C. Schwebel

453 total citations
33 papers, 375 citations indexed

About

C. Schwebel is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, C. Schwebel has authored 33 papers receiving a total of 375 indexed citations (citations by other indexed papers that have themselves been cited), including 27 papers in Electrical and Electronic Engineering, 16 papers in Computational Mechanics and 15 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in C. Schwebel's work include Ion-surface interactions and analysis (16 papers), Semiconductor materials and devices (13 papers) and Particle accelerators and beam dynamics (7 papers). C. Schwebel is often cited by papers focused on Ion-surface interactions and analysis (16 papers), Semiconductor materials and devices (13 papers) and Particle accelerators and beam dynamics (7 papers). C. Schwebel collaborates with scholars based in France, Israel and Germany. C. Schwebel's co-authors include Claude Pellet, G. Gautherin, F. Meyer, M. Eizenberg, J. Aubert, L. Wartski, P. Hesto, P. Legagneux, J. Siejka and G. Garry and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

C. Schwebel

32 papers receiving 351 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
C. Schwebel France 11 254 145 105 104 66 33 375
H. Mai Germany 12 99 0.4× 197 1.4× 79 0.8× 74 0.7× 173 2.6× 43 396
Randolph H. Burton United States 11 309 1.2× 67 0.5× 72 0.7× 134 1.3× 96 1.5× 15 416
J. Huc France 12 509 2.0× 411 2.8× 94 0.9× 106 1.0× 66 1.0× 22 673
Hirotaka Toyoda Hirotaka Toyoda Japan 10 416 1.6× 192 1.3× 34 0.3× 186 1.8× 133 2.0× 14 542
И. А. Каплунов Russia 10 190 0.7× 112 0.8× 98 0.9× 175 1.7× 48 0.7× 97 382
H. Steffen Switzerland 13 261 1.0× 155 1.1× 113 1.1× 171 1.6× 74 1.1× 27 445
R. Hugon France 13 249 1.0× 202 1.4× 26 0.2× 126 1.2× 175 2.7× 40 424
Birgitte Thestrup Denmark 12 252 1.0× 102 0.7× 75 0.7× 155 1.5× 97 1.5× 26 392
A. I. Belyaeva Ukraine 12 88 0.3× 166 1.1× 77 0.7× 67 0.6× 36 0.5× 59 353
T. A. Vanderslice United States 7 262 1.0× 117 0.8× 90 0.9× 96 0.9× 163 2.5× 15 406

Countries citing papers authored by C. Schwebel

Since Specialization
Citations

This map shows the geographic impact of C. Schwebel's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Schwebel with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Schwebel more than expected).

Fields of papers citing papers by C. Schwebel

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Schwebel. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Schwebel. The network helps show where C. Schwebel may publish in the future.

