Anyuan Gao

3.3k total citations · 2 hit papers
20 papers, 1.7k citations indexed

About

Anyuan Gao is a scholar working on Materials Chemistry, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering. According to data from OpenAlex, Anyuan Gao has authored 20 papers receiving a total of 1.7k indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Materials Chemistry, 10 papers in Atomic and Molecular Physics, and Optics and 10 papers in Electrical and Electronic Engineering. Recurrent topics in Anyuan Gao's work include 2D Materials and Applications (16 papers), Graphene research and applications (8 papers) and Topological Materials and Phenomena (4 papers). Anyuan Gao is often cited by papers focused on 2D Materials and Applications (16 papers), Graphene research and applications (8 papers) and Topological Materials and Phenomena (4 papers). Anyuan Gao collaborates with scholars based in China, United States and Japan. Anyuan Gao's co-authors include Feng Miao, Erfu Liu, Xiaomu Wang, Weida Hu, Mingsheng Long, Tianjun Cao, Chen Pan, Chenyu Wang, Shi‐Jun Liang and Yu Wang and has published in prestigious journals such as Advanced Materials, Nano Letters and ACS Nano.

In The Last Decade

Anyuan Gao

19 papers receiving 1.7k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus

2017 485 citations Mingsheng Long, Anyuan Gao et al. Science Advances profile →
Reconfigurable logic and neuromorphic circuits based on electrically tunable two-dimensional homojunctions

2020 299 citations Chen Pan, Chenyu Wang et al. Nature Electronics profile →

Peers

Anyuan Gao

EEE

AMPO

EOMM

Runzhang Xie China

Jiayue Han China

Meng Peng China

Shuang Wu China

Eilam Yalon Israel

Ching-Hua Wang United States

Hyun‐Yong Yu South Korea

Tianjun Cao China

Van Luan Nguyen South Korea

Sébastien Cueff France

Runzhang Xie China

Anyuan Gao

1.1k ×0.9

EEE

784 ×0.7

304 ×0.9

142 ×0.6

AMPO

211 ×1.3

EOMM

Citations per year, relative to Anyuan Gao Anyuan Gao (= 1×) peers Runzhang Xie

Countries citing papers authored by Anyuan Gao

Since Specialization

Citations

This map shows the geographic impact of Anyuan Gao's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Anyuan Gao with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Anyuan Gao more than expected).

Fields of papers citing papers by Anyuan Gao

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Anyuan Gao. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Anyuan Gao. The network helps show where Anyuan Gao may publish in the future.

Co-authorship network of co-authors of Anyuan Gao

This figure shows the co-authorship network connecting the top 25 collaborators of Anyuan Gao. A scholar is included among the top collaborators of Anyuan Gao based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Anyuan Gao. Anyuan Gao is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Wu, Shuang, Yufei Liu, Sinchul Yeom, et al.. (2025). Water-Assisted Concerted Layer Growth of T _d -Phase WTe ₂ for Nonlinear Hall Effect and Microwave Rectification. Nano Letters. 25(50). 17475–17484.

Gao, Anyuan & Su‐Yang Xu. (2023). Quantum metric nonlinear Hall effect in a topological antiferromagnetic heterostructure. Zenodo (CERN European Organization for Nuclear Research). 7 indexed citations

Zhang, Zhiyi, Bin Cheng, Anyuan Gao, et al.. (2022). Approaching the Intrinsic Threshold Breakdown Voltage and Ultrahigh Gain in a Graphite/InSe Schottky Photodetector. Advanced Materials. 34(47). e2206196–e2206196. 26 indexed citations

Su, Guangxu, Anyuan Gao, Bo Peng, et al.. (2022). Observation of in‐plane exciton–polaritons in monolayer WSe ₂ driven by plasmonic nanofingers. Nanophotonics. 11(13). 3149–3157. 8 indexed citations

