A. Kamarou

634 total citations
17 papers, 551 citations indexed

About

A. Kamarou is a scholar working on Computational Mechanics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, A. Kamarou has authored 17 papers receiving a total of 551 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Computational Mechanics, 16 papers in Electrical and Electronic Engineering and 2 papers in Condensed Matter Physics. Recurrent topics in A. Kamarou's work include Ion-surface interactions and analysis (17 papers), Integrated Circuits and Semiconductor Failure Analysis (13 papers) and Silicon and Solar Cell Technologies (12 papers). A. Kamarou is often cited by papers focused on Ion-surface interactions and analysis (17 papers), Integrated Circuits and Semiconductor Failure Analysis (13 papers) and Silicon and Solar Cell Technologies (12 papers). A. Kamarou collaborates with scholars based in Germany, Belarus and Poland. A. Kamarou's co-authors include W. Wesch, E. Wendler, Markus Rettenmayr, Andreas Undisz, E. Alves, K. Gärtner, Ф. Ф. Комаров, S. Klaumünzer, П. И. Гайдук and O. V. Milchanin and has published in prestigious journals such as Journal of Applied Physics, Physical Review B and Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms.

In The Last Decade

A. Kamarou

17 papers receiving 536 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Kamarou Germany 12 396 395 241 95 57 17 551
J.F. Barbot France 18 631 1.6× 168 0.4× 355 1.5× 39 0.4× 111 1.9× 54 849
Yōichi Kamiura Japan 14 468 1.2× 140 0.4× 234 1.0× 48 0.5× 247 4.3× 84 590
A. H. Eltoukhy United States 12 284 0.7× 231 0.6× 258 1.1× 112 1.2× 116 2.0× 18 518
M. Sall France 11 166 0.4× 135 0.3× 180 0.7× 119 1.3× 148 2.6× 24 420
S. Leclerc France 10 274 0.7× 98 0.2× 174 0.7× 85 0.9× 23 0.4× 13 424
G. F. Doughty United Kingdom 6 260 0.7× 223 0.6× 166 0.7× 32 0.3× 81 1.4× 15 451
J. Auleytner Poland 8 186 0.5× 152 0.4× 131 0.5× 41 0.4× 78 1.4× 92 331
R.J. Schreutelkamp Netherlands 14 528 1.3× 260 0.7× 107 0.4× 13 0.1× 216 3.8× 40 593
E. Lugujjo United States 10 360 0.9× 117 0.3× 217 0.9× 39 0.4× 212 3.7× 15 539
R. V. Knoell United States 11 492 1.2× 208 0.5× 155 0.6× 18 0.2× 228 4.0× 21 600

Countries citing papers authored by A. Kamarou

Since Specialization
Citations

This map shows the geographic impact of A. Kamarou's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Kamarou with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Kamarou more than expected).

Fields of papers citing papers by A. Kamarou

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Kamarou. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Kamarou. The network helps show where A. Kamarou may publish in the future.

Co-authorship network of co-authors of A. Kamarou

This figure shows the co-authorship network connecting the top 25 collaborators of A. Kamarou. A scholar is included among the top collaborators of A. Kamarou based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Kamarou. A. Kamarou is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

17 of 17 papers shown
1.
Kamarou, A., W. Wesch, E. Wendler, Andreas Undisz, & Markus Rettenmayr. (2008). Radiation damage formation in InP, InSb, GaAs, GaP, Ge, and Si due to fast ions. Physical Review B. 78(5). 89 indexed citations
2.
Комаров, Ф. Ф., Л. А. Власукова, W. Wesch, et al.. (2008). Formation of InAs nanocrystals in Si by high-fluence ion implantation. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 266(16). 3557–3564. 29 indexed citations
3.
Wesch, W., A. Kamarou, E. Wendler, Andreas Undisz, & Markus Rettenmayr. (2007). Effect of high electronic excitation in swift heavy ion irradiated semiconductors. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 257(1-2). 283–286. 11 indexed citations
4.
Kamarou, A., W. Wesch, E. Wendler, Andreas Undisz, & Markus Rettenmayr. (2006). Swift heavy ion irradiation of InP: Thermal spike modeling of track formation. Physical Review B. 73(18). 94 indexed citations
5.
Kamarou, A., E. Wendler, & W. Wesch. (2005). Charge state effect on near-surface damage formation in swift heavy ion irradiated InP. Journal of Applied Physics. 97(12). 19 indexed citations
6.
Wesch, W., A. Kamarou, E. Wendler, & S. Klaumünzer. (2005). 593 MeV Au irradiation of InP, GaP, GaAs and AlAs. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 242(1-2). 363–366. 22 indexed citations
7.
Комаров, Ф. Ф., et al.. (2004). Redistribution of indium implanted in silicon due to thermal treatment and swift heavy ion irradiation. Vacuum. 75(2). 149–154. 3 indexed citations
8.
Kamarou, A., W. Wesch, E. Wendler, & S. Klaumünzer. (2004). Damage formation and annealing in InP due to swift heavy ions. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 225(1-2). 129–135. 20 indexed citations
9.
Wesch, W., A. Kamarou, & E. Wendler. (2004). Effect of high electronic energy deposition in semiconductors. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 225(1-2). 111–128. 122 indexed citations
10.
Комаров, Ф. Ф., et al.. (2003). Ion beam assisted deposition of metal layers using a novel one beam system. Vacuum. 70(2-3). 215–220. 5 indexed citations
11.
Wendler, E., W. Wesch, E. Alves, & A. Kamarou. (2003). Comparative study of radiation damage in GaN and InGaN by 400 keV Au implantation. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 218. 36–41. 25 indexed citations
12.
Комаров, Ф. Ф., et al.. (2003). Single-ion-beam experimental setup for combined implantation and deposition. Technical Physics. 48(5). 631–635. 2 indexed citations
13.
Wendler, E., A. Kamarou, E. Alves, K. Gärtner, & W. Wesch. (2003). Three-step amorphisation process in ion-implanted GaN at 15 K. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 206. 1028–1032. 65 indexed citations
14.
Wesch, W., A. Kamarou, E. Wendler, et al.. (2003). Ionisation stimulated defect annealing in GaAs and InP. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 206. 1018–1023. 14 indexed citations
15.
Kamarou, A., et al.. (2001). Gettering of metal impurities to cavities formed by hydrogen and helium implantation in silicon. Vacuum. 63(4). 609–612. 4 indexed citations
16.
Комаров, Ф. Ф., П. И. Гайдук, & A. Kamarou. (2001). Damage evolution and track formation in crystalline InP and GaAs during swift Kr and Xe ion irradiation. Vacuum. 63(4). 657–663. 17 indexed citations
17.
Комаров, Ф. Ф., et al.. (2001). Simulation of two-beam ion implantation in the multilayer and multicomponent targets. Vacuum. 63(4). 495–499. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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