Y. Mitsui

539 total citations
50 papers, 401 citations indexed

About

Y. Mitsui is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, Y. Mitsui has authored 50 papers receiving a total of 401 indexed citations (citations by other indexed papers that have themselves been cited), including 49 papers in Electrical and Electronic Engineering, 19 papers in Atomic and Molecular Physics, and Optics and 5 papers in Condensed Matter Physics. Recurrent topics in Y. Mitsui's work include Radio Frequency Integrated Circuit Design (28 papers), Semiconductor Quantum Structures and Devices (16 papers) and Photonic and Optical Devices (14 papers). Y. Mitsui is often cited by papers focused on Radio Frequency Integrated Circuit Design (28 papers), Semiconductor Quantum Structures and Devices (16 papers) and Photonic and Optical Devices (14 papers). Y. Mitsui collaborates with scholars based in Japan, Germany and United States. Y. Mitsui's co-authors include Takayuki Katoh, Takao Ishida, Yasunori Miyazaki, T. Aoyagi, S. Mitsui, Kazuya Yamamoto, Tatsuya Kashiwa, Akira Ohta, Masashi Nakatani and Akira Inoue and has published in prestigious journals such as IEEE Journal of Solid-State Circuits, IEEE Transactions on Microwave Theory and Techniques and IEEE Transactions on Electron Devices.

In The Last Decade

Y. Mitsui

49 papers receiving 374 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Y. Mitsui Japan 12 390 134 56 23 14 50 401
M. Tutt United States 11 380 1.0× 179 1.3× 49 0.9× 43 1.9× 12 0.9× 42 402
C.S. Wu United States 11 312 0.8× 134 1.0× 83 1.5× 16 0.7× 10 0.7× 36 320
D.-W. Tu United States 10 266 0.7× 206 1.5× 40 0.7× 22 1.0× 10 0.7× 18 299
M. Hirayama Japan 12 330 0.8× 125 0.9× 30 0.5× 33 1.4× 6 0.4× 37 349
J. Gering United States 11 287 0.7× 163 1.2× 47 0.8× 35 1.5× 6 0.4× 26 311
Kazuhisa Yamauchi Japan 11 407 1.0× 96 0.7× 120 2.1× 23 1.0× 16 1.1× 31 446
A.A. Jabra United States 8 446 1.1× 326 2.4× 63 1.1× 18 0.8× 6 0.4× 17 467
W.J. Ho United States 11 414 1.1× 175 1.3× 106 1.9× 33 1.4× 12 0.9× 48 417
A. Higashisaka Japan 9 299 0.8× 94 0.7× 48 0.9× 60 2.6× 13 0.9× 39 321
Jichai Jeong South Korea 12 314 0.8× 115 0.9× 12 0.2× 23 1.0× 9 0.6× 27 339

Countries citing papers authored by Y. Mitsui

Since Specialization
Citations

This map shows the geographic impact of Y. Mitsui's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Y. Mitsui with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Y. Mitsui more than expected).

Fields of papers citing papers by Y. Mitsui

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Y. Mitsui. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Y. Mitsui. The network helps show where Y. Mitsui may publish in the future.

Co-authorship network of co-authors of Y. Mitsui

This figure shows the co-authorship network connecting the top 25 collaborators of Y. Mitsui. A scholar is included among the top collaborators of Y. Mitsui based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Y. Mitsui. Y. Mitsui is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Hino, Shiro, et al.. (2019). Superior Switching Characteristics of SiC-MOSFET Embedding SBD. 27–30. 19 indexed citations
2.
Mitsui, Y., et al.. (2018). 6.5-kV Full-SiC Power Module (HV100) with SBD-embedded SiC-MOSFETs. 1–7. 14 indexed citations
3.
Yagi, T., et al.. (2003). High-power and highly reliable 1020-nm ridge waveguide laser diodes with small aspect ratio as a pumping source for praseodymium-doped fiber amplifiers. IEEE Photonics Technology Letters. 15(5). 640–642. 4 indexed citations
4.
Miyazaki, Yasunori, et al.. (2003). Small-chirp 40-Gbps electroabsorption modulator with novel tensile-strained asymmetric quantum-well absorption layer. IEEE Journal of Quantum Electronics. 39(6). 813–819. 23 indexed citations
5.
Yamamoto, Kazuya, Minoru Noda, H. Ishida, et al.. (2003). A 1.9 GHz-band GaAs direct-quadrature modulator IC with a phase shifter. 37–40.
6.
Yagi, T., Y. Yoshida, M. Miyashita, et al.. (2003). High-power, high-efficiency 660-nm laser diodes for DVD-R/RW. 31. 129–130. 1 indexed citations
7.
Miyashita, M., Kazuya Yamamoto, Takaaki Shimura, et al.. (2003). An ultra broadband GaAs MESFET preamplifier IC for a 10 Gb/s optical communication system. 89–92. 1 indexed citations
8.
Yoshida, Y., et al.. (2002). New High Power Ridge-Waveguide 980 nm Laser Diodes With Window Structure. European Conference on Optical Communication. 3. 1–2. 2 indexed citations
9.
Miyazaki, Yasunori, et al.. (2002). Small-chirp 40Gbps EA modulator with novel tensile-strained asymmetric quantum well absorption layer. European Conference on Optical Communication. 4. 1–2. 4 indexed citations
10.
Katoh, Takayuki, et al.. (2002). Ka-band ultra low noise MMIC amplifier using pseudomorphic HEMTs. 1. 17–20. 26 indexed citations
11.
Ishikawa, T., et al.. (2002). A novel FET structure of buried plated heat sink for superior high performance GaAs MMICs. 233–236. 6 indexed citations
12.
Sasaki, Y., et al.. (2002). A Ka-band compact 1 watt power amplifier using a Platy-TRL matching method. 1. 284–287. 3 indexed citations
13.
Ishida, Takao, Tomoko Ishikawa, Y. Mitsui, et al.. (1999). Analyses on Monolithic InP HEMT Resistive Mixer Operating under Very Low LO Power. IEICE Transactions on Electronics. 82(10). 1831–1838. 1 indexed citations
14.
Kashiwa, Tatsuya, et al.. (1998). K/Ka-band MMIC and PHEMT for satellite communications. 2 indexed citations
15.
Kashiwa, Tatsuya, et al.. (1998). V-band high-power low phase-noise monolithic oscillators and investigation of low phase-noise performance high drain bias. IEEE Transactions on Microwave Theory and Techniques. 46(10). 1559–1565. 20 indexed citations
16.
Itoh, Yasushi, et al.. (1995). A 5-10 GHz 15-W GaAs MESFET amplifier with flat gain and power responses. IEEE Microwave and Guided Wave Letters. 5(12). 454–456. 3 indexed citations
17.
Miyashita, M., Kazuya Yamamoto, Takaaki Shimura, et al.. (1992). An ultra-broadband GaAs MESFET preamplifier IC for a 10 Gb/s optical communication system. IEEE Transactions on Microwave Theory and Techniques. 40(12). 2439–2444. 12 indexed citations
18.
Morimoto, Hiroshi, et al.. (1987). A GaAs metal-semiconductor field-effect transistor with a mushroom gate fabricated by mixed exposure of focused ion beams. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 5(1). 211–214. 7 indexed citations
19.
Mitsui, Y., et al.. (1979). Flip-chip mounted GaAs power f.e.t. with improved performance in X- to Ku-band. Electronics Letters. 15(15). 461–462. 3 indexed citations
20.
Mitsui, Y., et al.. (1978). High-power GaAs f.e.t. prepared by molecular-beam epitaxy. Electronics Letters. 14(24). 759–761. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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