С. В. Тихов

556 total citations
36 papers, 431 citations indexed

About

С. В. Тихов is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, С. В. Тихов has authored 36 papers receiving a total of 431 indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Electrical and Electronic Engineering, 15 papers in Atomic and Molecular Physics, and Optics and 8 papers in Materials Chemistry. Recurrent topics in С. В. Тихов's work include Advanced Memory and Neural Computing (19 papers), Semiconductor materials and devices (13 papers) and Semiconductor Quantum Structures and Devices (11 papers). С. В. Тихов is often cited by papers focused on Advanced Memory and Neural Computing (19 papers), Semiconductor materials and devices (13 papers) and Semiconductor Quantum Structures and Devices (11 papers). С. В. Тихов collaborates with scholars based in Russia, Greece and South Korea. С. В. Тихов's co-authors include И. Н. Антонов, Alexey Mikhaylov, D. I. Tetelbaum, A. I. Belov, Д. С. Королев, О. Н. Горшков, Д. А. Павлов, E.G. Gryaznov, M. N. Koryazhkina and А. П. Касаткин and has published in prestigious journals such as Nanomaterials, Materials Science and Engineering B and Semiconductor Science and Technology.

In The Last Decade

С. В. Тихов

34 papers receiving 411 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
С. В. Тихов Russia 10 374 195 70 47 47 36 431
K. E. Nikiruy Russia 13 507 1.4× 304 1.6× 171 2.4× 65 1.4× 47 1.0× 23 610
А. И. Бобров Russia 10 260 0.7× 98 0.5× 57 0.8× 109 2.3× 84 1.8× 36 354
Shimul Kanti Nath Australia 10 269 0.7× 78 0.4× 74 1.1× 125 2.7× 20 0.4× 33 362
Wenhao Chen United States 14 572 1.5× 194 1.0× 36 0.5× 131 2.8× 23 0.5× 38 678
Stanley Rogers United States 8 331 0.9× 199 1.0× 84 1.2× 10 0.2× 25 0.5× 25 367
Mirko Hansen Germany 13 381 1.0× 204 1.0× 136 1.9× 93 2.0× 16 0.3× 20 511
M. N. Koryazhkina Russia 12 503 1.3× 277 1.4× 183 2.6× 39 0.8× 18 0.4× 34 633
И. Н. Антонов Russia 16 697 1.9× 355 1.8× 188 2.7× 127 2.7× 62 1.3× 90 856
Saurabh K. Bose New Zealand 8 381 1.0× 127 0.7× 201 2.9× 26 0.6× 23 0.5× 13 438
E.G. Gryaznov Russia 9 454 1.2× 273 1.4× 151 2.2× 25 0.5× 12 0.3× 13 525

Countries citing papers authored by С. В. Тихов

Since Specialization
Citations

This map shows the geographic impact of С. В. Тихов's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by С. В. Тихов with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites С. В. Тихов more than expected).

Fields of papers citing papers by С. В. Тихов

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by С. В. Тихов. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by С. В. Тихов. The network helps show where С. В. Тихов may publish in the future.

