E. Sakuma

1.5k total citations
37 papers, 1.2k citations indexed

About

E. Sakuma is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, E. Sakuma has authored 37 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Electrical and Electronic Engineering, 11 papers in Atomic and Molecular Physics, and Optics and 11 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in E. Sakuma's work include Silicon Carbide Semiconductor Technologies (27 papers), Semiconductor materials and devices (24 papers) and Copper Interconnects and Reliability (11 papers). E. Sakuma is often cited by papers focused on Silicon Carbide Semiconductor Technologies (27 papers), Semiconductor materials and devices (24 papers) and Copper Interconnects and Reliability (11 papers). E. Sakuma collaborates with scholars based in Poland, Japan and Netherlands. E. Sakuma's co-authors include S. Misawa, S. Yoshida, Hiroshi Daimon, Kazuhiko Endo, Hajime Okumura, S. Gonda, Katsuhiro Sasaki, M. Yamanaka, I. Nashiyama and Naohiro Hayakawa and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Materials Science.

In The Last Decade

E. Sakuma

37 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
E. Sakuma Poland	18	977	275	255	239	160	37	1.2k
Masakazu Katsuno Japan	20	1.1k 1.1×	291 1.1×	213 0.8×	228 1.0×	212 1.3×	85	1.2k
Mark J. Loboda United States	20	1.0k 1.0×	280 1.0×	269 1.1×	348 1.5×	120 0.8×	93	1.2k
Yu. M. Tairov Russia	13	847 0.9×	189 0.7×	155 0.6×	130 0.5×	281 1.8×	52	979
L. Muehlhoff United States	8	545 0.6×	326 1.2×	228 0.9×	111 0.5×	85 0.5×	9	757
Sandrine Juillaguet France	18	872 0.9×	312 1.1×	283 1.1×	318 1.3×	58 0.4×	121	1.1k
E. K. Broadbent United States	15	551 0.6×	166 0.6×	341 1.3×	224 0.9×	33 0.2×	30	761
B. T. McDermott United States	15	531 0.5×	329 1.2×	352 1.4×	140 0.6×	58 0.4×	35	985
Tamara Isaacs‐Smith United States	19	1.0k 1.1×	246 0.9×	305 1.2×	259 1.1×	72 0.5×	81	1.2k
Takeshi Mitani Japan	16	585 0.6×	250 0.9×	98 0.4×	156 0.7×	150 0.9×	65	774
J. M. Molarius Finland	14	458 0.5×	392 1.4×	130 0.5×	232 1.0×	42 0.3×	46	816

Countries citing papers authored by E. Sakuma

Since Specialization

Citations

This map shows the geographic impact of E. Sakuma's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Sakuma with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Sakuma more than expected).

Fields of papers citing papers by E. Sakuma

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Sakuma. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Sakuma. The network helps show where E. Sakuma may publish in the future.

Co-authorship network of co-authors of E. Sakuma

This figure shows the co-authorship network connecting the top 25 collaborators of E. Sakuma. A scholar is included among the top collaborators of E. Sakuma based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. Sakuma. E. Sakuma is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Hara, Shiro, T. Meguro, Y. Aoyagi, et al.. (1993). Microscopic mechanisms of accurate layer-by-layer growth of β-SiC. Thin Solid Films. 225(1-2). 240–243. 28 indexed citations

Yoshida, S., Hajime Okumura, S. Misawa, & E. Sakuma. (1992). Hetero-epitaxial growth of cubic GaN on GaAs by gas-source molecular beam epitaxy. Surface Science. 267(1-3). 50–53. 27 indexed citations

Hara, Shiro, et al.. (1992). Si desorption from a ß-SiC(001) surface by an oxygen flux. Surface Science Letters. 278(1-2). L141–L146. 2 indexed citations

Hara, Shiro, et al.. (1992). Self-limiting growth on the β-SiC(001) surface. Surface Science. 273(3). 437–441. 32 indexed citations

