J. Huc

907 citations

22 papers · 673 indexed · h-index 12

Impact in

Electrical and Electronic Engineering top 10%
- Thin-Film Transistor Technologies
- Silicon and Solar Cell Technologies
- Semiconductor materials and devices
- Plasma Diagnostics and Applications
Materials Chemistry top 10%
- Silicon Nanostructures and Photoluminescence
- Diamond and Carbon-based Materials Research

Papers in ⓘ

Electrical and Electronic Engineering 10
- Thin-Film Transistor Technologies 8
- Silicon and Solar Cell Technologies 3
- Semiconductor materials and devices 3
Materials Chemistry 10
- Silicon Nanostructures and Photoluminescence 5

Co-authors: Ana Lloret (5 shared papers)Johannes Schmitt (4 shared papers)B. Drévillon (10 shared papers)J. Perrin (5 shared papers)G. De Rosny (10 shared papers)C. Godet (2 shared papers)J. C. Rostaing (2 shared papers)R. Etemadi (2 shared papers)
Journals: Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (3 papers)Applied Physics Letters (2 papers)Physics Letters B (2 papers)Thin Solid Films (2 papers)Vacuum (1 paper)
Partner nations: France Italy United Kingdom

In The Last Decade

J. Huc

21 papers receiving 648 citations

Peers

Countries citing papers authored by J. Huc

Since Specialization

Citations

This map shows the geographic impact of J. Huc's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Huc with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Huc more than expected).

Fields of papers citing papers by J. Huc

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Huc. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Huc. The network helps show where J. Huc may publish in the future.

