A. E. Staton-Bevan

666 citations

27 papers · 555 indexed · h-index 9

Impact in

General Materials Science top 1%
- Metallurgical and Alloy Processes
Mechanical Engineering top 10%
- Intermetallics and Advanced Alloy Properties
- High Temperature Alloys and Creep

Papers in

General Materials Science 2
Atomic and Molecular Physics, and Optics 17
- Semiconductor materials and interfaces 11
- Semiconductor Quantum Structures and Devices 9

Co-authors: Rees D. Rawlings R. D. Rawlings D. W. Pashley Robin L. Williams R. Droopad S.D. Parker Xiaolei Zhang P. Holdway
Journals: Applied Surface Science (2 papers)Journal of Applied Physics (2 papers)Journal of Materials Science (2 papers)Physica C Superconductivity (2 papers)Materials Science and Engineering B (2 papers)
Partner nations: United Kingdom United States Greece

In The Last Decade

A. E. Staton-Bevan

27 papers receiving 532 citations

Peers

Countries citing papers authored by A. E. Staton-Bevan

Since Specialization

Citations

This map shows the geographic impact of A. E. Staton-Bevan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. E. Staton-Bevan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. E. Staton-Bevan more than expected).

Fields of papers citing papers by A. E. Staton-Bevan

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. E. Staton-Bevan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. E. Staton-Bevan. The network helps show where A. E. Staton-Bevan may publish in the future.

