A. J. Smith

452 total citations
19 papers, 370 citations indexed

About

A. J. Smith is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Mechanics. According to data from OpenAlex, A. J. Smith has authored 19 papers receiving a total of 370 indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Electrical and Electronic Engineering, 5 papers in Atomic and Molecular Physics, and Optics and 5 papers in Computational Mechanics. Recurrent topics in A. J. Smith's work include Silicon and Solar Cell Technologies (12 papers), Integrated Circuits and Semiconductor Failure Analysis (9 papers) and Semiconductor materials and devices (6 papers). A. J. Smith is often cited by papers focused on Silicon and Solar Cell Technologies (12 papers), Integrated Circuits and Semiconductor Failure Analysis (9 papers) and Semiconductor materials and devices (6 papers). A. J. Smith collaborates with scholars based in United Kingdom, United States and Belgium. A. J. Smith's co-authors include W. R. M. Graham, E. W. Plummer, B. Colombeau, Bartek Pawlak, N. E. B. Cowern, F. Cristiano, Olivier Richard, Bert Brijs, W. Vandervorst and Richard Lindsay and has published in prestigious journals such as Applied Physics Letters, Physical Review B and Optics Express.

In The Last Decade

A. J. Smith

17 papers receiving 349 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. J. Smith United Kingdom 8 216 156 67 61 59 19 370
Laurent Broch France 12 112 0.5× 76 0.5× 31 0.5× 19 0.3× 111 1.9× 35 379
Katsutoshi KIMURA Japan 14 388 1.8× 383 2.5× 21 0.3× 29 0.5× 219 3.7× 75 587
Martin Dubé Canada 8 96 0.4× 315 2.0× 33 0.5× 31 0.5× 106 1.8× 18 458
S. Araki Japan 16 143 0.7× 557 3.6× 30 0.4× 18 0.3× 159 2.7× 54 702
Martin Čermák Czechia 12 106 0.5× 35 0.2× 14 0.2× 110 1.8× 98 1.7× 32 299
Sophie Marbach France 12 83 0.4× 57 0.4× 25 0.4× 80 1.3× 107 1.8× 26 517
M. Toivonen Finland 13 366 1.7× 323 2.1× 50 0.7× 8 0.1× 25 0.4× 52 552
E. Barbier France 12 259 1.2× 284 1.8× 37 0.6× 11 0.2× 91 1.5× 30 463
Qi Jin China 11 309 1.4× 177 1.1× 44 0.7× 8 0.1× 66 1.1× 31 385

Countries citing papers authored by A. J. Smith

Since Specialization
Citations

This map shows the geographic impact of A. J. Smith's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. J. Smith with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. J. Smith more than expected).

Fields of papers citing papers by A. J. Smith

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. J. Smith. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. J. Smith. The network helps show where A. J. Smith may publish in the future.

Co-authorship network of co-authors of A. J. Smith

This figure shows the co-authorship network connecting the top 25 collaborators of A. J. Smith. A scholar is included among the top collaborators of A. J. Smith based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. J. Smith. A. J. Smith is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

19 of 19 papers shown
1.
Royall, B., S. Mazzucato, N. Balkan, et al.. (2013). GaAs n‐i‐p‐i solar cells with ion implanted selective contacts. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 10(4). 581–584.
2.
Boninelli, Simona, E. Napolitani, E. Bruno, et al.. (2011). Self-interstitials injection in crystalline Ge induced by GeO2nanoclusters. Physical Review B. 84(2). 11 indexed citations
3.
Reed, Graham T., Goran Z. Mashanovich, Frédéric Y. Gardes, et al.. (2009). Silicon photonics at the University of Surrey. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7366. 736602–736602. 1 indexed citations
4.
Wright, Nick, David J. Thomson, K. L. Litvinenko, et al.. (2008). Free carrier lifetime modification for silicon waveguide based devices. Optics Express. 16(24). 19779–19779. 28 indexed citations
5.
Whitehead, David, et al.. (2008). Monitoring laser cleaning of titanium alloys by probe beam reflection and emission spectroscopy. Applied Physics A. 93(1). 123–127. 20 indexed citations
6.
Smith, A. J., R.P. Webb, K.J. Kirkby, et al.. (2008). Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing. Applied Physics Letters. 92(8). 6 indexed citations
7.
Gwilliam, R., et al.. (2005). Electrical profiles of 20 nm junctions in Sb implanted silicon. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 242(1-2). 693–695. 2 indexed citations
8.
Smith, A. J., B. Colombeau, R. Gwilliam, et al.. (2005). Suppression of boron interstitial clusters in SOI using vacancy engineering. Materials Science and Engineering B. 124-125. 210–214. 7 indexed citations
9.
Cowern, N. E. B., A. J. Smith, B. Colombeau, et al.. (2005). Understanding, modeling and optimizing vacancy engineering for stable highly boron-doped ultrashallow junctions. View. 59. 4 pp.–971. 1 indexed citations
10.
Pawlak, Bartek, Wilfried Vandervorst, A. J. Smith, et al.. (2005). Enhanced boron activation in silicon by high ramp-up rate solid phase epitaxial regrowth. Applied Physics Letters. 86(10). 30 indexed citations
11.
Smith, A. J., B. Colombeau, Nick S. Bennett, et al.. (2005). Low Temperature B Activation in SOI Using Optimised Vacancy Engineering Implants. MRS Proceedings. 864. 2 indexed citations
12.
Colombeau, B., A. J. Smith, N. E. B. Cowern, et al.. (2004). Electrical deactivation and diffusion of boron in preamorphized ultrashallow junctions: interstitial transport and F co-implant control. 73. 971–974. 6 indexed citations
13.
Smith, A. J., B. Colombeau, R. Gwilliam, et al.. (2004). Doping and Mobility Profiles in Defect-Engineered Ultra-shallow Junctions: Bulk and SOI. MRS Proceedings. 810. 7 indexed citations
14.
Pawlak, Bartek, R. Surdeanu, B. Colombeau, et al.. (2004). Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions. Applied Physics Letters. 84(12). 2055–2057. 86 indexed citations
15.
Smith, A. J., W. R. M. Graham, & E. W. Plummer. (1991). Coverage measurements of the Si(100)2 × 1:Cs and Si(100)2 × 1:K surfaces: resolution of structural models. Surface Science. 243(1-3). L37–L40. 52 indexed citations
16.
Smith, A. J., W. R. M. Graham, & E. W. Plummer. (1991). Coverage measurements of the Si(100) 2× 1 : Cs and Si(100) 2× 1 : K surfaces: resolution of structural models. Surface Science Letters. 243(1-3). L37–L40. 4 indexed citations
17.
Heskett, D., T. Maeda Wong, A. J. Smith, et al.. (1989). Correlation of alkali metal-induced work function changes on semiconductor and metal surfaces. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 7(4). 915–918. 29 indexed citations
18.
Ponce, F. A., D. K. Biegelsen, J. C. Tramontana, & A. J. Smith. (1986). Defect Generation in the Initial Stages of Epitaxial Growth of GaAs on Silicon by MBE. Materials science forum. 10-12. 205–210. 1 indexed citations
19.
Smith, A. J.. (1982). Bryophyte Ecology. 77 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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