В. А. Гавва

497 total citations
30 papers, 327 citations indexed

About

В. А. Гавва is a scholar working on Materials Chemistry, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering. According to data from OpenAlex, В. А. Гавва has authored 30 papers receiving a total of 327 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Materials Chemistry, 12 papers in Atomic and Molecular Physics, and Optics and 10 papers in Electrical and Electronic Engineering. Recurrent topics in В. А. Гавва's work include Silicon Nanostructures and Photoluminescence (9 papers), Silicon and Solar Cell Technologies (8 papers) and Semiconductor materials and interfaces (7 papers). В. А. Гавва is often cited by papers focused on Silicon Nanostructures and Photoluminescence (9 papers), Silicon and Solar Cell Technologies (8 papers) and Semiconductor materials and interfaces (7 papers). В. А. Гавва collaborates with scholars based in Russia, Germany and Australia. В. А. Гавва's co-authors include S. G. Lyapin, Е. А. Екимов, M. V. Kondrin, Т.V. Kotereva, К. Н. Болдырев, R.A. Khmelnitskiy, М. Н. Попова, А. В. Гусев, V. S. Krivobok and Peter S. Sherin and has published in prestigious journals such as RSC Advances, Physical review. B. and Measurement Science and Technology.

In The Last Decade

В. А. Гавва

26 papers receiving 310 citations

Peers

В. А. Гавва

AMPO

EEE

GEOPH

SPU

Vern E. Bean United States

Dominic Windisch Germany

Carl J. Martin United States

М. Н. Дроздов Russia

Zhiqiang Chen China

Horace A. Bowman United States

Hans‐Peter Schildberg Germany

James C. Richley United Kingdom

E. Barsis United States

D.V. Morgan United States

Vern E. Bean United States

В. А. Гавва

123 ×0.6

68 ×0.7

AMPO

48 ×0.6

EEE

112 ×1.4

GEOPH

95 ×1.6

SPU

Citations per year, relative to В. А. Гавва В. А. Гавва (= 1×) peers Vern E. Bean

Countries citing papers authored by В. А. Гавва

Since Specialization

Citations

This map shows the geographic impact of В. А. Гавва's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by В. А. Гавва with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites В. А. Гавва more than expected).

Fields of papers citing papers by В. А. Гавва

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by В. А. Гавва. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by В. А. Гавва. The network helps show where В. А. Гавва may publish in the future.

Co-authorship network of co-authors of В. А. Гавва

This figure shows the co-authorship network connecting the top 25 collaborators of В. А. Гавва. A scholar is included among the top collaborators of В. А. Гавва based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with В. А. Гавва. В. А. Гавва is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Гавва, В. А., et al.. (2022). Preparation of Single-Crystal Isotopically Enriched 70Ge by a Hydride Method. Inorganic Materials. 58(3). 246–251.

Гавва, В. А., et al.. (2020). Preparation of Isotopically Enriched Polycrystalline Germanium via Monogermane Pyrolysis. Inorganic Materials. 56(3). 223–228. 1 indexed citations

Kotereva, Т.V., А. Д. Буланов, В. А. Гавва, et al.. (2019). Refractive index spectral dependence, Raman spectra, and transmission spectra of high-purity ⁷²Ge, ⁷³Ge, ⁷⁴Ge, ⁷⁶Ge, and ^natGe single crystals. Applied Optics. 58(27). 7489–7489. 3 indexed citations

Гавва, В. А., et al.. (2018). Melting point of high-purity germanium stable isotopes. Physica B Condensed Matter. 537. 12–14. 4 indexed citations

Екимов, Е. А., Peter S. Sherin, V. S. Krivobok, et al.. (2018). Photoluminescence excitation study of split-vacancy centers in diamond. Physical review. B.. 97(4). 15 indexed citations

Бражкин, В. В., S. G. Lyapin, А. П. Новиков, et al.. (2017). Quantum effects in silicon isotopes at low temperatures under normal and high pressures. Journal of Physics Communications. 1(5). 55005–55005. 4 indexed citations

Екимов, Е. А., V. S. Krivobok, S. G. Lyapin, et al.. (2017). Anharmonicity effects in impurity-vacancy centers in diamond revealed by isotopic shifts and optical measurements. Physical review. B.. 95(9). 33 indexed citations

Екимов, Е. А., S. G. Lyapin, К. Н. Болдырев, et al.. (2015). Germanium–vacancy color center in isotopically enriched diamonds synthesized at high pressures. Journal of Experimental and Theoretical Physics Letters. 102(11). 701–706. 97 indexed citations

Гусейнов, Д. В., et al.. (2013). Monoisotopic silicon 28Si in spin resonance spectroscopy of electrons localized at donors. Semiconductors. 47(2). 203–208. 3 indexed citations

10.

Гусев, А. В., et al.. (2013). Crucibles for Czochralski growth of isotopically enriched silicon single crystals. Inorganic Materials. 49(12). 1167–1169.

11.

Inyushkin, A. V., et al.. (2013). Thermal conductivity of the single-crystal monoisotopic 29Si in the temperature range 2.4–410 K. Physics of the Solid State. 55(1). 235–239. 6 indexed citations

12.

Плотниченко, В. Г., E. B. Kryukova, В. В. Колташев, et al.. (2011). Refractive index spectral dependence, Raman spectra, and transmission spectra of high-purity Si28, Si29, Si30, and Sinat single crystals. Applied Optics. 50(23). 4633–4633. 12 indexed citations

13.

Гусев, А. В., et al.. (2011). Preparation of single-crystal 29Si. Inorganic Materials. 47(7). 691–693. 5 indexed citations

14.

Плотниченко, В. Г., E. B. Kryukova, В. В. Колташев, et al.. (2010). Near- to mid-IR refractive index of²⁸Si,²⁹Si and³⁰Si monoisotopic single crystals. Quantum Electronics. 40(9). 753–755. 2 indexed citations

15.

Devyatykh, G. G., А. Д. Буланов, А. В. Гусев, et al.. (2008). High-purity single-crystal monoisotopic silicon-28 for precise determination of Avogadro’s number. Doklady Chemistry. 421(1). 157–160. 19 indexed citations

16.

Гусев, А. В. & В. А. Гавва. (2007). Behavior of phosphorus impurities during Czochralski growth of high‐purity germanium single crystals. Crystal Research and Technology. 42(11). 1073–1075. 1 indexed citations

17.

Becker, Peter, Detlef Schiel, O. N. Godisov, et al.. (2006). Large-scale production of highly enriched²⁸Si for the precise determination of the Avogadro constant. Measurement Science and Technology. 17(7). 1854–1860. 77 indexed citations

18.

Гусев, А. В., et al.. (2002). Thermal Conductivity of 28Si from 80 to 300 K. Inorganic Materials. 38(11). 1100–1102. 13 indexed citations

19.

Andreev, B. A., et al.. (1994). Copper in ultra-pure germanium: determination of the electrically active fraction. Semiconductor Science and Technology. 9(5). 1050–1053. 1 indexed citations

20.

Devyatykh, G. G., et al.. (1985). Detectors for spectrometry of the X-ray emission from germanium obtained by the hydride method. Atomic Energy. 58(4). 331–333. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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