Bernhard Loitsch

702 total citations
20 papers, 572 citations indexed

About

Bernhard Loitsch is a scholar working on Biomedical Engineering, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering. According to data from OpenAlex, Bernhard Loitsch has authored 20 papers receiving a total of 572 indexed citations (citations by other indexed papers that have themselves been cited), including 13 papers in Biomedical Engineering, 12 papers in Atomic and Molecular Physics, and Optics and 9 papers in Electrical and Electronic Engineering. Recurrent topics in Bernhard Loitsch's work include Nanowire Synthesis and Applications (13 papers), Semiconductor Quantum Structures and Devices (10 papers) and Advancements in Semiconductor Devices and Circuit Design (5 papers). Bernhard Loitsch is often cited by papers focused on Nanowire Synthesis and Applications (13 papers), Semiconductor Quantum Structures and Devices (10 papers) and Advancements in Semiconductor Devices and Circuit Design (5 papers). Bernhard Loitsch collaborates with scholars based in Germany, United States and Singapore. Bernhard Loitsch's co-authors include Gregor Koblmüller, Jonathan J. Finley, G. Abstreiter, Stefanie Morkötter, Markus Döblinger, Daniel Rudolph, Sonja Matich, Lincoln J. Lauhon, Nari Jeon and B. Mayer and has published in prestigious journals such as Advanced Materials, Nano Letters and ACS Nano.

In The Last Decade

Bernhard Loitsch

19 papers receiving 560 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Bernhard Loitsch Germany 14 415 349 316 218 94 20 572
Nicolas Cavassilas France 16 267 0.6× 390 1.1× 644 2.0× 229 1.1× 85 0.9× 76 849
Jonathan Becker Germany 13 367 0.9× 275 0.8× 339 1.1× 225 1.0× 51 0.5× 15 532
Fabienne Michelini France 15 166 0.4× 375 1.1× 377 1.2× 202 0.9× 90 1.0× 65 629
L. E. Fröberg Sweden 11 640 1.5× 395 1.1× 565 1.8× 329 1.5× 53 0.6× 16 847
Alan C. Farrell United States 14 449 1.1× 345 1.0× 468 1.5× 160 0.7× 32 0.3× 26 614
S. J. Gibson Canada 8 330 0.8× 183 0.5× 233 0.7× 146 0.7× 62 0.7× 8 425
B. Mayer Switzerland 11 478 1.2× 503 1.4× 524 1.7× 164 0.8× 64 0.7× 23 704
M. Bombeck Germany 10 138 0.3× 322 0.9× 213 0.7× 180 0.8× 58 0.6× 13 500
J. M. Llorens Spain 16 179 0.4× 424 1.2× 409 1.3× 154 0.7× 66 0.7× 54 608
A. S. Salasyuk Russia 9 126 0.3× 278 0.8× 176 0.6× 117 0.5× 33 0.4× 12 405

Countries citing papers authored by Bernhard Loitsch

Since Specialization
Citations

This map shows the geographic impact of Bernhard Loitsch's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Bernhard Loitsch with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Bernhard Loitsch more than expected).

Fields of papers citing papers by Bernhard Loitsch

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Bernhard Loitsch. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Bernhard Loitsch. The network helps show where Bernhard Loitsch may publish in the future.

