× 229 0.7× 267 1.1× 85 0.5× 76 849
T. Zibold Germany 6 464 0.6× 523 1.1× 246 0.8× 156 0.7× 248 1.5× 8 762

Countries citing papers authored by Michael Povolotskyi

Since Specialization
Citations

This map shows the geographic impact of Michael Povolotskyi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Michael Povolotskyi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Michael Povolotskyi more than expected).

Fields of papers citing papers by Michael Povolotskyi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Michael Povolotskyi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Michael Povolotskyi. The network helps show where Michael Povolotskyi may publish in the future.

Co-authorship network of co-authors of Michael Povolotskyi

This figure shows the co-authorship network connecting the top 25 collaborators of Michael Povolotskyi. A scholar is included among the top collaborators of Michael Povolotskyi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Michael Povolotskyi. Michael Povolotskyi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Cunningham, Paul D., Nicholas V. Proscia, Dante J. O’Hara, et al.. (2024). Site-Specific Exciton–Plasmon Coupling in Nanoindented WSe2. ACS Photonics. 11(8). 3250–3258. 1 indexed citations
2.
Wang, Ziyi, et al.. (2023). Thermal Effects in Fully-Depleted SOI Devices. 1–4. 1 indexed citations
3.
Ilatikhameneh, Hesameddin, et al.. (2020). Doping profile engineered triple heterojunction TFETs with 12 nm body thickness. arXiv (Cornell University). 8 indexed citations
4.
Ilatikhameneh, Hesameddin, et al.. (2020). Impact of Body Thickness and Scattering on III–V Triple Heterojunction TFET Modeled With Atomistic Mode-Space Approximation. IEEE Transactions on Electron Devices. 67(8). 3478–3485. 13 indexed citations
5.
Chowdhury, Nadim, et al.. (2019). Superior Performance of 5-nm Gate Length GaN Nanowire nFET for Digital Logic Applications. IEEE Electron Device Letters. 40(6). 874–877. 13 indexed citations
6.
Shen, Tingting, Qingxiao Wang, Michael Povolotskyi, et al.. (2019). MoS2 for Enhanced Electrical Performance of Ultrathin Copper Films. ACS Applied Materials & Interfaces. 11(31). 28345–28351. 31 indexed citations
7.
Ameen, Tarek A., Hesameddin Ilatikhameneh, James Charles, et al.. (2018). Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot. Beilstein Journal of Nanotechnology. 9. 1075–1084. 3 indexed citations
8.
Sarangapani, Prasad, C. Weber, Jiwon Chang, et al.. (2018). Atomistic Tight-Binding Study of Contact Resistivity in Si/SiGe PMOS Schottky Contacts. IEEE Transactions on Nanotechnology. 17(5). 968–973. 4 indexed citations
9.
Povolotskyi, Michael, Ludmila J. Prokopeva, & Alexander V. Kildishev. (2018). Coupling electron transport with maxwell equations for modelling optically tunable photonic elements. 1–2. 1 indexed citations
10.
Stanev, Teodor K., James Charles, Vinod K. Sangwan, et al.. (2017). Control of interlayer physics in 2H transition metal dichalcogenides. Journal of Applied Physics. 122(22). 22 indexed citations
11.
Huang, Jun, Michael Povolotskyi, Devin Verreck, et al.. (2016). A tunnel FET design for high-current, 120 mV operation. 37. 30.2.1–30.2.4. 5 indexed citations
12.
Povolotskyi, Michael, et al.. (2014). Design and Simulation of Two-Dimensional Superlattice Steep Transistors. IEEE Electron Device Letters. 35(12). 1212–1214. 5 indexed citations
13.
Povolotskyi, Michael, et al.. (2013). Atomistic simulation of phonon and alloy limited hole mobility in Si1–xGex nanowires. physica status solidi (RRL) - Rapid Research Letters. 7(10). 903–906. 3 indexed citations
14.
Jiang, Zhengping, Marcelo A. Kuroda, Yaohua Tan, et al.. (2013). Electron transport in nano-scaled piezoelectronic devices. Applied Physics Letters. 102(19). 7 indexed citations
15.
Rich, Daniel H., et al.. (2010). Electronic and optical properties of GaN/AlN quantum dots on Si(111) subject to in-plane uniaxial stresses and variable excitation. Journal of Applied Physics. 108(8). 6 indexed citations
16.
Agarwal, Samarth, Michael Povolotskyi, Tillmann Kubis, & Gerhard Klimeck. (2010). Adaptive quadrature for sharply spiked integrands. Journal of Computational Electronics. 9(3-4). 252–255. 2 indexed citations
17.
Vinattieri, A., E. Feltin, D. Simeonov, et al.. (2009). Quantum confinement dependence of the energy splitting and recombination dynamics of A and B excitons in a GaN/AlGaN quantum well. Physical Review B. 79(24). 6 indexed citations
18.
Sacconi, F., Jean‐Marc Jancu, Michael Povolotskyi, & Aldo Di Carlo. (2007). Full-band tunneling in high-κ dielectric MOS structures. Microelectronics Reliability. 47(4-5). 694–696. 2 indexed citations
19.
Povolotskyi, Michael, Matthias Auf der Maur, & Aldo Di Carlo. (2005). Strain effects in freestanding three‐dimensional nitride nanostructures. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2(11). 3891–3894. 17 indexed citations
20.
Alderighi, Daniele, Marian Zamfirescu, Massimo Gurioli, et al.. (2003). Piezoelectric effects in sidewall quantum wires grown on patterned (311)A GaAs substrate. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 1433–1436. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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