Itoh, Hisayoshi, Naohiro Hayakawa, I. Nashiyama, & E. Sakuma. (1989). Electron spin resonance in electron-irradiated 3C-SiC. Journal of Applied Physics. 66(9). 4529–4531. 104 indexed citations

Okumura, Hajime, Shin‐ichi Kuroda, Kazuhiko Endo, et al.. (1988). The Origin of Residual Carriers in CVD-Grown 3C-SiC. Japanese Journal of Applied Physics. 27(9R). 1712–1712. 11 indexed citations

Nashiyama, I., et al.. (1988). Deuteron channeling for defect analysis of silicon carbide. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 33(1-4). 599–602. 17 indexed citations

Yamanaka, Mitsugu, Hiroshi Daimon, E. Sakuma, et al.. (1988). Growth of High-Mobility 3C-SiC Epilayers by Chemical Vapor Deposition. Japanese Journal of Applied Physics. 27(3A). L434–L434. 40 indexed citations

Okumura, Hajime, Hiroshi Daimon, Mitsugu Yamanaka, et al.. (1988). Photoluminescence of Unintentionally Doped and N-Doped 3C-SiC Grown by Chemical Vapor Deposition. Japanese Journal of Applied Physics. 27(1A). L116–L116. 5 indexed citations

10.

Yamanaka, Mitsugu, Hiroshi Daimon, E. Sakuma, et al.. (1987). Temperature Dependence of Electrical Properties of Nitrogen-Doped 3C-SiC. Japanese Journal of Applied Physics. 26(5A). L533–L533. 17 indexed citations

11.

Yamanaka, M., Hiroshi Daimon, E. Sakuma, S. Misawa, & S. Yoshida. (1987). Temperature dependence of electrical properties of n- and p-type 3C-SiC. Journal of Applied Physics. 61(2). 599–603. 108 indexed citations

12.

Yoshida, S., Hiroshi Daimon, M. Yamanaka, et al.. (1986). Schottky-barrier field-effect transistors of 3C-SiC. Journal of Applied Physics. 60(8). 2989–2991. 32 indexed citations

13.

Daimon, Hiroshi, Mitsugu Yamanaka, E. Sakuma, S. Misawa, & Sadafumi Yoshida. (1986). Annealing Effects on Al and AN-Si Contacts with 3C–SiC. Japanese Journal of Applied Physics. 25(7A). L592–L592. 18 indexed citations

14.

Yoshida, S., Katsuhiro Sasaki, E. Sakuma, S. Misawa, & S. Gonda. (1985). Schottky barrier diodes on 3C-SiC. Applied Physics Letters. 46(8). 766–768. 88 indexed citations

15.

Yoshida, S., E. Sakuma, S. Misawa, & S. Gonda. (1984). A new doping method using metalorganics in chemical vapor deposition of 6H–SiC. Journal of Applied Physics. 55(1). 169–171. 11 indexed citations

16.

Kumashiro, Y., et al.. (1981). The preparation and characteristics of ZrC and TaC single crystals using an r.f. floating-zone process. Journal of Materials Science. 16(10). 2930–2933. 12 indexed citations

17.

Kumashiro, Y., E. Sakuma, Yoichi Kimura, Hideo Ihara, & S. Misawa. (1981). The preparation of single crystals of refractory carbides and nitrides. Journal of Crystal Growth. 52. 597–601. 16 indexed citations

18.

Kumashiro, Y., A. Itoh, E. Sakuma, & S. Misawa. (1981). An apparatus for RF plasma zone melting. Journal of Crystal Growth. 52. 495–497. 1 indexed citations

19.

Nakano, Kikuo, Y. Kumashiro, & E. Sakuma. (1979). Single-crystal growth of tantalum diboride. Journal of the Less Common Metals. 65(1). 27–34. 7 indexed citations

20.

Kumashiro, Y., Hiroshi Tokumoto, E. Sakuma, & A. Itoh. (1977). The elastic constants of TiC, Vc, and NbC single crystals.. 395–399. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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