Dae‐Myeong Geum

1.6k total citations
97 papers, 1.2k citations indexed

About

Dae‐Myeong Geum is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Dae‐Myeong Geum has authored 97 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 89 papers in Electrical and Electronic Engineering, 30 papers in Atomic and Molecular Physics, and Optics and 20 papers in Materials Chemistry. Recurrent topics in Dae‐Myeong Geum's work include Semiconductor materials and devices (38 papers), Photonic and Optical Devices (22 papers) and Advancements in Semiconductor Devices and Circuit Design (20 papers). Dae‐Myeong Geum is often cited by papers focused on Semiconductor materials and devices (38 papers), Photonic and Optical Devices (22 papers) and Advancements in Semiconductor Devices and Circuit Design (20 papers). Dae‐Myeong Geum collaborates with scholars based in South Korea, United States and Bulgaria. Dae‐Myeong Geum's co-authors include Sanghyeon Kim, Seong Kwang Kim, Won Jun Choi, Jin Dong Song, Juhyuk Park, Jaeyong Jeong, Chang Zoo Kim, Sang Hyeon Kim, Bong Ho Kim and Minsu Park and has published in prestigious journals such as Nature Communications, SHILAP Revista de lepidopterología and Nano Letters.

In The Last Decade

Dae‐Myeong Geum

88 papers receiving 1.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Dae‐Myeong Geum South Korea 20 958 314 258 257 174 97 1.2k
Chii-Dong Chen Taiwan 11 332 0.3× 506 1.6× 272 1.1× 326 1.3× 112 0.6× 23 910
Wenbo Luo China 17 484 0.5× 379 1.2× 99 0.4× 444 1.7× 151 0.9× 76 942
Emiliano Pallecchi France 23 701 0.7× 1.0k 3.3× 439 1.7× 316 1.2× 44 0.3× 48 1.5k
Farshid Raissi Iran 17 763 0.8× 263 0.8× 260 1.0× 438 1.7× 69 0.4× 75 1.1k
Feiliang Chen China 16 363 0.4× 141 0.4× 99 0.4× 175 0.7× 49 0.3× 70 686
Albert Lin Taiwan 15 626 0.7× 315 1.0× 300 1.2× 170 0.7× 21 0.1× 59 887
Junhe Zhou China 21 1.2k 1.2× 439 1.4× 420 1.6× 114 0.4× 23 0.1× 147 1.5k
Anyuan Gao China 17 1.2k 1.3× 1.2k 3.7× 241 0.9× 322 1.3× 39 0.2× 20 1.7k
Runzhang Xie China 17 1.1k 1.2× 784 2.5× 142 0.6× 304 1.2× 34 0.2× 38 1.5k

Countries citing papers authored by Dae‐Myeong Geum

Since Specialization
Citations

This map shows the geographic impact of Dae‐Myeong Geum's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Dae‐Myeong Geum with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Dae‐Myeong Geum more than expected).

Fields of papers citing papers by Dae‐Myeong Geum

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Dae‐Myeong Geum. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Dae‐Myeong Geum. The network helps show where Dae‐Myeong Geum may publish in the future.

