Dae-Seok Byeon

1.3k total citations
19 papers, 201 citations indexed

About

Dae-Seok Byeon is a scholar working on Electrical and Electronic Engineering, Computer Networks and Communications and Hardware and Architecture. According to data from OpenAlex, Dae-Seok Byeon has authored 19 papers receiving a total of 201 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 8 papers in Computer Networks and Communications and 4 papers in Hardware and Architecture. Recurrent topics in Dae-Seok Byeon's work include Semiconductor materials and devices (13 papers), Advanced Data Storage Technologies (8 papers) and Silicon Carbide Semiconductor Technologies (7 papers). Dae-Seok Byeon is often cited by papers focused on Semiconductor materials and devices (13 papers), Advanced Data Storage Technologies (8 papers) and Silicon Carbide Semiconductor Technologies (7 papers). Dae-Seok Byeon collaborates with scholars based in South Korea. Dae-Seok Byeon's co-authors include Kitae Park, Doo-Hyun Kim, Jae‐Keun Oh, Byeong-Hoon Lee, Min‐Koo Han, Kang-Deog Suh, Sungsoo Lee, June Lee, Wonoh Lee and Moo‐Sung Kim and has published in prestigious journals such as Journal of Applied Physics, IEEE Journal of Solid-State Circuits and Japanese Journal of Applied Physics.

In The Last Decade

Dae-Seok Byeon

18 papers receiving 186 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Dae-Seok Byeon South Korea	9	166	74	30	22	16	19	201
Gyoyoung Jin South Korea	7	193 1.2×	61 0.8×	42 1.4×	9 0.4×	4 0.3×	25	221
Jaihyuk Song South Korea	8	111 0.7×	59 0.8×	15 0.5×	10 0.5×	3 0.2×	20	135
K. Ohuchi Japan	13	389 2.3×	99 1.3×	68 2.3×	39 1.8×	6 0.4×	42	424
Hoosung Cho South Korea	6	147 0.9×	74 1.0×	23 0.8×	8 0.4×	2 0.1×	8	172
A. Fazio United States	8	271 1.6×	151 2.0×	42 1.4×	30 1.4×	4 0.3×	14	344
Naoki Tega Japan	12	415 2.5×	26 0.4×	28 0.9×	7 0.3×	4 0.3×	27	423
Kang-Deog Suh South Korea	10	247 1.5×	134 1.8×	39 1.3×	35 1.6×	4 0.3×	27	305
Vishal Sharma India	10	270 1.6×	22 0.3×	57 1.9×	10 0.5×	7 0.4×	25	283
K. Kanda Japan	7	95 0.6×	72 1.0×	22 0.7×	22 1.0×		19	126
Y. Itoh Japan	11	299 1.8×	109 1.5×	76 2.5×	45 2.0×	3 0.2×	31	341

Countries citing papers authored by Dae-Seok Byeon

Since Specialization

Citations

This map shows the geographic impact of Dae-Seok Byeon's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Dae-Seok Byeon with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Dae-Seok Byeon more than expected).

Fields of papers citing papers by Dae-Seok Byeon

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Dae-Seok Byeon. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Dae-Seok Byeon. The network helps show where Dae-Seok Byeon may publish in the future.

Co-authorship network of co-authors of Dae-Seok Byeon

This figure shows the co-authorship network connecting the top 25 collaborators of Dae-Seok Byeon. A scholar is included among the top collaborators of Dae-Seok Byeon based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Dae-Seok Byeon. Dae-Seok Byeon is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

19 of 19 papers shown

Kim, Wandong, et al.. (2022). Cell Operation Technologies to Overcome Scale-down Issues in 3D NAND Flash Memory. 298–299. 3 indexed citations

Park, Kitae, Dae-Seok Byeon, & Doo-Hyun Kim. (2014). A world's first product of three-dimensional vertical NAND Flash memory and beyond. 1–5. 34 indexed citations

Byeon, Dae-Seok, Sungsoo Lee, Jin‐Sung Park, et al.. (2005). An 8gb multi-level NAND flash memory with 63nm STI CMOS process technology. 46–47. 13 indexed citations

Byeon, Dae-Seok, et al.. (2005). A Comparison between 63nm 8Gb and 90nm 4Gb Multi-Level Cell NAND Flash Memory for Mass Storage Application. 46. 13–16. 7 indexed citations

Lee, June, Dae-Seok Byeon, Jungdal Choi, et al.. (2005). A 1.8V 1Gb NAND flash memory with 0.12μm STI process technology. 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315). 2. 80–410. 1 indexed citations

Lee, Seungjae, Young-Taek Lee, Moo‐Sung Kim, et al.. (2004). A 3.3 V 4 Gb four-level NAND flash memory with 90 nm CMOS technology. 52–513. 13 indexed citations

Lee, June, Sungsoo Lee, Dae-Seok Byeon, et al.. (2003). A 90-nm CMOS 1.8-V 2-Gb NAND flash memory for mass storage applications. IEEE Journal of Solid-State Circuits. 38(11). 1934–1942. 22 indexed citations

Byeon, Dae-Seok, et al.. (2003). The maximum controllable current of improved base resistance controlled thyristor employing a self-aligned corrugated p-base. 229–232. 2 indexed citations

Lee, June, Sungsoo Lee, Dae-Seok Byeon, et al.. (2003). A 1.8 V 2 Gb NAND flash memory for mass storage applications. 1. 290–494. 9 indexed citations

10.

Lee, Chang‐Won, Dae-Seok Byeon, Jungdal Choi, et al.. (2003). A 1.8 V 1 Gb NAND flash memory with 0.12 μm STI process technology. 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315). 1. 104–450. 2 indexed citations

11.

Bae, Yun‐Jeong, et al.. (2003). The Algicidal Effect of Antimicrobial Peptide, Mastoparan B. 16(3). 193–201. 1 indexed citations

12.

Byeon, Dae-Seok, et al.. (2002). A fast-switching SOI SA-LIGBT without NDR region. 149–152. 46 indexed citations

13.

Lee, June, Dae-Seok Byeon, Sung-Soo Lee, et al.. (2002). High-performance 1-Gb-NAND flash memory with 0.12-μm technology. IEEE Journal of Solid-State Circuits. 37(11). 1502–1509. 9 indexed citations

14.

Byeon, Dae-Seok, et al.. (1998). CB-BRT: a new base resistance-controlled thyristor employing a self-aligned corrugated p-base. IEEE Electron Device Letters. 19(12). 493–495. 5 indexed citations

15.

Byeon, Dae-Seok, et al.. (1998). Optimum design of the field plate in the cylindrical p+n junction: analytical approach. Solid-State Electronics. 42(9). 1651–1655. 4 indexed citations

16.

Lee, Byeong-Hoon, Jung‐Hoon Chun, Seong-Dong Kim, et al.. (1998). A new gradual hole injection dual-gate LIGBT. IEEE Electron Device Letters. 19(12). 490–492. 14 indexed citations

17.

Lee, Byeong-Hoon, et al.. (1997). Dual-Gate Shorted Anode SOI Lateral Insulated Gate Bipolar Transistor Suppressing the Snap-Back. Japanese Journal of Applied Physics. 36(3S). 1663–1663. 4 indexed citations

18.

Byeon, Dae-Seok, et al.. (1996). Analytical solution of the breakdown voltage for 6H-silicon carbide p+n junction. Journal of Applied Physics. 79(5). 2796–2797. 4 indexed citations

19.

Lee, Byeong-Hoon, et al.. (1995). A Trench-Gate Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor with the p⁺ Cathode Well. Japanese Journal of Applied Physics. 34(2S). 854–854. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact