P. M. Campbell

5.1k total citations · 2 hit papers
51 papers, 3.8k citations indexed

About

P. M. Campbell is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, P. M. Campbell has authored 51 papers receiving a total of 3.8k indexed citations (citations by other indexed papers that have themselves been cited), including 36 papers in Electrical and Electronic Engineering, 32 papers in Atomic and Molecular Physics, and Optics and 22 papers in Materials Chemistry. Recurrent topics in P. M. Campbell's work include Semiconductor materials and devices (20 papers), Force Microscopy Techniques and Applications (18 papers) and Graphene research and applications (17 papers). P. M. Campbell is often cited by papers focused on Semiconductor materials and devices (20 papers), Force Microscopy Techniques and Applications (18 papers) and Graphene research and applications (17 papers). P. M. Campbell collaborates with scholars based in United States. P. M. Campbell's co-authors include E. S. Snow, Glenn G. Jernigan, James P. Novak, F. Keith Perkins, Adam L. Friedman, Enrique Cobas, Berend T. Jonker, P. J. McMarr, Mario G. Ancona and D. Kurt Gaskill and has published in prestigious journals such as Science, Nano Letters and Applied Physics Letters.

In The Last Decade

P. M. Campbell

51 papers receiving 3.7k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Chemical Vapor Sensing with Monolayer MoS₂

2013 992 citations F. Keith Perkins, Adam L. Friedman et al. Nano Letters profile →
Random networks of carbon nanotubes as an electronic material

2003 575 citations E. S. Snow, James P. Novak et al. Applied Physics Letters profile →

Peers

P. M. Campbell

MC

EEE

BE

AMPO

PP

Ant Ural United States

Enrique Cobas United States

Samaresh Das India

Jien Cao United States

Hyun‐Jong Chung South Korea

Young‐Jun Yu South Korea

Toby Hallam Ireland

W. K. Chim Singapore

Jonghwa Eom South Korea

Franz Kreupl Germany

Ant Ural United States

P. M. Campbell

2.6k ×1.1

MC

1.9k ×0.9

EEE

1.3k ×0.9

BE

771 ×0.5

AMPO

261 ×1.4

PP

Citations per year, relative to P. M. Campbell P. M. Campbell (= 1×) peers Ant Ural

Countries citing papers authored by P. M. Campbell

Since Specialization

Citations

This map shows the geographic impact of P. M. Campbell's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. M. Campbell with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. M. Campbell more than expected).

Fields of papers citing papers by P. M. Campbell

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. M. Campbell. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. M. Campbell. The network helps show where P. M. Campbell may publish in the future.

Co-authorship network of co-authors of P. M. Campbell

This figure shows the co-authorship network connecting the top 25 collaborators of P. M. Campbell. A scholar is included among the top collaborators of P. M. Campbell based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. M. Campbell. P. M. Campbell is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

1.

Tarasov, Alexey, P. M. Campbell, Z. Razavi Hesabi, et al.. (2014). Dual-gated field-effect transistors made from wafer-scale synthetic few-layer molybdenum disulfide. 6. 85–86. 1 indexed citations

2.

Moon, J. S., M. Antcliffe, C. McGuire, et al.. (2013). Graphene FETs for Zero-Bias Linear Resistive FET Mixers. IEEE Electron Device Letters. 34(3). 465–467. 48 indexed citations

3.

Nyakiti, Luke O., Rachael L. Myers‐Ward, Virginia D. Wheeler, et al.. (2012). Bilayer Graphene Grown on 4H-SiC (0001) Step-Free Mesas. Nano Letters. 12(4). 1749–1756. 49 indexed citations

4.

Moon, Jeong‐Sun, Daniel J. Curtis, Ming Hu, et al.. (2010). Top-Gated Epitaxial Graphene FETs on Si-Face SiC Wafers With a Peak Transconductance of 600 mS/mm. IEEE Electron Device Letters. 31(4). 260–262. 110 indexed citations

5.

Moon, J. S., Daniel J. Curtis, Ming Hu, et al.. (2009). Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates. IEEE Electron Device Letters. 30(6). 650–652. 265 indexed citations

6.

Snow, E. S., P. M. Campbell, Mario G. Ancona, & James P. Novak. (2005). High-mobility carbon-nanotube thin-film transistors on a polymeric substrate. Applied Physics Letters. 86(3). 215 indexed citations

7.

Snow, E. S., P. M. Campbell, M. E. Twigg, & F. Keith Perkins. (2001). Ultrathin PtSi layers patterned by scanned probe lithography. Applied Physics Letters. 79(8). 1109–1111. 9 indexed citations

8.

Buot, F. A., R. W. Rendell, E. S. Snow, et al.. (1998). Dependence of gate control on the aspect ratio in metal/metal-oxide/metal tunnel transistors. Journal of Applied Physics. 84(2). 1133–1139. 5 indexed citations

9.

Snow, E. S., P. M. Campbell, R. W. Rendell, et al.. (1998). A metal/oxide tunnelling transistor. Semiconductor Science and Technology. 13(8A). A75–A78. 22 indexed citations

10.

Snow, E. S., P. M. Campbell, & F. Keith Perkins. (1997). Nanofabrication with proximal probes. Proceedings of the IEEE. 85(4). 601–611. 47 indexed citations

11.

Snow, E. S., P. M. Campbell, & Daeui Park. (1996). Metal point contacts and metal-oxide tunnel barriers fabricated with an AFM. Superlattices and Microstructures. 20(4). 545–553. 11 indexed citations

12.

Campbell, P. M., E. S. Snow, & P. J. McMarr. (1995). Fabrication of nanometer-scale side-gated silicon field effect transistors with an atomic force microscope. Applied Physics Letters. 66(11). 1388–1390. 138 indexed citations

13.

Campbell, P. M., E. S. Snow, & P. J. McMarr. (1994). Fabrication of nanometer-scale conducting silicon wires with a scanning tunneling microscope. Solid-State Electronics. 37(4-6). 583–586. 12 indexed citations

14.

Snow, E. S., P. M. Campbell, & B. V. Shanabrook. (1993). Fabrication of GaAs nanostructures with a scanning tunneling microscope. Applied Physics Letters. 63(25). 3488–3490. 38 indexed citations

15.

Campbell, P. M., et al.. (1986). Prevention of thermal surface damage in GaAs by encapsulated annealing in an arsine ambient. Journal of Electronic Materials. 15(3). 125–131. 8 indexed citations

16.

Baliga, B. Jayant, et al.. (1985). Gallium arsenide Schottky power rectifiers. IEEE Transactions on Electron Devices. 32(6). 1130–1134. 20 indexed citations

17.

Campbell, P. M. & B. Jayant Baliga. (1985). Beryllium Ion‐Implanted Junctions in GaAs with Submicron Lateral Diffusion. Journal of The Electrochemical Society. 132(1). 186–189. 1 indexed citations

18.

Baliga, B. Jayant, et al.. (1984). Extended measurements of gallium arsenide breakdown characteristics using punchthrough structures. IEEE Electron Device Letters. 5(9). 385–387. 2 indexed citations

19.

Campbell, P. M., et al.. (1984). Trapezoidal-groove Schottky-gate vertical channel GaAs FET (GaAs static induction transistor). 186–189. 1 indexed citations

20.

Campbell, P. M., et al.. (1982). 150 Volt vertical channel GaAs FET. 258–260. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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