Co-authorship network

The 25 scholars most cited alongside A. E. Staton-Bevan, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. E. Staton-Bevan Line = papers co-authored together A. E. Staton-Bevan links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	MECHANICAL AND OXIDATION PROPERTIES OF Ni₃Al-BASED ALLOYS Materials and Manufacturing Processes ·Δ. Τσιπάς, H. Lefakis, R. D. Rawlings, A. E. Staton-Bevan, S.A. Tsipas	2001	4
2	The Effect of Growth Temperature and Substrate Misorientation on Degree of Order and Antiphase Domain Size in Ga_0.52In_0.48P Epilayers Grown on GaAs (001) Substrates by Gs-Mbe MRS Proceedings ·Ming-i. Kao, A. E. Staton-Bevan, Stephen P. Najda, G. Duggan, A.H. Kean	1998	1
3	A SIMS and TEM investigation of Au/Ti/Pd solid state Ohmic contacts on p-GaAs Applied Surface Science ·Bernard M. Henry, A. E. Staton-Bevan, Vijay Kumar Sharma, C. Taillé	1997	4
4	Relaxation mechanisms in single InxGa1−xAs epilayers grown on misoriented GaAs(111¯)B substrates Journal of Applied Physics ·S. P. Edirisinghe, A. E. Staton-Bevan, 陈贤德	1997	8
5	Microstructural investigation of the growth of YBa2Cu3O7−x/Nd2CuO4/YBa2Cu3O7−x trilayered films on LaSrGaO4 substrates Physica C Superconductivity ·X J Liu, A. E. Staton-Bevan, Z. Trajanovic, Ichiro Takeuchi, T. Venkatesan	1996	3
6	HREM investigation of GdBa2Cu3O7−x films grown on MgO substrates by magnetron sputtering deposition Physica C Superconductivity ·X J Liu, A. E. Staton-Bevan, John A. Kilner	1996	4
7	Microstructural study of growth of a YBa₂Cu₃O_7−x/LaAlO₃/YBa₂Cu₃O_7−x trilayered film by pulsed laser deposition Journal of materials research/Pratt's guide to venture capital sources ·Fernanda Ribeiro Baptista Marques, A. E. Staton-Bevan, John A. Kilner, Z. Trajanovic, T. Venkatesan	1996	6
8	Electrical and microstructural investigation of Au/Pd/ri ohmic contacts for AIGaAs/GaAs heterojunction bipolar transistors Materials Science and Technology ·Kirandeep Sandhu, A. E. Staton-Bevan, C. Taillé	1995	3
9	Transmission electron microscopy study of In0.25Ga0.75As epilayers grown on GaAs (001) by molecular beam epitaxy: The effect of epilayer thickness Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·S. P. Edirisinghe, A. E. Staton-Bevan, Rustem Shakmuratov, B.A. Joyce	1995	5
10	Vacancy Promoted Interdiffusion in Quantum Wells and Applications to Optoelectronic Devices MRS Proceedings ·M. Ghisoni, A. Rivers, Maciej Krawczyk, G. Parry, Xinwei Zhang, A. E. Staton-Bevan, M.A. Pate, G. Hill, Chris Button, J.S. Roberts	1992	5
11	An initial investigation of the microstructure of Ti/Pd/Au ohmic contact structures for gaas microwave devices applications Journal of Electronic Materials ·Bernard M. Henry, A. E. Staton-Bevan, Vijay Kumar Sharma, C. Taillé, C. Aude-Hansen	1992	4
12	GaAs multiple quantum well microresonator modulators grown on silicon substrates Optical and Quantum Electronics ·P. Barnes, K. Woodbridge, Christine Cardinal Roberts, Christoph Dubiel, A. Rivers, M. Whitehead, G. Parry, Xinwei Zhang, A. E. Staton-Bevan, J.S. Roberts, Chris Button	1992	5
13	A Microstructual Analysis of Au/Pd/Ti Ohmic Contacts for GaAs-Based Heterojunction Bipolar Transistors (HJBTs) MRS Proceedings ·Bernard M. Henry, A. E. Staton-Bevan, Vijay Kumar Sharma, C. Taillé, Aurelio Miró Quesada S.	1991	1
14	A transmission electron microscopy study of optically annealed ohmic contacts to GaAs using a Zirconium Diboride diffusion barrier Materials Science and Engineering B ·Mike Grimshaw, A. E. Staton-Bevan	1989	6
15	Observation and control of the amphoteric behaviour of Si-doped InSb grown on GaAs by MBE Semiconductor Science and Technology ·S.D. Parker, Robin L. Williams, R. Droopad, R. A. Stradling, K.W.J. Barnham, S. N. Holmes, A Dunner, Chris C. Phillips, E. Skuras, Lim Shey Thing, Xiaolei Zhang, A. E. Staton-Bevan, D. W. Pashley	1989	69
16	A Tem Study of Optically Annealed Ohmic Contacts to GaAs Using a Zirconium Diboride Diffusion Barrier MRS Proceedings ·Mike Grimshaw, A. E. Staton-Bevan	1988	1
17	Dislocation structures in Zr3Al-based alloys Journal of Materials Science ·P. Holdway, A. E. Staton-Bevan	1986	12
18	The orientation and temperature dependence of the 0.2% proof stress of single crystal Ni3 (Al, Ti) Scripta Metallurgica ·A. E. Staton-Bevan	1983	15
19	The orientation and temperature dependence of the work-hardening rate of single crystal Ni₃(Al₃, Ti) Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties ·A. E. Staton-Bevan	1983	33
20	Dislocation structures in deformed single-crystal Ni₃(Al, Ti) Philosophical magazine ·A. E. Staton-Bevan, Rees D. Rawlings	1975	64

About A. E. Staton-Bevan

A. E. Staton-Bevan is a scholar working on General Materials Science, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Condensed Matter Physics and Mechanical Engineering, having authored 27 papers that have together received 555 indexed citations. Recurring topics across this work include Semiconductor materials and interfaces (11 papers), Semiconductor materials and devices (10 papers), Semiconductor Quantum Structures and Devices (9 papers), Intermetallics and Advanced Alloy Properties (5 papers), Ion-surface interactions and analysis (3 papers), Molecular Junctions and Nanostructures (3 papers), Metal and Thin Film Mechanics (3 papers) and Physics of Superconductivity and Magnetism (3 papers). The work is most often cited by research in General Materials Science (73 citations), Mechanical Engineering (335 citations), Atomic and Molecular Physics, and Optics (191 citations), Materials Chemistry (215 citations) and Biomedical Engineering (141 citations). A. E. Staton-Bevan has collaborated with scholars based in United Kingdom, United States and Greece. Frequent co-authors include Rees D. Rawlings, R. D. Rawlings, D. W. Pashley, Robin L. Williams, R. Droopad, S.D. Parker, Xiaolei Zhang, P. Holdway, Xinwei Zhang and K.W.J. Barnham. Their work appears in journals such as Applied Surface Science, Journal of Applied Physics, Journal of Materials Science, Physica C Superconductivity and Materials Science and Engineering B.

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