Co-authorship network of co-authors of Bernhard Loitsch

This figure shows the co-authorship network connecting the top 25 collaborators of Bernhard Loitsch. A scholar is included among the top collaborators of Bernhard Loitsch based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Bernhard Loitsch. Bernhard Loitsch is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Müller, Marcus, F. Bertram, Peter Veit, et al.. (2019). Nanoscale mapping of carrier recombination in GaAs/AlGaAs core-multishell nanowires by cathodoluminescence imaging in a scanning transmission electron microscope. Applied Physics Letters. 115(24). 4 indexed citations
2.
Carrad, Damon J., Bernhard Loitsch, Markus Döblinger, et al.. (2019). Quantum‐Confinement‐Enhanced Thermoelectric Properties in Modulation‐Doped GaAs–AlGaAs Core–Shell Nanowires. Advanced Materials. 32(4). e1905458–e1905458. 22 indexed citations
3.
Jeon, Nari, Markus Döblinger, Sonja Matich, et al.. (2018). Connecting Composition-Driven Faceting with Facet-Driven Composition Modulation in GaAs–AlGaAs Core–Shell Nanowires. Nano Letters. 18(8). 5179–5185. 13 indexed citations
4.
Becker, Jonathan, Nari Jeon, Markus Döblinger, et al.. (2018). He-Ion Microscopy as a High-Resolution Probe for Complex Quantum Heterostructures in Core–Shell Nanowires. Nano Letters. 18(6). 3911–3919. 12 indexed citations
5.
Carrad, Damon J., Jonathan Becker, Nari Jeon, et al.. (2017). Quantum Transport and Sub-Band Structure of Modulation-Doped GaAs/AlAs Core–Superlattice Nanowires. Nano Letters. 17(8). 4886–4893. 17 indexed citations
6.
Zimmermann, P., Bernhard Loitsch, Markus Döblinger, et al.. (2016). Coaxial GaAs-AlGaAs core-multishell nanowire lasers with epitaxial gain control. Applied Physics Letters. 108(1). 53 indexed citations
7.
Loitsch, Bernhard, Nari Jeon, Markus Döblinger, et al.. (2016). Suppression of alloy fluctuations in GaAs-AlGaAs core-shell nanowires. Applied Physics Letters. 109(9). 16 indexed citations
8.
Loitsch, Bernhard, Marcus Müller, Julia Winnerl, et al.. (2016). Microscopic nature of crystal phase quantum dots in ultrathin GaAs nanowires by nanoscale luminescence characterization. New Journal of Physics. 18(6). 63009–63009. 10 indexed citations
9.
Sun, Bo, Bernhard Loitsch, Martin S. Brandt, et al.. (2016). Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices. AIP Advances. 6(4). 28 indexed citations
10.
Gliserin, Alexander, Jürgen Schmidt, F. Schertz, et al.. (2016). Laser intensity effects in carrier-envelope phase-tagged time of flight-photoemission electron microscopy. Applied Physics B. 122(4). 6 indexed citations
11.
Mayer, B., Daniel Rudolph, Bernhard Loitsch, et al.. (2016). Continuous wave lasing from individual GaAs-AlGaAs core-shell nanowires. Applied Physics Letters. 108(7). 22 indexed citations
12.
Mayer, B., Bernhard Loitsch, Julian Treu, et al.. (2015). Monolithically Integrated High-β Nanowire Lasers on Silicon. Nano Letters. 16(1). 152–156. 104 indexed citations
13.
Morkötter, Stefanie, Nari Jeon, Daniel Rudolph, et al.. (2015). Demonstration of Confined Electron Gas and Steep-Slope Behavior in Delta-Doped GaAs-AlGaAs Core–Shell Nanowire Transistors. Nano Letters. 15(5). 3295–3302. 53 indexed citations
14.
Jeon, Nari, Bernhard Loitsch, G. Abstreiter, et al.. (2015). Alloy Fluctuations Act as Quantum Dot-like Emitters in GaAs-AlGaAs Core–Shell Nanowires. ACS Nano. 9(8). 8335–8343. 53 indexed citations
15.
Loitsch, Bernhard, Julia Winnerl, Gianluca Grimaldi, et al.. (2015). Crystal Phase Quantum Dots in the Ultrathin Core of GaAs–AlGaAs Core–Shell Nanowires. Nano Letters. 15(11). 7544–7551. 50 indexed citations
16.
Loitsch, Bernhard, Daniel Rudolph, Stefanie Morkötter, et al.. (2015). Semiconductor Nanowires: Tunable Quantum Confinement in Ultrathin, Optically Active Semiconductor Nanowires Via Reverse‐Reaction Growth (Adv. Mater. 13/2015). Advanced Materials. 27(13). 2125–2125.
17.
Loitsch, Bernhard, Daniel Rudolph, Stefanie Morkötter, et al.. (2015). Tunable Quantum Confinement in Ultrathin, Optically Active Semiconductor Nanowires Via Reverse‐Reaction Growth. Advanced Materials. 27(13). 2195–2202. 48 indexed citations
18.
Loitsch, Bernhard, et al.. (2014). Trade-off between morphology, extended defects, and compositional fluctuation induced carrier localization in high In-content InGaN films. Journal of Applied Physics. 116(5). 18 indexed citations
19.
Rudolph, Daniel, Lucas Schweickert, Stefanie Morkötter, et al.. (2014). Effect of interwire separation on growth kinetics and properties of site-selective GaAs nanowires. Applied Physics Letters. 105(3). 34 indexed citations
20.
Loitsch, Bernhard, Fabian Schuster, M. Stutzmann, & Gregor Koblmüller. (2013). Reduced threading dislocation densities in high-T/N-rich grown InN films by plasma-assisted molecular beam epitaxy. Applied Physics Letters. 102(5). 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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