Co-authorship network of co-authors of C. Schwebel

This figure shows the co-authorship network connecting the top 25 collaborators of C. Schwebel. A scholar is included among the top collaborators of C. Schwebel based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Schwebel. C. Schwebel is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Devolder, T., et al.. (2004). Magnetic properties of Co/Al2O3/Co junctions deposited by ultra high vacuum ion beam sputtering. Materials Science and Engineering B. 109(1-3). 213–216. 4 indexed citations
2.
Wartski, L., et al.. (2001). Modified distributed electron cyclotron resonance ion source for the production of large diameter ion beams. Review of Scientific Instruments. 72(10). 3816–3825. 2 indexed citations
3.
Wartski, L., et al.. (1998). Recent trends in the design of large RF, microwave and ECR ion sources for the production of broad ion beams. Journal de Physique IV (Proceedings). 8(PR7). Pr7–173. 1 indexed citations
4.
Wartski, L., et al.. (1998). Electron cyclotron resonance applicator of the Wilkinson microwave power divider type for large diameter ion sources. Review of Scientific Instruments. 69(2). 843–845. 1 indexed citations
5.
Zolotoyabko, E., Wayne D. Kaplan, M. Eizenberg, et al.. (1997). Structural disorder in SiGe films grown epitaxially on Si by ion beam sputter deposition. Thin Solid Films. 294(1-2). 64–68. 6 indexed citations
6.
Eizenberg, M., et al.. (1995). Effect of growth conditions on the structural properties of ion beam sputter deposited SiGe epilayers. Journal of Applied Physics. 78(8). 4975–4981. 9 indexed citations
7.
Wartski, L., et al.. (1995). An optimized and simplified compact ECR ion source for gaseous species. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 101(4). 459–463. 8 indexed citations
8.
Mosleh, Nazanin, F. Meyer, C. Schwebel, Claude Pellet, & M. Eizenberg. (1994). Growth mode of Ge films on Si(100) substrate deposited by ion beam sputtering. Thin Solid Films. 246(1-2). 30–34. 5 indexed citations
9.
Pellet, Claude, et al.. (1993). Angular resolved energy distribution of secondary ions emitted from a silicon target sputtered by rare gas ions under oblique incidence. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 78(1-4). 294–299. 13 indexed citations
10.
Pellet, Claude, C. Desgranges, C. Schwebel, & J. Aubert. (1992). Angular-resolved energy distribution of secondary ions emitted from a silicon target sputtered by a xenon ion beam. Applied Physics A. 55(4). 359–363. 9 indexed citations
11.
Meyer, F., et al.. (1991). Raman scattering and stress measurements in Si1−xGex layers epitaxially grown on Si(100) by ion-beam sputter deposition. Journal of Applied Physics. 70(8). 4268–4277. 35 indexed citations
12.
Meyer, F., C. Schwebel, Claude Pellet, et al.. (1990). Epitaxial growth of single-crystal Si1−xGex on Si(100) by ion beam sputter deposition. Thin Solid Films. 184(1-2). 117–123. 21 indexed citations
13.
Bruyère, J.C., J. Pluta, M. Brunel, et al.. (1989). Superconducting properties of YBa2Cu3O7 − x thin films deposited on silicon covered by epitaxial stabilized ZrO2. Journal of the Less Common Metals. 151. 429–433. 7 indexed citations
14.
Meyer, F., et al.. (1989). Ion beam sputtering deposition of tungsten: Energy and mass effects of primary ions. Applied Surface Science. 38(1-4). 286–294. 18 indexed citations
15.
Schwebel, C. & G. Gautherin. (1988). Deposition of thin films by ion beam sputtering: Mechanisms and epitaxial growth. AIP conference proceedings. 167. 237–249. 1 indexed citations
16.
Legagneux, P., G. Garry, D. Dieumegard, et al.. (1988). Epitaxial growth of yttria-stabilized zirconia films on silicon by ultrahigh vacuum ion beam sputter deposition. Applied Physics Letters. 53(16). 1506–1508. 55 indexed citations
17.
Meyer, F., E. Vélu, Claude Pellet, C. Schwebel, & C. Dupas-Bruzek. (1988). Caractérisation du contact Mo/AsGa élaboré par pulvérisation ionique. Revue de Physique Appliquée. 23(5). 933–940. 2 indexed citations
18.
Schwebel, C., Claude Pellet, & G. Gautherin. (1986). Angular distributions of heavy particles emitted from a Si target during an ion beam sputter process. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 18(1-6). 525–528. 13 indexed citations
19.
Schwebel, C., F. Meyer, G. Gautherin, & Claude Pellet. (1986). Growth of silicon homoepitaxial thin films by ultrahigh vacuum ion beam sputter deposition. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 4(5). 1153–1158. 39 indexed citations
20.
Schwebel, C., et al.. (1976). Generation and Storage of Multiply-Charged Ions within a RF Quadrupole Trap. IEEE Transactions on Nuclear Science. 23(2). 991–993. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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