Co-authors

The 25 scholars most cited alongside J. Huc, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Huc Line = papers co-authored together J. Huc links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 22 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	A fully automated hot-wall multiplasma-monochamber reactor for thin film deposition Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Pere Roca I Cabarrocas, J.B. Chevrier, J. Huc, Ana Lloret, J. Y. Parey, Johannes Schmitt	1991	198
2	Dissociation cross sections of silane and disilane by electron impact Chemical Physics ·J. Perrin, Johannes Schmitt, G. De Rosny, B. Drévillon, J. Huc, Ana Lloret	1982	136
3	Growth of hydrogenated amorphous silicon due to controlled ion bombardment from a pure silane plasma Applied Physics Letters ·B. Drévillon, J. Perrin, J. M. Siefert, J. Huc, Ana Lloret, G. De Rosny, Johannes Schmitt	1983	75
4	Silane dissociation mechanisms and thin film formation in a low pressure multipole dc discharge Applied Physics Letters ·B. Drévillon, J. Huc, Ana Lloret, J. Perrin, G. De Rosny, Johannes Schmitt	1980	67
5	Dual-plasma reactor for low temperature deposition of wide band-gap silicon alloys Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·R. Etemadi, C. Godet, J. Perrin, B. Drévillon, J. Huc, J. Y. Parey, J. C. Rostaing, F. Cœuret	1997	30
6	Silicon-based, protective transparent multilayer coatings deposited at high rate on optical polymers by dual-mode MW/r.f. PECVD Thin Solid Films ·J. C. Rostaing, F. Cœuret, B. Drévillon, R. Etemadi, C. Godet, J. Huc, J. Y. Parey, V. A. Yakovlev	1993	29
7	Fast Deposition of Polycrystalline Silicon Films by Hot-Wire CVD MRS Proceedings ·A. R. Middya, Ana Lloret, J. Perrin, J. Huc, Jean-Luc Moncel, J. Y. Parey, G. Rose	1995	29
8	A ϱ−π− enhancement at 1.32 GeV observed in 5 GeV/c π−d interactions Physics Letters B ·R. Vanderhagen, J. Huc, P. Fleury, J. Duboc, R. George, M. Goldberg, B. Makowski, N. Armenise, B. Ghidini, V. Picciarelli, A. Romano, A. Forino, R. Gessaroli, G. Quareni, A. Quareni-Vignudelli	1967	20
9	In-Situ Excimer Laser Induced Crystallization of Hydrogenated Amorphous Silicon Thin Films Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·N. Layadi, Pere Roca i Cabarrocas, J. Huc, J. Y. Parey, B. Drévillon	1994	15
10	Ion bombardment effect on the growth of a-Si:H films deposited from a pure silane plasma Journal of Non-Crystalline Solids ·B. Drévillon, J. Huc, N. Boussarssar	1983	14
11	Complete Mueller matrix measurement with a single high frequency modulation Thin Solid Films ·Eric Compain, B. Drévillon, J. Huc, Jean Yves Parey, J.E. Bourée	1998	13
12	Experimental investigation on helicity conservation Lettere al nuovo cimento della societa italiana di fisica/Lettere al nuovo cimento ·D. Kemp, S. M. Scarrott, R. Contri, D. Teodoro, G. Tomasini, E. Calligarich, Sergio P Ratti, G. Vegni, J. Huc, G. De Rosny, R. Sosnowski, B. Terreault, G. Thermes, M. Barrier, J. Bozoki, Khiem Nguyen, Z. Strachman	1971	12
13	Deposition of silicon alloys in an integrated distributed electron cyclotron resonance reactor: Oxide, nitride, oxinitrides, and multilayer structures Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Pavel Bulkin, A. Hofrichter, T. Heitz, J. Huc, B. Drévillon, J. J. Benattar	2002	8
14	Production of neutral particles in π+ -d interactions at 6 GeV/c and I- spin of fo Physics Letters ·F. Bruyant, M. Goldberg, M. Holder, M. Krammer, J.V. Major, G. Vegni, H. Winzeler, P. Fleury, J. Huc, R. Lestienne, G. De Rosny, R. Vanderhaghen	1964	8
15	Nππ enhancements observed in the reaction π−n → pπ−π−πo at 5 GeV/c Physics Letters B ·P. Fleury, J. Huc, R. Vanderhaghen, J. Duboc, R. George, M. Goldberg, V. Picciarelli, A. Romano, A. Quareni-Vignudelli	1968	5
16	Cross section for the charge exchange reaction π4 + n → p + π0 at 6 GeV/c pion momentum Physics Letters ·F. Bruyant, M. Goldberg, G. Vegni, H. Winzeler, P. Fleury, J. Huc, R. Lestienne, G. De Rosny, R. Vanderhaghen	1964	4
17	A study of the reactions π+d → dπ+π−π+ and π+d → dπ+π−π+π0 at 11.7 GeV/c Nuovo cimento della Società italiana di fisica. A, Nuclei, particles and fields ·D. Kemp, M. C. Scarrott, R. Contri, D. Teodoro, G. Tomasini, E. Calligarich, S. P. Ratti, J. Huc, G. De Rosny, R. Sosnowski, M. Barrier, G. Bozóki, Antônio de Amorim Brandão, H.K. Nguyen	1976	4
18	Désintégration du 134Cs Journal de physique ·J. Huc, R. Foucher	1965	2
19	Resonance production in the reactions π+d→p s pπ+π− and π+d→p s pπ+π−π0 at 11.7 GeV/c Nuovo cimento della Società italiana di fisica. A, Nuclei, particles and fields ·D. Kemp, A. P. Lotts, S. M. Scarrott, R. Contri, D. Teodoro, G. Tomasini, E. Calligarich, A. Sala, G. Vegni, G. De Rosny, J. Huc, B. Terreault, R. Sosnowski, M. Barrier, Antônio de Amorim Brandão, J. Quinquard, Khiem Nguyen	1975	1
20	Is there structure in the f0 mass region? Nuovo cimento della Società italiana di fisica. A, Nuclei, particles and fields ·D. Kemp, J.V. Major, S. M. Scarrott, R. Contri, D. Teodoro, G. Tomasini, E. Calligarich, S. P. Ratti, G. Vegni, G. De Rosny, J. Huc, R. Sosnowski, J. M. Terreault, M. Barrier, H.K. Nguyen, J. Quinquard	1972	1

About J. Huc

J. Huc is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Nuclear and High Energy Physics, Computational Mechanics and Atomic and Molecular Physics, and Optics, having authored 22 papers that have together received 673 indexed citations. Recurring topics across this work include Thin-Film Transistor Technologies (8 papers), Quantum Chromodynamics and Particle Interactions (7 papers), Particle physics theoretical and experimental studies (7 papers), High-Energy Particle Collisions Research (6 papers), Silicon Nanostructures and Photoluminescence (5 papers), Silicon and Solar Cell Technologies (3 papers), Semiconductor materials and devices (3 papers) and Ion-surface interactions and analysis (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (509 citations), Materials Chemistry (411 citations), Computational Mechanics (94 citations), Nuclear and High Energy Physics (56 citations) and Surfaces, Coatings and Films (26 citations). J. Huc has collaborated with scholars based in France, Italy and United Kingdom. Frequent co-authors include Ana Lloret, Johannes Schmitt, B. Drévillon, J. Perrin, G. De Rosny, C. Godet, J. C. Rostaing, R. Etemadi, F. Cœuret and P. Fleury. Their work appears in journals such as Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Applied Physics Letters, Physics Letters B, Thin Solid Films and Vacuum.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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