A.P. Webb

1.0k total citations
26 papers, 837 citations indexed

About

A.P. Webb is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Materials Chemistry. According to data from OpenAlex, A.P. Webb has authored 26 papers receiving a total of 837 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 13 papers in Computational Mechanics and 13 papers in Materials Chemistry. Recurrent topics in A.P. Webb's work include Ion-surface interactions and analysis (11 papers), Semiconductor materials and devices (8 papers) and Thin-Film Transistor Technologies (5 papers). A.P. Webb is often cited by papers focused on Ion-surface interactions and analysis (11 papers), Semiconductor materials and devices (8 papers) and Thin-Film Transistor Technologies (5 papers). A.P. Webb collaborates with scholars based in United Kingdom, Switzerland and United States. A.P. Webb's co-authors include S. Vepřek, Zafar Iqbal, P. Capezzuto, Zafar Iqbal, Peter Townsend, H. Oswald, S. Vepřek, F.-A. Sarott, A.E. Hughés and C.W. Pitt and has published in prestigious journals such as Applied Physics Letters, Chemical Physics Letters and Applied Surface Science.

In The Last Decade

A.P. Webb

26 papers receiving 799 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A.P. Webb United Kingdom 12 640 598 201 126 123 26 837
Toshikazu Shimada Japan 18 577 0.9× 720 1.2× 47 0.2× 169 1.3× 110 0.9× 47 839
N. Maley United States 17 1.2k 1.9× 1.3k 2.3× 118 0.6× 123 1.0× 100 0.8× 54 1.5k
C. Clerc France 14 532 0.8× 533 0.9× 198 1.0× 208 1.7× 91 0.7× 52 860
J. Fontenille France 14 442 0.7× 464 0.8× 124 0.6× 161 1.3× 28 0.2× 32 697
W.T. Pawlewicz United States 12 286 0.4× 336 0.6× 101 0.5× 86 0.7× 74 0.6× 29 560
Elmar Ritter Liechtenstein 11 278 0.4× 368 0.6× 165 0.8× 110 0.9× 97 0.8× 15 663
W. Fukarek Germany 18 574 0.9× 402 0.7× 220 1.1× 67 0.5× 110 0.9× 44 866
L. Muehlhoff United States 8 326 0.5× 545 0.9× 59 0.3× 228 1.8× 64 0.5× 9 757
Nicole Herbots United States 16 240 0.4× 467 0.8× 258 1.3× 138 1.1× 55 0.4× 55 606
P. J. Gaczi United States 7 503 0.8× 268 0.4× 73 0.4× 84 0.7× 42 0.3× 9 578

Countries citing papers authored by A.P. Webb

Since Specialization
Citations

This map shows the geographic impact of A.P. Webb's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A.P. Webb with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A.P. Webb more than expected).

Fields of papers citing papers by A.P. Webb

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A.P. Webb. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A.P. Webb. The network helps show where A.P. Webb may publish in the future.

Co-authorship network of co-authors of A.P. Webb

This figure shows the co-authorship network connecting the top 25 collaborators of A.P. Webb. A scholar is included among the top collaborators of A.P. Webb based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A.P. Webb. A.P. Webb is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Webb, A.P., et al.. (1993). Effect of flow rate on reactive ion etching of GaAs in CH4/H2 plasma. Vacuum. 44(3-4). 263–265. 3 indexed citations
2.
Webb, A.P.. (1993). Process control for III–V semiconductor device fabrication using mass spectroscopy. Applied Surface Science. 63(1-4). 70–74. 1 indexed citations
3.
El-Hossary, F.M., D.J. Fabian, & A.P. Webb. (1990). Optical properties of amorphous carbon films formed by r.f. plasma deposition from methane. Thin Solid Films. 192(2). 201–209. 12 indexed citations
4.
Buus, J., Peter J. Williams, David J. Robbins, et al.. (1989). Surface-emitting two-dimensional coherent semiconductor laser array. Applied Physics Letters. 55(4). 331–333. 6 indexed citations
5.
Webb, A.P. & James A. Smith. (1988). Applications of in situ SIMS during processing of electronic materials. Surface and Interface Analysis. 12(5). 303–308. 4 indexed citations
6.
Williams, Peter J., et al.. (1986). Planar VPE infill 1.3 μm integrated laser/monitor photodiode with CARIBE etched facets. Electronics Letters. 22(9). 472–473. 10 indexed citations
7.
Webb, A.P., et al.. (1985). Charging shifts of core level peaks in X-ray photoelectron studies of argon-ion-bombarded carbon films on glass substrates. Thin Solid Films. 129(3-4). 281–287. 1 indexed citations
8.
Webb, A.P. & C.D.W. Wilkinson. (1984). Ion beam etching GaAs for integrated optical applications. Vacuum. 34(1-2). 159–162. 2 indexed citations
9.
Vepřek, S., et al.. (1981). Lattice dilatation of small silicon crystallites - implications for amorphous silicon. Solid State Communications. 39(3). 509–512. 50 indexed citations
10.
Webb, A.P., et al.. (1980). Further results on the erosion of carbon materials by hydrogen plasma. Journal of Nuclear Materials. 93-94. 634–639. 8 indexed citations
11.
Iqbal, Zafar, A.P. Webb, & S. Vepřek. (1980). Polycrystalline silicon films deposited in a glow discharge at temperatures below 250 °C. Applied Physics Letters. 36(2). 163–165. 78 indexed citations
12.
Webb, A.P. & S. Vepřek. (1979). Recativity of solid silicon with hydrogen under conditions of a low pressure plasma. Chemical Physics Letters. 62(1). 173–177. 68 indexed citations
13.
Vepřek, S., et al.. (1979). A note on the depth dependence and current density effects upon the radiation damage in graphite. Radiation Effects. 43(4-5). 133–138. 2 indexed citations
14.
Brunner, J., et al.. (1978). Influence of radiation damage on the diffraction of X-ray photoelectrons. Radiation Effects. 38(3-4). 191–195. 4 indexed citations
15.
Webb, A.P., et al.. (1978). A study, using a variety of techniques, of radiation-induced effects in different types of graphites irradiated with mev helium ions. Journal of Nuclear Materials. 76-77. 636–636. 1 indexed citations
16.
Vepřek, S., et al.. (1977). Effect of radiation damage on the erosion of graphite by atomic hydrogen. Journal of Nuclear Materials. 68(1). 32–38. 15 indexed citations
17.
Vepřek, S., et al.. (1977). Surface morphology changes of graphite irradiated with energetic helium ions. Radiation Effects. 34(4). 183–187. 12 indexed citations
18.
Webb, A.P. & Peter Townsend. (1976). Refractive index profiles induced by ion implantation into silica. Journal of Physics D Applied Physics. 9(9). 1343–1354. 62 indexed citations
19.
Webb, A.P., et al.. (1976). Changes in the chemical stability of ion-implanted silica glass. Radiation Effects. 30(3). 177–182. 47 indexed citations
20.
Webb, A.P., et al.. (1975). Dispersion measurements of optical waveguides. Journal of Physics D Applied Physics. 8(13). 1567–1574. 21 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Rankless by CCL
2026