F. Alexandre

419 total citations
8 papers, 100 citations indexed

About

F. Alexandre is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Surfaces, Coatings and Films. According to data from OpenAlex, F. Alexandre has authored 8 papers receiving a total of 100 indexed citations (citations by other indexed papers that have themselves been cited), including 6 papers in Atomic and Molecular Physics, and Optics, 5 papers in Electrical and Electronic Engineering and 3 papers in Surfaces, Coatings and Films. Recurrent topics in F. Alexandre's work include Semiconductor Quantum Structures and Devices (5 papers), Quantum and electron transport phenomena (3 papers) and Electron and X-Ray Spectroscopy Techniques (3 papers). F. Alexandre is often cited by papers focused on Semiconductor Quantum Structures and Devices (5 papers), Quantum and electron transport phenomena (3 papers) and Electron and X-Ray Spectroscopy Techniques (3 papers). F. Alexandre collaborates with scholars based in France, United Kingdom and United States. F. Alexandre's co-authors include Y. Monteil, H. Dumont, J. Dazord, Leon J. Goldstein, J.L. Gentner, C. Vincent, M.A. Brummell, R. J. Nicholas, J. F. Bresse and J.C. Portal and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Surface Science.

In The Last Decade

F. Alexandre

8 papers receiving 94 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
F. Alexandre France	7	92	65	27	21	11	8	100
R. Zeller United States	4	52 0.6×	26 0.4×	18 0.7×	20 1.0×	12 1.1×	11	77
Ban A. Naser Iraq	6	88 1.0×	60 0.9×	16 0.6×	13 0.6×	25 2.3×	21	117
J. Vaitkus Lithuania	7	86 0.9×	110 1.7×	57 2.1×	10 0.5×	9 0.8×	15	133
A. Vareille France	4	36 0.4×	16 0.2×	19 0.7×	41 2.0×	7 0.6×	9	71
A. Marsh United Kingdom	9	131 1.4×	110 1.7×	20 0.7×	14 0.7×	4 0.4×	11	163
Peter Evans United States	10	158 1.7×	271 4.2×	20 0.7×	16 0.8×	17 1.5×	23	287
R. Woltjer Netherlands	10	149 1.6×	295 4.5×	27 1.0×	40 1.9×	11 1.0×	25	354
R. Lehndorff Germany	6	113 1.2×	29 0.4×	22 0.8×	45 2.1×	26 2.4×	11	125
F. Hirler Germany	9	168 1.8×	199 3.1×	26 1.0×	36 1.7×	9 0.8×	25	310
K. A. Jones United States	6	37 0.4×	47 0.7×	26 1.0×	43 2.0×	9 0.8×	14	75

Countries citing papers authored by F. Alexandre

Since Specialization

Citations

This map shows the geographic impact of F. Alexandre's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Alexandre with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Alexandre more than expected).

Fields of papers citing papers by F. Alexandre

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Alexandre. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Alexandre. The network helps show where F. Alexandre may publish in the future.

Co-authorship network of co-authors of F. Alexandre

This figure shows the co-authorship network connecting the top 25 collaborators of F. Alexandre. A scholar is included among the top collaborators of F. Alexandre based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Alexandre. F. Alexandre is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

8 of 8 papers shown

1.

Dumont, H., C. Vincent, J. Dazord, et al.. (2003). Surface segregation of boron in BxGa1−xAs/GaAs epilayers studied by x-ray photoelectron spectroscopy and atomic force microscopy. Applied Physics Letters. 82(12). 1830–1832. 26 indexed citations

2.

Dumont, H., J. Dazord, Y. Monteil, F. Alexandre, & Leon J. Goldstein. (2002). Growth and characterization of high quality BxGa1−xAs/GaAs(001) epilayers. Journal of Crystal Growth. 248. 463–467. 27 indexed citations

3.

Alexandre, F., et al.. (1993). CBE selective embedded growth for quasi-planar GaAs HBT application. Journal of Crystal Growth. 127(1-4). 221–225. 8 indexed citations

4.

Seidel, W., et al.. (1993). Optical probing of intermixing in GaAs-AlGaAs multiquantum wells. Journal of Applied Physics. 74(4). 2968–2970. 1 indexed citations

5.

Alexandre, F., et al.. (1988). Characterization of oval defects in molecular beam epitaxy Ga0.7Al0.3As layers by spatially resolved cathodoluminescence. Applied Physics Letters. 52(3). 224–226. 10 indexed citations

6.

Nicholas, R. J., M.A. Brummell, J.C. Portal, et al.. (1986). Measurements of thermoelectric power in two-dimensional systems. Surface Science. 170(1-2). 298–303. 9 indexed citations

7.

Nicholas, R. J., et al.. (1986). Thermoelectric power of GaAs-GaAlAs heterostructures in high magnetic fields. Solid State Communications. 57(6). 381–384. 11 indexed citations

8.

Clark, Robert G., R. J. Nicholas, M.A. Brummell, et al.. (1985). Electron concentration dependent fractional quantisation in a two dimensional system. Solid State Communications. 56(2). 173–176. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact