Curtis M. Grens

420 total citations
24 papers, 323 citations indexed

About

Curtis M. Grens is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, Curtis M. Grens has authored 24 papers receiving a total of 323 indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Electrical and Electronic Engineering, 4 papers in Atomic and Molecular Physics, and Optics and 2 papers in Condensed Matter Physics. Recurrent topics in Curtis M. Grens's work include Radio Frequency Integrated Circuit Design (21 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers) and Silicon Carbide Semiconductor Technologies (5 papers). Curtis M. Grens is often cited by papers focused on Radio Frequency Integrated Circuit Design (21 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers) and Silicon Carbide Semiconductor Technologies (5 papers). Curtis M. Grens collaborates with scholars based in United States. Curtis M. Grens's co-authors include John D. Cressler, Joel M. Andrews, Alvin Joseph, Tushar Thrivikraman, Peng Cheng, Wei-Min Lance Kuo, Peng Cheng, Jonathan P. Comeau, Mark A. Mitchell and John Papapolymerou and has published in prestigious journals such as IEEE Journal of Solid-State Circuits, IEEE Transactions on Electron Devices and IEEE Transactions on Nuclear Science.

In The Last Decade

Curtis M. Grens

24 papers receiving 309 citations

Peers

Countries citing papers authored by Curtis M. Grens

Since Specialization

Citations

This map shows the geographic impact of Curtis M. Grens's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Curtis M. Grens with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Curtis M. Grens more than expected).

Fields of papers citing papers by Curtis M. Grens

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Curtis M. Grens. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Curtis M. Grens. The network helps show where Curtis M. Grens may publish in the future.

Co-authorship network of co-authors of Curtis M. Grens

This figure shows the co-authorship network connecting the top 25 collaborators of Curtis M. Grens. A scholar is included among the top collaborators of Curtis M. Grens based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Curtis M. Grens. Curtis M. Grens is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	The MATRICs RF-FPGA in 180nm SiGe-on-SOI BiCMOS 2015 ·(unknown), (unknown), (unknown), (unknown), Curtis M. Grens, (unknown), (unknown), (unknown), (unknown)	21
2	Reliability of SiGe HBTs for Power Amplifiers—Part II: Underlying Physics and Damage Modeling 2009 ·IEEE Transactions on Device and Materials Reliability ·Peng Cheng, Curtis M. Grens, John D. Cressler	27
3	A High-Linearity, X-Band, SiGe Low-Noise Amplifier for Improved Dynamic Range in Next-Generation Radar and Wireless Systems 2009 ·Tushar Thrivikraman, Curtis M. Grens, Wei-Min Lance Kuo, Joel M. Andrews, John D. Cressler	7
4	An experimental investigation of RF safe-operating-area (SOA) in SiGe HBTs on SOI 2009 ·Peng Cheng, (unknown), Curtis M. Grens, Tushar Thrivikraman, Marco Bellini, John D. Cressler, Jeff A. Babcock, Tianbing Chen, (unknown), (unknown)	5
5	Reliability of SiGe HBTs for Power Amplifiers—Part I: Large-Signal RF Performance and Operating Limits 2009 ·IEEE Transactions on Device and Materials Reliability ·Curtis M. Grens, Peng Cheng, John D. Cressler	36
6	Compact Modeling of Mutual Thermal Coupling for the Optimal Design of SiGe HBT Power Amplifiers 2009 ·IEEE Transactions on Electron Devices ·Joel M. Andrews, Curtis M. Grens, John D. Cressler	16
7	An Investigation of the Large-Signal RF Safe-Operating-Area on Aggressively-Biased Cascode SiGe HBTs for Power Amplifier Applications 2009 ·Curtis M. Grens, Peng Cheng, John D. Cressler	5
8	On Common–Base Avalanche Instabilities in SiGe HBTs 2008 ·IEEE Transactions on Electron Devices ·Curtis M. Grens, John D. Cressler, Alvin Joseph	16
9	A Silicon-Germanium Receiver for X-Band Transmit/Receive Radar Modules 2008 ·IEEE Journal of Solid-State Circuits ·Jonathan P. Comeau, (unknown), Wei-Min Lance Kuo, Tushar Thrivikraman, Joel M. Andrews, Curtis M. Grens, John D. Cressler, John Papapolymerou, Mark A. Mitchell	59
10	An 850 mW X-Band SiGe power amplifier 2008 ·Joel M. Andrews, John D. Cressler, Wei-Min Lance Kuo, Curtis M. Grens, Tushar Thrivikraman, S.D. Phillips	24
11	Modeling mixed-mode DC and RF stress in SiGe HBT power amplifiers 2008 ·Peng Cheng, Curtis M. Grens, (unknown), Partha Sarathi Chakraborty, John D. Cressler	9
12	The Effects of Scaling and Bias Configuration on Operating-Voltage Constraints in SiGe HBTs for Mixed-Signal Circuits 2007 ·IEEE Transactions on Electron Devices ·Curtis M. Grens, John D. Cressler, Joel M. Andrews, Qingqing Liang, Alvin Joseph	22
13	Large-Signal Performance, Linearity, and Reliability Characteristics of Aggressively-Biased Cascode SiGe HBTs for Power Amplifier Applications 2007 ·Curtis M. Grens, John D. Cressler, Alvin Joseph	9
14	A Monolithic 5-Bit SiGe BiCMOS Receiver for X-Band Phased-Array Radar Systems 2007 ·Jonathan P. Comeau, (unknown), Wei-Min Lance Kuo, Tushar Thrivikraman, Joel M. Andrews, Curtis M. Grens, John D. Cressler, John Papapolymerou, Mark A. Mitchell	11
15	Analysis of Factors Contributing to Common-Base Avalanche Instabilities in Advanced SiGe HBTs 2006 ·Curtis M. Grens, John D. Cressler, Alvin Joseph	2
16	The effects of layout variation on the thermal characteristics of SiGe HBTS 2005 ·Joel M. Andrews, Curtis M. Grens, John D. Cressler	4
17	Reliability issues associated with operating voltage constraints in advanced SiGe HBTs 2005 ·Curtis M. Grens, John D. Cressler, Joel M. Andrews, (unknown), Alvin Joseph	12
18	Assessing reliability issues in cryogenically-operated SiGe HBTs 2005 ·(unknown), Curtis M. Grens, (unknown), (unknown), John D. Cressler, Alvin Joseph	10
19	Substrate bias effects in vertical SiGe HBTs fabricated on CMOS-compatible thin film 2005 ·(unknown), Marco Bellini, (unknown), Jonathan P. Comeau, Akil K. Sutton, Curtis M. Grens, John D. Cressler, Jin Cai, T.H. Ning	7
20	The effects of proton irradiation on the operating voltage constraints of SiGe HBTs 2005 ·IEEE Transactions on Nuclear Science ·Curtis M. Grens, B.M. Haugerud, Akil K. Sutton, (unknown), John D. Cressler, Paul W. Marshall, Cheryl J. Marshall, Alvin Joseph	4

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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