Co-authorship network of co-authors of Dae‐Myeong Geum

This figure shows the co-authorship network connecting the top 25 collaborators of Dae‐Myeong Geum. A scholar is included among the top collaborators of Dae‐Myeong Geum based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Dae‐Myeong Geum. Dae‐Myeong Geum is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
2.
Ryu, Han‐Youl & Dae‐Myeong Geum. (2025). Modeling of internal quantum efficiency in micro-LEDs with surface nonradiative recombination. Optics Express. 34(1). 219–219.
3.
Park, Juhyuk, Dae‐Myeong Geum, Seong Kwang Kim, et al.. (2025). Heterogeneous and Monolithic 3D Integrated Full‐Color Micro‐Light‐Emitting Diodes via CMOS‐Compatible Oxide Bonding for µLEDoS. Laser & Photonics Review. 19(15). 1 indexed citations
4.
Kim, Bong Ho, et al.. (2025). Room-temperature waveguide-integrated photodetector using bolometric effect for mid-infrared spectroscopy applications. Light Science & Applications. 14(1). 125–125. 7 indexed citations
5.
Jeong, Jaeyong, Seong Kwang Kim, Bong Ho Kim, et al.. (2024). Thermal Studies of 3-D Stacked InGaAs HEMTs and Mitigation Strategy of Self-Heating Effect Using Buried Metal Insertion. IEEE Transactions on Electron Devices. 71(8). 4517–4523. 3 indexed citations
6.
Jeong, Jaeyong, Seong Kwang Kim, Ji-Sung Lee, et al.. (2024). Cryogenic III-V and Nb electronics integrated on silicon for large-scale quantum computing platforms. Nature Communications. 15(1). 10809–10809. 4 indexed citations
7.
Kim, Seong Kwang, et al.. (2024). Ultrasensitive Mid-Infrared Optical Gas Sensor Based on Germanium-on-Insulator Photonic Circuits with Limit-of-Detection at Sub-ppm Level. ACS Photonics. 11(10). 4268–4278. 5 indexed citations
8.
Rahmani, Mehr Khalid, et al.. (2024). Enhanced resistive switching behaviors of organic resistive random access memory devices by adding polyethyleneimine interlayer. Organic Electronics. 132. 107089–107089. 1 indexed citations
9.
Jeong, Jaeyong, Dae‐Myeong Geum, Jae‐Hoon Han, et al.. (2024). Heavily Doped Channel Carrier Mobility in β-Ga2O3 Lateral Accumulation MOSFET. IEEE Transactions on Electron Devices. 71(5). 3429–3432. 4 indexed citations
10.
Kim, Bong Ho, Seong Kwang Kim, Seong Kwang Kim, et al.. (2023). Oxygen Scavenging in HfZrOx‐Based n/p‐FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement. Advanced Electronic Materials. 9(5). 15 indexed citations
11.
Kim, Bong Ho, Seong Kwang Kim, Seong Kwang Kim, et al.. (2023). Low Operating Voltage and Immediate Read‐After‐Write of HZO‐Based Si Ferroelectric Field‐Effect Transistors with High Endurance and Retention Characteristics. Advanced Electronic Materials. 10(1). 10 indexed citations
12.
Jeong, Jaeyong, Seong Kwang Kim, Seong Kwang Kim, et al.. (2022). Heterogeneous and Monolithic 3D Integration of III–V-Based Radio Frequency Devices on Si CMOS Circuits. ACS Nano. 16(6). 9031–9040. 28 indexed citations
13.
Jeong, Jaeyong, Seong Kwang Kim, Jongmin Kim, et al.. (2021). High-performance InGaAs-On-Insulator HEMTs on Si CMOS for Substrate Coupling Noise-free Monolithic 3D Mixed-Signal IC. Symposium on VLSI Technology. 1–2. 3 indexed citations
14.
Geum, Dae‐Myeong, Suhyun Kim, Suhyun Kim, et al.. (2021). Arrayed MoS2–In0.53Ga0.47As van der Waals Heterostructure for High‐Speed and Broadband Detection from Visible to Shortwave‐Infrared Light. Small. 17(17). e2007357–e2007357. 33 indexed citations
15.
Geum, Dae‐Myeong, et al.. (2021). TiOx/Ti/TiOx Tri-Layer Film-Based Waveguide Bolometric Detector for On-Chip Si Photonic Sensor. IEEE Transactions on Electron Devices. 69(4). 2151–2158. 11 indexed citations
16.
Kim, Seong Kwang, YeonJoo Jeong, Yu-Rim Jeon, et al.. (2020). 3D Stackable Synaptic Transistor for 3D Integrated Artificial Neural Networks. ACS Applied Materials & Interfaces. 12(6). 7372–7380. 26 indexed citations
17.
Geum, Dae‐Myeong, Seong Kwang Kim, Seong Kwang Kim, et al.. (2019). Strategy toward the fabrication of ultrahigh-resolution micro-LED displays by bonding-interface-engineered vertical stacking and surface passivation. Nanoscale. 11(48). 23139–23148. 53 indexed citations
18.
Kim, Seong Kwang, Seong Kwang Kim, Dae‐Myeong Geum, et al.. (2019). Improved characteristics of MOS interface between In0.53Ga0.47As and insulator by H2 annealing with Pt gate electrode. Applied Physics Letters. 115(14). 6 indexed citations
19.
Kim, Sanghyeon, Dae‐Myeong Geum, Sooseok Lee, et al.. (2017). A highly-efficient, concentrating-photovoltaic/thermoelectric hybrid generator. Nano Energy. 37. 242–247. 95 indexed citations
20.
Kim, Seong Kwang, Seong Kwang Kim, Jungmin Lee, et al.. (2016). Fully subthreshold current-based characterization of interface traps and surface potential in III–V-on-insulator MOSFETs. Solid-State Electronics. 122. 8–12. 4 indexed citations

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