Co-authorship network of co-authors of С. В. Тихов

This figure shows the co-authorship network connecting the top 25 collaborators of С. В. Тихов. A scholar is included among the top collaborators of С. В. Тихов based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with С. В. Тихов. С. В. Тихов is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Koryazhkina, M. N., Д. О. Филатов, С. В. Тихов, et al.. (2023). Electrical Characteristics of CMOS-Compatible SiOx-Based Resistive-Switching Devices. Nanomaterials. 13(14). 2082–2082. 2 indexed citations
2.
Koryazhkina, M. N., Д. О. Филатов, С. В. Тихов, et al.. (2022). Silicon-Compatible Memristive Devices Tailored by Laser and Thermal Treatments. Journal of Low Power Electronics and Applications. 12(1). 14–14. 3 indexed citations
3.
Koryazhkina, M. N., Д. О. Филатов, С. В. Тихов, et al.. (2021). Electrical Properties of Silicon-Oxide-Based Memristors on Silicon-on-Insulator Substrates. Nanobiotechnology Reports. 16(6). 745–754. 1 indexed citations
4.
Тихов, С. В., A. I. Belov, Д. С. Королев, et al.. (2020). Electrophysical Characteristics of Multilayer Memristive Nanostructures Based on Yttria-Stabilized Zirconia and Tantalum Oxide. Technical Physics. 65(2). 284–290. 5 indexed citations
5.
Тихов, С. В., О. Н. Горшков, И. Н. Антонов, et al.. (2018). Behavioral Features of MIS Memristors with a Si3N4 Nanolayer Fabricated on a Conductive Si Substrate. Semiconductors. 52(12). 1540–1546. 9 indexed citations
6.
Koryazhkina, M. N., С. В. Тихов, Alexey Mikhaylov, et al.. (2018). Bipolar resistive switching in metal-insulator-semiconductor nanostructures based on silicon nitride and silicon oxide. Journal of Physics Conference Series. 993. 12028–12028. 10 indexed citations
7.
Тихов, С. В., О. Н. Горшков, И. Н. Антонов, et al.. (2016). Change of immitance during electroforming and resistive switching in the metal-insulator-metal memristive structures based on SiO x. Technical Physics. 61(5). 745–749. 15 indexed citations
8.
9.
Тихов, С. В., et al.. (2015). Simulation of the effective concentration profiles in InGaAs/GaAs heterostructures containing δ-doped layers. Semiconductors. 49(1). 50–54. 3 indexed citations
10.
Тихов, С. В., О. Н. Горшков, И. Н. Антонов, А. П. Касаткин, & M. N. Koryazhkina. (2014). The forming process in resistive-memory elements based on metal-insulator-semiconductor structures. Technical Physics Letters. 40(10). 837–840. 8 indexed citations
11.
Тихов, С. В., О. Н. Горшков, Д. А. Павлов, et al.. (2014). Capacitors with nonlinear characteristics based on stabilized zirconia with built-in gold nanoparticles. Technical Physics Letters. 40(5). 369–371. 11 indexed citations
12.
Тихов, С. В., О. Н. Горшков, И. Н. Антонов, А. П. Касаткин, & M. N. Koryazhkina. (2013). Features of Fermi-level pinning at the interface of Al0.3Ga0.7As with anodic oxide and stabilized zirconia. Technical Physics Letters. 39(12). 1064–1067. 5 indexed citations
13.
Тихов, С. В., et al.. (2013). Photoelectron characteristics of diode structures based on quantum-well GaAs/InGaAs heteronanostructures with a Mn δ-doped layer. Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques. 7(1). 27–35. 1 indexed citations
14.
Тихов, С. В.. (2012). Small-signal field effect in GaAs/InAs quantum-dot heterostructures. Semiconductors. 46(10). 1274–1280. 1 indexed citations
15.
Тихов, С. В., et al.. (2012). Admittance spectroscopy of ring diode InGaAs/InAlAs/InP quantum-well structures. Semiconductors. 46(12). 1524–1528. 1 indexed citations
16.
Тихов, С. В., et al.. (2012). Field effect as a method for controlling the quality of i-InP-based heteronanostructures with two-dimensional electron gases. Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques. 6(6). 961–963. 1 indexed citations
17.
Тихов, С. В., et al.. (2012). Determination of the electron concentration and mobility in the vicinity of a quantum well and δ-doped layer in InGaAs/GaAs heterostructures. Semiconductors. 46(12). 1497–1501. 1 indexed citations
18.
Тихов, С. В., et al.. (2006). Formation of defects in GaAs and Si as a result of Pd deposition onto the surface. Semiconductors. 40(3). 314–318. 3 indexed citations
19.
Звонков, Б. Н., et al.. (2004). Tuning the energy spectrum of InAs/GaAs quantum dots by varying the thickness and composition of the thin double GaAs/InGaAs cladding layer. Semiconductors. 38(4). 431–436. 8 indexed citations
20.
Тихов, С. В., et al.. (1995). Pd/n-GaAs Schottky barrier as a photodetector for hydrogen. Technical Physics. 40(11). 1154–1156. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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