Hu, Chaowei, Anyuan Gao, Hong Li, et al.. (2021). Growth, characterization, and Chern insulator state in MnBi2Te4 via the chemical vapor transport method. Physical Review Materials. 5(12). 24 indexed citations

Pan, Chen, Chenyu Wang, Shi‐Jun Liang, et al.. (2020). Reconfigurable logic and neuromorphic circuits based on electrically tunable two-dimensional homojunctions. Nature Electronics. 3(7). 383–390. 299 indexed citations breakdown →

Liu, Yan, Jiuren Zhou, Meng Ma, et al.. (2020). Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure. Nanoscale Research Letters. 15(1). 157–157. 38 indexed citations

Li, Lingfei, Lei Shao, Xiaowei Liu, et al.. (2020). Room-temperature valleytronic transistor. Nature Nanotechnology. 15(9). 743–749. 117 indexed citations

Wang, Shuang, Chenyu Wang, Pengfei Wang, et al.. (2020). Networking retinomorphic sensor with memristive crossbar for brain-inspired visual perception. National Science Review. 8(2). nwaa172–nwaa172. 111 indexed citations

10.

Gao, Anyuan, Jiawei Lai, Yaojia Wang, et al.. (2019). Observation of ballistic avalanche phenomena in nanoscale vertical InSe/BP heterostructures. Nature Nanotechnology. 14(3). 217–222. 193 indexed citations

11.

Gao, Anyuan, Zhiyi Zhang, Lingfei Li, et al.. (2019). Robust Impact-Ionization Field-Effect Transistor Based on Nanoscale Vertical Graphene/Black Phosphorus/Indium Selenide Heterostructures. ACS Nano. 14(1). 434–441. 40 indexed citations

12.

Li, Lingfei, Anyuan Gao, Yaolong Zhao, et al.. (2019). Plasmon Excited Ultrahot Carriers and Negative Differential Photoresponse in a Vertical Graphene van der Waals Heterostructure. Nano Letters. 19(5). 3295–3304. 33 indexed citations

13.

Song, Hao, Shengnan Yan, Yang Wang, et al.. (2019). Edge‐Epitaxial Growth of InSe Nanowires toward High‐Performance Photodetectors. Small. 16(4). e1905902–e1905902. 25 indexed citations

14.

Wang, Yu, Erfu Liu, Anyuan Gao, et al.. (2018). Negative Photoconductance in van der Waals Heterostructure-Based Floating Gate Phototransistor. ACS Nano. 12(9). 9513–9520. 157 indexed citations

15.

Li, Yu, Zhen Zhu, Anyuan Gao, et al.. (2018). Electrically tunable optical properties of few-layer black arsenic phosphorus. Nanotechnology. 29(48). 484001–484001. 26 indexed citations

16.

Zeng, Junwen, Shi‐Jun Liang, Anyuan Gao, et al.. (2018). Gate-tunable weak antilocalization in a few-layer InSe. Physical review. B.. 98(12). 27 indexed citations

17.

Pan, Chen, Yajun Fu, Jiaxin Wang, et al.. (2018). Analog Circuit Applications Based on Ambipolar Graphene/MoTe₂ Vertical Transistors. Advanced Electronic Materials. 4(3). 25 indexed citations

18.

Zhang, Lili, Chenyu Wang, Xue‐Lu Liu, et al.. (2017). Damage-free and rapid transfer of CVD-grown two-dimensional transition metal dichalcogenides by dissolving sacrificial water-soluble layers. Nanoscale. 9(48). 19124–19130. 34 indexed citations

19.

Long, Mingsheng, Anyuan Gao, Peng Wang, et al.. (2017). Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus. Science Advances. 3(6). e1700589–e1700589. 485 indexed citations breakdown →

20.

Gao, Anyuan, Erfu Liu, Mingsheng Long, et al.. (2016). Gate-tunable rectification inversion and photovoltaic detection in graphene/WSe2 heterostructures. Applied Physics Letters. 108(22). 63 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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